FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 1.Base TO-220 2.Collector 3.Emitter E Absolute Maximum Ratings Value Units VCBO Symbol Collector-Base Voltage Parameter 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 8 A ICP * Collector Current (Pulse) 16 A IB Base Current (DC) 4 A PC Collector Dissipation (TC = 25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdown Voltage IC = 500µA, IE = 0 700 400 V 9 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 BVEBO Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 V IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE1 hFE2 DC Current Gain VCE = 5V, IC = 2A VCE = 5V, IC = 5A VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A 1 V IC = 5A, IB = 1A 2 V IC = 8A, IB = 2A 3 V VBE(sat) Base-Emitter Saturation Voltage ©2004 Fairchild Semiconductor Corporation FJP3307D Rev. 1.0.0 1 8 5 mA 40 30 IC = 2A, IB = 0.4A 1.2 V IC = 5A, IB = 1A 1.6 V 1 www.fairchildsemi.com Symbol TC = 25°C unless otherwise noted (Continued) Parameter Conditions VF Diode Forward Voltage IC = 3A Cob Output Capatitance VCB = 10V, IE = 0, f = 1MHz tSTG Storage Time tF Fall Time VCC = 125V, IC = 5A IB1 = -IB2 = 1A, RL = 50Ω tSTG Storage Time tF Fall Time Min. Typ. Max 2.5 60 Units V pF VCC = 30V, IC = 5A, L=200µH IB1=1A, RBB = 0Ω, VBE(OFF)= -5V VCLAMP = 250V 3 µs 0.7 µs 2.3 µs 150 ns * Pulse test: PW=300µs, Duty cycle=2% hFE Classification FJP3307D Rev. 1.0.0 Classification H1 H2 hFE1 15 ~ 28 26 ~ 39 2 www.fairchildsemi.com FJP3307D High Voltage Fast Switching NPN Power Transistor Electrical Characteristics Figure 1. Static Characterstic Figure 2. DC Current Gain (H1 Grade) 100 5.0 VCE = 5V o IB=300mA 4.0 o TC = 125 C hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 4.5 3.5 3.0 2.5 IB=100mA 2.0 1.5 IB=50mA 1.0 o TC = - 25 C TC = 75 C o TC = 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 8 9 1 0.1 10 1 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. DC Current Gain (H2 Grade) 100 o TC = - 25 C TC = 75 C 10 VCE(sat),[V] SATURATION VOLTAGE hFE, DC CURRENT GAIN TC = 125 C Figure 4. Collector-Emitter Saturation Voltage VCE = 5V o o o TC = 25 C 10 1 0.1 1 IC = 5 IB o TC = 125 C 1 o TC = 75 C o TC = 25 C o TC = - 25 C 0.1 0.01 0.01 10 IC [A], COLLECTOR CURRENT 1 10 Figure 6. Output Capacitance 10 1000 COB [pF], OUTPUT CAPACITANCE IC = 5 IB VBE(sat)[V], SATURATION VOLTAGE 0.1 IC [A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage o 1 10 IC [A], COLLECTOR CURRENT TC = 25 C o TC = - 25 C o o TC = 125 C 0.1 0.01 TC = 75 C 0.1 1 100 10 10 IC [A], COLLECTOR CURRENT FJP3307D Rev. 1.0.0 f = 1MHz, IE = 0 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE 3 www.fairchildsemi.com FJP3307D High Voltage Fast Switching NPN Power Transistor Typical Performance Characteristics Figure 8. Reverse Biased Safe Operating Area 100 100 IC [A], COLLECTOR CURRENT PC [W}, COLLECTOR POWER DISSIPATION Figure 7. Power Derating 80 60 40 20 10 1 VCC = 50V, IB1 = - IB2 = 1A L = 1mH 0 0 25 50 75 100 125 150 175 0.1 10 200 o 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE TC [ C], CASE TEMPERATURE Figure 9. Forward Biased Safe Operating Area IC [A], COLLECTOR CURREMT 100 IC(MAX), Pulse 10µs 10 1ms IC(MAX), DC 100µs 1 0.1 o TC = 25 C Single Pulse 0.01 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE FJP3307D Rev. 1.0.0 4 www.fairchildsemi.com FJP3307D High Voltage Fast Switching NPN Power Transistor Typical Performance Characteristics (Continued) FJP3307D High Voltage Fast Switching NPN Power Transistor Mechanical Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters FJP3307D Rev. 1.0.0 5 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18