MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE CM200TU-12F ¡IC ................................................................... 200A ¡VCES ............................................................ 600V ¡Insulated Type ¡6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 90 ±0.25 23 12 4–φ5.5 MOUNTING HOLES CM G E 12 11 G E V 12 23 21.7 GuN EuN GvN EvN GwN EwN E G E W 23 11 12 21.7 11 Tc measured point 8.1 7.1 +1 29 –0.5 0.8 4 LABEL 0.5 G 48.5 11 14.4 21.7 E 3.75 G U 5–M5NUTS Tc measured point 2.8 11 21.7 E 26 80 ±0.25 102 11 G 17 P N GuP EuP GvP EvP GwP EwP (4) 3.75 12 P GUP GVP RTC EUP U GUN RTC EUN GWP RTC EVP V GVN RTC EVN RTC EWP W GWN RTC EWN N CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 600 ±20 200 400 200 400 590 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680 (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Unit V V A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Parameter Symbol Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 5 6 7 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — 3.1 — 1.6 1.6 — — — 1240 — — — — — 3.8 — — — 0.09 — — 20 2.2 — 54 3.6 2.0 — 120 100 350 250 150 — 2.6 0.21 0.35 — 0.15*3 µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Tj = 25°C Tj = 125°C IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = ±15V RG = 3.1Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to heat sink, Thermal compound applied*2 (1/6 module) Case temperature measured point is just under the chips 31 mA V nF nC ns ns µC V K/W Ω Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 15 11 10 Tj=25°C 350 VGE=20V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) 400 9.5 300 9 250 200 8.5 150 100 8 50 7.5 0 0.5 1 1.5 2 2.5 3 3.5 2.5 2 1.5 1 Tj = 25°C Tj = 125°C 0.5 0 0 100 200 300 400 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 5 Tj = 25°C 7 5 4 3 IC = 400A 2 IC = 200A 1 0 IC = 80A 6 8 10 12 14 16 18 102 7 5 3 2 101 7 5 3 2 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Cies SWITCHING TIMES (ns) 3 2 101 7 5 3 2 Coes 100 7 5 3 2 Tj = 25°C 3 2 100 20 102 CAPACITANCE Cies, Coes, Cres (nF) VGE = 15V 4 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 0 3 Cres 7 5 3 2 102 7 5 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 tf td(on) 3 2 101 7 5 3 2 VGE = 0V td(off) tr Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 102 7 5 trr NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) Irr 3 2 101 7 5 Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 25°C 3 2 100 1 10 2 5 7 102 3 2 3 5 7 103 EMITTER CURRENT IE (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.21K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.35K/W 100 7 5 3 2 3 2 10–1 10–1 10–2 10–2 7 5 3 2 7 5 3 2 10–3 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 18 IC = 200A VCC = 200V 16 14 VCC = 300V 12 10 8 6 4 2 0 0 200 600 1000 1400 1800 GATE CHARGE QG (nC) Feb. 2009 4