MITSUBISHI IGBT MODULES CM400DU-24NFH HIGH POWER SWITCHING USE CM400DU-24NFH ¡IC ................................................................... 400A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 110 (8.5) (8.5) 14 3-M6 NUTS 14 25 7 E2 G2 17.5 G1 E1 CIRCUIT DIAGRAM (9) 18.25 C1 14 25 18 7 21.5 18 TAB #110. t = 0.5 LABEL 21.2 29 +1.0 –0.5 8.5 18 C1 E2 80 15 4-φ6.5 MOUTING HOLES E2 C2E1 6 G1 E1 9.25(10) (22.2) C2E1 62 ±0.25 6 E2 G2 (9) 93 ±0.25 Feb. 2009 MITSUBISHI IGBT MODULES CM400DU-24NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — (Tj = 25°C, unless otherwise specified) Parameter Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Ratings 1200 ±20 400 800 400 800 1040 2450 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 (Note 2) (Note 2) (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Unit V V A A A A W W °C °C Vrms N•m N•m g (Tj = 25°C, unless otherwise specified) Test conditions Parameter Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 40mA, VCE = 10V 4.5 6 7.5 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — — 0.78 — 5.0 5.0 — — — 1800 — — — — — 16 — — — 0.02 — — — 1.4 6.5 — 63 5.3 1.2 — 300 100 500 150 250 — 3.5 0.12 0.23 — µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance*4 Tj = 25°C Tj = 125°C IC = 400A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE = ±15V RG = 0.78Ω, Inductive load IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) External gate resistance mA V nF nF nF nC ns ns ns ns ns 0.051*3 0.093*3 7.8 µC V K/W K/W K/W K/W K/W Ω *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC’) measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Feb. 2009 2 MITSUBISHI IGBT MODULES CM400DU-24NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 800 14 VCE = 10V 13 COLLECTOR CURRENT IC (A) VGE=20 (V) 700 15 12 600 500 11 400 300 10 200 9 100 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) Tj = 25°C 8 0 2 4 6 8 600 500 400 300 200 100 Tj = 25°C Tj = 125°C 0 5 10 15 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 9 VGE = 15V 8 Tj = 25°C Tj = 125°C 7 6 5 4 3 2 1 0 0 Tj = 25°C IC = 800A 8 6 IC = 400A 4 IC = 160A 2 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Cies, Coes, Cres (nF) 7 5 Tj = 125°C Tj = 25°C 3 2 102 7 5 3 2 101 10 0 100 200 300 400 500 600 700 800 103 EMITTER CURRENT IE (A) 700 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) 800 0 1 2 3 4 5 7 5 3 2 102 7 5 3 2 Cies 101 7 5 3 2 100 7 5 3 2 Coes Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM400DU-24NFH HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) 7 5 REVERSE RECOVERY TIME trr (ns) 103 td(off) 3 2 td(on) tf 102 7 5 3 2 tr 101 7 5 3 2 100 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive load 2 3 5 7 103 5 5 Irr 3 2 trr 102 7 5 7 3 2 2 3 5 7 102 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) Single Pulse TC = 25°C 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 7 5 3 Per unit base = 2 7 5 3 2 Rth(j–c) = 0.12K/W 10–3 102 Conditions: 5 VCC = 600V VGE = ±15V 3 RG = 0.78Ω 2 Tj = 25°C Inductive load 101 2 3 5 7 103 COLLECTOR CURRENT IC (A) 7 5 3 2 3 2 101 1 10 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 Tj = 25°C 7 7 REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE 7 5 3 2 Single Pulse TC = 25°C 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 7 5 3 Per unit base = 2 Rth(j–c) = 0.23K/W 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 400A VCC = 400V 15 VCC = 600V 10 5 0 0 500 1000 1500 2000 2500 GATE CHARGE QG (nC) Feb. 2009 4