MITSUBISHI <INTELLIGENT POWER MODULES> PM100CS1D120 FLAT-BASE TYPE INSULATED PACKAGE PM100CS1D120 FEATURE Inverter + Drive & Protection IC • 3 phase 100A/1200V CSTBTTM (The Current senser and the thermal senser with a build-in CSTBTTM.) • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 120 10.6 2-2.54 2-2.54 10.16 10.16 6.5 10.16 5-2.54 8.5 23.79 2-2.54 106 ±0.3 7 4 7 10 2-φ5.5 MOUNTING HOLES 15 U N P (10) 25 V 16.5 9 5.57 W 50 67.4 39 19 19 5-M4 NUT 19 Terminal code L A B E L 31.5 +– 10.5 11.6 19 30 15 28 2.5 50 16.5 1 1. VWPC 2. WP 3. VWP1 4. VVPC 5. VP 6. VVP1 7. VUPC 8. UP 9. VUP1 10. VNC 11. 12. 13. 14. 15. VN1 WN VN UN Fo May 2009 1 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CS1D120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo = 1.5kΩ VNC WN Fo VN1 VN Fo Vcc Gnd In UN WP VWPC VWP1 VP Gnd In Vcc UP VVP1 VVPC VUP1 VUPC Rfo Gnd In Gnd Si Out OT Gnd Fo Vcc Si Out OT Gnd In Gnd Fo Vcc Si Out OT N Gnd Si Out Gnd In OT W Gnd V Vcc Si Out OT Gnd In Gnd Vcc Si Out U OT P MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCES ±IC ±ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C (Note-1) (Note-1) Ratings 1200 100 200 694 –20 ~ +150 Unit V A A W °C Ratings Unit 20 V 20 V 20 20 V mA *: Tc measurement point is just under the chip. CONTROL PART Symbol Parameter VD Supply Voltage VCIN Input Voltage VFO IFO Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Applied between : FO-VNC Sink current at FO terminals May 2009 2 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CS1D120 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso Symbol Ratings Condition VD = 13.5 ~ 16.5V Inverter Part, Tj = +125°C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Unit 800 V 1000 –40 ~ +125 2500 V °C Vrms THERMAL RESISTANCES Symbol Condition Parameter Rth(j-c)Q Rth(j-c)F Junction to case Thermal Resistances Rth(c-f) Contact Thermal Resistance Inverter IGBT part (per 1 element) Inverter FWDi part (per 1 element) Case to fin, (per 1 module) Thermal grease applied (Note-1) (Note-1) (Note-1) (Note-1) Tc (under the chip) measurement point is below. arm axis X Y UP IGBT FWDi 21.4 21.4 –4.6 5.3 VP IGBT FWDi 65.0 65.0 –4.6 5.3 Min. — — Limits Typ. — — Max. 0.18 0.27 — — 0.046 Limits Typ. 1.65 1.85 2.50 0.65 0.20 0.35 1.10 0.35 — — Max. 2.15 2.35 3.50 2.0 0.8 1.0 2.8 1.2 1 10 Unit °C/W (unit : mm) WP IGBT FWDi 90.0 90.0 –4.6 5.3 UN IGBT FWDi 36.0 36.0 –0.7 –10.6 VN IGBT FWDi 51.0 51.0 –0.7 –10.6 WN IGBT FWDi 76.0 76.0 –0.7 –10.6 Bottom view Y X P N U V W ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Condition Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage VD = 15V, IC = 100A VCIN = 0V, Pulsed (Fig. 1) –IC = 100A, VD = 15V, VCIN = 15V Switching Time VD = 15V, VCIN = 0V↔15V VCC = 600V, IC = 100A Tj = 125°C Inductive Load Collector-Emitter Cutoff Current VCE = VCES, VD = 15V Tj = 25°C Tj = 125°C (Fig. 2) (Fig. 3,4) (Fig. 5) Tj = 25°C Tj = 125°C Min. — — — 0.3 — — — — — — Unit V V µs mA May 2009 3 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CS1D120 FLAT-BASE TYPE INSULATED PACKAGE CONTROL PART Symbol Parameter Condition