MITSUBISHI IGBT MODULES CM600HU-24H HIGH POWER SWITCHING USE INSULATED TYPE CM600HU-24H ● IC ................................................................... 600A ● VCES ....................................................... 1200V ● Insulated Type ● 1-element in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM 110 93 ±0.25 23.6 C 62 ±0.25 80 E 10.7 E 6.5 G 2–M8NUTS 21.5 26.8 29 10.7 9.5 24.5 15.4 13.5 6.5 17.5 14.5 5.5 2–M4NUTS Dimensions in mm CM 18 4–φ6.5MOUNTING HOLES 4 +1 34 -0.5 26 +1 -0.5 TC measured point LABEL E C E G CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM600HU-24H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso (Tj = 25°C, unless otherwise specified) Item Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage Note 1. 2. 3. 4. 5. 6. (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw Auxiliary terminals M4 screw Typical value Ratings Unit 1200 ±20 600 1200 600 1200 3100 –40 ~ +150 –40 ~ +125 2500 9.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 600 V V A A A A W °C °C Vrms N·m N·m N·m g (Tj = 25°C, unless otherwise specified) VCE = VCES, VGE = 0V Min — Limits Typ — Max 2 IC = 60mA, VCE = 10V 4.5 6 7.5 V — — — — — — — — — — — — — — — — — — 2.9 2.85 — — — 2250 — — — — — — 3.3 — — 0.015 0.5 3.7 — 90 31.5 18 — 300 700 450 350 3.2 300 — 0.04 0.06 — µA Item Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance ICES VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Test Conditions ±VGE = VGES, VCE = 0V IC = 600A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE = ±15V RG = 2.1Ω Resistive load IE = 600A, VGE = 0V IE = 600A, die / dt = –1200A / µs Junction to case, IGBT part Junction to case, FWDi part Case to heat sink, conductive grease applied (Note 6) Unit mA V nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM600HU-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 12 15 800 11 600 10 400 9 200 8 0 0 2 4 6 8 800 600 400 200 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 5 0 200 400 600 800 8 IC = 1200A 6 IC = 600A 4 2 IC = 240A 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 102 Tj = 25°C 103 7 5 3 2 102 1.0 Tj = 25°C COLLECTOR CURRENT IC (A) 2 7 5 10 0 1000 1200 3 EMITTER CURRENT IE (A) VCE = 10V 1000 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1200 VGE = 20 (V) 1000 Tj = 25°C CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) 1200 1.5 2.0 2.5 3.0 7 5 2 101 7 5 Coes 3 2 100 3.5 Cies 3 VGE = 0V Cres 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM600HU-24H HIGH POWER SWITCHING USE INSULATED TYPE tf td(off) 3 td(on) tr 2 102 7 5 VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 101 5 7 102 3 2 3 5 7 103 2 2 5 3 3 2 2 trr 102 101 7 5 7 5 3 3 2 2 2 3 5 7 102 100 2 3 5 7 103 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C Per unit base = Rth(j – c) = 0.04K/W 100 5 101 1 10 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (ns) 7 5 REVERSE RECOVERY TIME trr (ns) 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 –di/dt = 1200A/µs 7 7 Tj = 25°C lrr 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 100 Per unit base = Rth(j – c) = 0.06K/W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 600A VCC = 400V 15 VCC = 600V 10 5 0 0 800 1600 2400 3200 GATE CHARGE QG (nC) Feb. 2009 4