MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE CM50TU-34KA ● IC ..................................................................... 50A ● VCES .......................................................... 1700V ● Insulated Type ● 6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 90 ±0.25 23 12 4–φ5.5 MOUNTING HOLES CM G E U 12 5–M5NUTS Tc measured point 2.8 E 11 G G E V 12 23 21.7 GuN EuN GvN EvN GwN EwN E G E W 23 11 12 21.7 0.5 G 48.5 E 11 14.4 21.7 3.75 G 21.7 +1 29 –0.5 0.8 11 Tc measured point 8.1 7.1 4 LABEL P 26 102 80 ±0.25 GuP EuP GvP EvP GwP EwP 11 17 P N 11 (4) 3.75 12 GUP EUP GVP EVP U V GUN EUN GVN EVN GWP EWP W GWN EWN N CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 1700 ±20 50 100 50 100 600 –40 ~ +150 –40 ~ +125 3500 2.5 ~ 3.5 2.5 ~ 3.5 680 (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Unit V V A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 5mA, VCE = 10V 4 5.5 7 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — — — 3.2 3.8 — — — 225 — — — — — 3.9 — 2.2 — — 0.09 — 0.5 4.0 — 7.0 1.2 0.38 — 100 100 400 800 200 — 4.6 — 0.21 0.47 — 0.17*3 µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge VEC(Note 1) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Thermal resistance*1 Contact thermal resistance Thermal resistance Tj = 25°C Tj = 125°C IC = 50A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 50A, VGE = 15V VCC = 1000V, IC = 50A VGE = ±15V RG = 6.3Ω, Inductive load IE = 50A IE = 50A, VGE = 0V, Tj = 25°C IE = 50A, VGE = 0V, Tj = 125°C IGBT part (1/6 module) FWDi part (1/6 module) Case to heat sink, Thermal compound applied*2 (1/6 module) Case temperature measured point is just under the chips mA V nF nC ns ns µC V V K/W Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 100 12 15 14 COLLECTOR CURRENT (A) VGE = 20V 80 10 60 40 9 20 8 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 100 11 0 2 4 6 8 60 40 20 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 VGE = 15V Tj = 25°C 5 Tj = 125°C 4 3 2 1 0 0 20 40 60 80 100 Tj = 25°C 8 6 IC = 100A 4 IC = 50A 2 0 IC = 20A 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 20 101 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C 7 5 3 2 102 7 5 3 2 101 10 COLLECTOR CURRENT IC (A) 103 EMITTER CURRENT IE (A) VCE = 10V Tj = 25°C 80 Tj = 125°C 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) Tj = 25°C 1 2 3 4 7 5 Cies 3 2 100 7 5 Coes 3 2 10–1 Cres 7 5 3 2 VGE = 0V 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 5 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) 104 7 5 3 2 103 tf 7 5 3 2 td(off) 102 7 5 3 Conditions: 2 VCC = 1000V td(on) tr 101 VGE = ±15V 7 5 RG = 6.3Ω 3 Tj = 125°C 2 Inductive load 100 0 10 2 3 5 7 101 2 3 5 7 102 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 Conditions: 5 VCC = 1000V VGE = ±15V 3 RG = 6.3Ω 2 Tj = 25°C Inductive load Irr 2 10 trr 7 5 3 2 101 0 10 COLLECTOR CURRENT IC (A) 2 3 10–3 GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) 10–1 7 5 3 2 10–2 10–2 7 5 3 2 20 3 2 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 5 7 102 3 GATE CHARGE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.21K/ W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.47K/ W 100 10–1 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 7 5 3 2 5 7 101 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 IC = 50A 16 12 VCC = 1000V 8 4 0 TIME (s) VCC = 800V 0 50 100 150 200 250 300 GATE CHARGE QG (nC) Feb. 2009 4