MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE CM300DU-24H ● IC ................................................................... 300A ● VCES ....................................................... 1200V ● Insulated Type ● 2-elements in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point E2 G2 C1 G1 E1 6 15 6 E2 C2E1 80 E2 G2 G1 E1 CM (18.5) (8.25) C2E1 E2 18.25 CIRCUIT DIAGRAM C1 4-φ6.5 MOUTING HOLES 25 3-M6 NUTS 25 93 7 2.5 18 14 7 0.5 0.5 4 18 14 2.8 LABEL 0.5 0.5 4 21 29 +1.0 –0.5 7.5 18 14 21.5 ±0.25 8.5 62 ±0.25 110 Feb. 2009 1 MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso (Tj = 25°C, unless otherwise specified) Item Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage Note 1. 2. 3. 4. 5. 6. (Note 1) Ratings Unit 1200 ±20 300 600 300 600 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 V V A A A A W °C °C Vrms N·m N·m g (Tj = 25°C, unless otherwise specified) Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Contact thermal resistance (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value VCE = VCES, VGE = 0V Min — Limits Typ — Max 1 IC = 30mA, VCE = 10V 4.5 6 7.5 V — — — — — — — — — — — — — — — — — 2.9 2.85 — — — 1125 — — — — — — 1.65 — — 0.5 3.7 — 45 15 9 — 200 300 350 350 3.2 300 — 0.11 0.18 µA nF nF nF nC ns ns ns ns V ns µC K/W K/W — 0.02 — K/W Item ICES Rth(c-f) VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Test Conditions ±VGE = VGES, VCE = 0V IC = 300A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 300A, VGE = 15V VCC = 600V, IC = 300A VGE = ±15V RG = 1.0Ω Resistive load IE = 300A, VGE = 0V IE = 300A, die / dt = –600A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) Unit mA V Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 600 15 VCE = 10V COLLECTOR CURRENT IC (A) 12 500 Tj = 25°C 11 400 300 10 200 9 100 8 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 20 (V) 0 2 4 6 8 400 300 200 100 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 100 0 200 300 400 500 8 6 IC = 600A 4 IC = 300A IC = 120A 2 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 102 Tj = 25°C 3 2 102 7 5 3 2 101 1.0 Tj = 25°C COLLECTOR CURRENT IC (A) CAPACITANCE Cies, Coes, Cres (nF) 7 5 10 0 600 103 EMITTER CURRENT IE (A) 500 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) 600 7 5 3 2 VGE = 0V Cies 101 7 5 3 2 100 Coes Cres 7 5 3 2 3.5 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 1.5 2.0 2.5 3.0 Feb. 2009 3 MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE tf td(off) td(on) 3 2 tr 102 7 5 Tj = 125°C VCC = 600V VGE = ±15V RG = 1.0Ω 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 101 1 10 2 3 5 7 102 2 3 2 3 3 Irr 2 2 trr 102 101 7 5 7 5 3 3 2 2 2 3 5 7 102 100 2 3 5 7 103 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C Per W Perunit unitbase base==RRth(j th(j––c)c)==0.14°C/ 0.11K/W 100 5 5 101 1 10 5 7 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (ns) 7 5 REVERSE RECOVERY TIME trr (ns) 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 – di /dt = 600A /µs 7 7 Tj = 25°C 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 100 Per W Perunit unitbase base==RRth(j th(j––c)c)==0.24°C/ 0.18K/W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 300A VCC = 400V 15 VCC = 600V 10 5 0 0 400 800 1200 1600 GATE CHARGE QG (nC) Feb. 2009 4