VN1-VNC V*P1-V*PC ID Circuit Current VD = 15V, VCIN = 15V Vth(ON) Vth(OFF) SC Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC (Fig. 3,6) –20 ≤ Tj ≤ 125°C, VD = 15V Over Temperature Protection Detect Temperature of IGBT chip Supply Circuit Under-Voltage Protection –20 ≤ Tj ≤ 125°C Fault Output Current VD = 15V, VCIN = 15V (Note-2) Minimum Fault Output Pulse Width VD = 15V (Note-2) toff(SC) OT OT(hys) UV UVr IFO(H) IFO(L) tFO (Note-2) Fault Fault Fault Fault output output output output VD = 15V (Fig. 3,6) Trip level Hysteresis Trip level Reset level Min. — — 1.2 1.7 150 Limits Typ. 6 2 1.5 2.0 — Max. 12 4 1.8 2.3 — — 1.0 — µs 135 — 11.5 — — — — 20 12.0 12.5 — 10 — — 12.5 — 0.01 15 °C 1.0 1.8 — Min. 2.5 1.5 — Limits Typ. 3.0 1.7 400 Max. 3.5 2.0 — Unit mA V A V mA ms is given only when the internal SC, OT & UV protection. of SC, OT & UV protection operate by lower arms. of SC protection given pulse. of OT, UV protection given pulse while over trip level. MECHANICAL RATINGS AND CHARACTERISTICS Condition Parameter Symbol — Mounting torque — Weight Mounting part Main terminal part screw : M5 screw : M4 — Unit N•m g RECOMMENDED CONDITIONS FOR USE Symbol VCC Parameter Supply Voltage VD Control Supply Voltage VCIN(ON) VCIN(OFF) fPWM Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time tdead Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Using Application Circuit of Fig. 8 For IPM’s each input signals Recommended value ≤ 800 Unit V 15.0 ± 1.5 V (Fig. 7) ≤ 0.8 ≥ 9.0 ≤ 20 kHz ≥ 2.5 µs V (Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak ≤ ± 5V/µs ≤ 2V 15V GND May 2009 4 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CS1D120 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W,B) IN Fo VCIN P, (U,V,W,B) Ic V IN Fo VCIN –Ic V (15V) (0V) U,V,(N) VD (all) U,V,W,B, (N) VD (all) Fig. 1 VCE(sat) Test Fig. 2 VEC, (VFM) Test a) Lower Arm Switching P VCIN (15V) trr Signal input (Upper Arm) CS Ic Irr Vcc Fo Signal input (Lower Arm) VCIN VCE U,V 90% 90% N VD (all) b) Upper Arm Switching Ic 10% Signal input (Upper Arm) VCIN 10% 10% tc(off) VCIN U,V CS VCIN (15V) 10% tc(on) P Vcc td(on) tr tf td(off) Fo Signal input (Lower Arm) (ton = td(on) + tr) (toff = td(off) + tf) N Ic VD (all) Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform VCIN Short Circuit Current P, (U,V,W,B) A VCIN (15V) Constant Current IN Fo SC Trip Pulse VCE Ic VD (all) U,V,W,B, (N) Fo toff(SC) Fig. 5 ICES Test Fig. 6 SC test waveform IPM’ input signal VCIN (Upper Arm) 0V 2V 1.5V 0V IPM’ input signal VCIN (Lower Arm) 2V 1.5V 1.5V tdead 2V tdead t t tdead 1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value Fig. 7 Dead time measurement point example May 2009 5 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CS1D120 FLAT-BASE TYPE INSULATED PACKAGE P 20kΩ ≥10µ VUP1 VD IF OT OUT Vcc → + – Si UP In VUPC U GND GND ≥0.1µ VVP1 VD Si VP In VVPC V GND GND VWP1 VD OT OUT Vcc OT OUT Vcc Si WP In VWPC W GND GND 20kΩ → OT OUT Vcc ≥10µ Fo IF UN Si In GND GND ≥0.1µ N OT 20kΩ → M Vcc ≥10µ IF OUT Si Fo VN In GND GND ≥0.1µ 20kΩ → VD IF 1kΩ OUT Si Fo In GND GND VNC Fo OT Vcc WN ≥0.1µ 5V VN1 ≥10µ Rfo : Interface which is the same as U-phase Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. • • • • • • • May 2009 6 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CS1D120 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 13V 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 2.0 1.5 1.0 0.5 Tj = 25°C Tj = 125°C 0 2.5 VD = 15V 0 50 100 150 200 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR RECOVERY CURRENT –IC (A) COLLECTOR-EMITTER VOLTAGE VCE(sat) (V) 2.4 2.2 2.0 1.8 1.6 1.4 IC = 100A Tj = 25°C Tj = 125°C 1.2 1.0 12 SWITCHING TIME ton, toff (µs) 15V VD = 17V 140 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) Tj = 25°C 13 14 15 16 17 18 103 VD = 15V 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 Tj = 25°C Tj = 125°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 CONTROL POWER SUPPLY VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V) SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) 101 VCC = 600V 7 VD = 15V 5 Tj = 25°C 4 Tj = 125°C 3 Inductive load 2 toff SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) 101 VCC = 600V 7 VD = 15V 5 Tj = 25°C 4 Tj = 125°C 3 Inductive load SWITCHING TIME tc(on), tc(off) (µs) COLLECTOR CURRENT IC (A) 160 100 7 5 4 3 ton 2 10–1 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 2 100 7 5 4 3 2 tc(off) tc(on) 10–1 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) May 2009 7 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CS1D120 DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 1.0 50 VCC = 600V Tj = 25°C 0.9 VD = 15V Tj = 125°C 45 Inductive load 0.8 40 0.7 35 0.6 30 Irr 0.5 25 0.4 20 0.3 15 10 0.2 trr 0.1 0 20 0 40 60 80 100 5 0 120 COLLECTOR RECOVERY CURRENT –IC (A) SWITCHING RECOVERY LOSS CHARACTERISTICS (TYPICAL) 8.0 VCC = 600V 7.0 VD = 15V Tj = 25°C 6.0 Tj = 125°C Inductive load 5.0 ID VS. fc CHARACTERISTICS (TYPICAL) 70.0 VD = 15V Tj = 25°C Tj = 125°C 60.0 N-side ID (mA) 50.0 4.0 40.0 30.0 3.0 10.0 1.0 0 P-side 20.0 2.0 0 20 40 60 80 100 0 120 0 5 10 15 20 25 COLLECTOR RECOVERY CURRENT –IC (A) fc (kHz) UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 20 UVt 18 UVr 16 SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 2.0 VD = 15V 1.8 14 1.4 12 1.2 1.6 SC SWITCHING LOSS Err (mJ/pulse) COLLECTOR CURRENT IC (A) UVt /UVr RECOVERY CURRENT lrr (A) SWITCHING LOSS CHARACTERISTICS (TYPICAL) 17.0 16.0 VCC = 600V 15.0 VD = 15V Eon 14.0 Tj = 25°C 13.0 Tj = 125°C 12.0 Inductive load 11.0 10.0 9.0 8.0 7.0 6.0 Eoff 5.0 4.0 3.0 2.0 1.0 0 0 20 40 60 80 100 120 RECOVERY TIME trr (µs) SWITCHING LOSS Eon, Eoff (mJ/pulse) FLAT-BASE TYPE INSULATED PACKAGE 10 1.0 8 0.8 6 0.6 4 0.4 2 0.2 0 –50 0 50 100 0 –50 150 Tj (°C) 0 50 100 150 Tj (°C) May 2009 8 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CS1D120 FLAT-BASE TYPE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 100 7 5 3 2 10–1 7 5 3 2 10–2 Single Pulse 7 5 IGBT part; 3 Per unit base = Rth(j-c)Q = 0.18°C/ W 2 FWDi part; Per unit base = Rth(j-c)F = 0.27°C/ W 10–3 –5 10 2 3 5 710–4 2 3 5 710–32 3 5 710–2 2 3 5 710–12 3 5 7100 2 3 5 7101 t(sec) May 2009 9