MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM100CVA060 PM100CVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM100CVA060 FEATURE • 3φ 100A, 600V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage (P-FO available from upper leg devices) • Acoustic noise-less 11kW class inverter application • UL Recognized Yellow Card No. E80276(N) File No. E80271 APPLICATION General purpose inverter, servo drives and other motor controls Dimensions in mm 1234 89 76 ±0.5 74 ±0.25 5678 9 10 11 12 6–M5NUTS 1314 1516 U 4–φ5.5 MOUNTING HOLES V W 20 20 95 ±0.25 73.7 2.54 ±0.25 171819 43.57 ±0.3 14.1 ±0.25 14.1 ±0.25 14.1 ±0.25 16.5 N 10 7.5 17 14.6 ±0.3 LABEL 3.49 ±0.25 4-φ3 C0.7 2.54 ±0.25 2.54 ±0.25 2.54 ±0.25 3.49 ±0.25 0.64 22 31.6 32.6 +1.0 A 22 –0.5 21.2 19.7 4 TERMINAL CODE 1. WFO 8. VVP1 15. VNC 2. VWPC 9. UFO 16. VN1 3. WP 10. VUPC 17. UN 4. VWP1 11. UP 18. VN 5. VFO 12. VUP1 19. WN 6. VVPC 13. NC 14. FO 7. VP 4–R6 12.5 110 20 1 ±0.3 20 P 7.5 17 B 7.5 PACKAGE OUTLINES A : DETAIL Jun. 2005 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CVA060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM FO NC VNC WN VN1 VN WP VWP1 VP VVP1 UP VUP1 VWPC WFO VVPC VFO VUPC UFO UN Rfo Rfo GND FO In VCC Rfo Rfo GND FO In VCC GND FO VCC GND FO In VCC GND FO In VCC GND FO In VCC GND Si OUT GND Si OUT GND Si OUT GND Si OUT GND Si OUT In TEMP GND Si OUT Th Rfo=1.5kΩ NC N W V U P MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCES ±IC ±ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C Ratings 600 100 200 307 –20 ~ +150 Unit V A A W °C Ratings Unit 20 V 20 V 20 V 20 mA CONTROL PART Symbol Parameter VD Supply Voltage VCIN Input Voltage VFO Fault Output Supply Voltage IFO Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO and FO terminal Jun. 2005 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CVA060 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Parameter Supply Voltage Protected by VCC(PROT) SC Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value or without switching Symbol TC Tstg Viso Module Case Operating Temperature Storage Temperature Isolation Voltage (Note-1) 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings Unit 400 V 500 V –20 ~ +100 °C –40 ~ +125 2500 °C Vrms (Note-1) TC measurement point is below. (3mm depth at the center of the side of base plate) Tc ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Test Condition Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage VD = 15V, IC = 100A VCIN = 0V –IC = 100A, VD = 15V, VCIN = 15V Switching Time VD = 15V, VCIN = 0V↔15V VCC = 300V, IC = 100A Tj = 125°C Inductive Load (upper and lower arm) Collector-Emitter Cutoff Current VCE = VCES, VCIN = 15V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min. — — — 0.4 — — — — — — Limits Typ. 2.35 2.55 2.20 0.8 0.2 0.3 1.8 0.6 — — Max. 2.8 3.05 3.30 2.1 0.3 1.1 2.9 1.2 1 10 Min. — — 1.2 1.7 158 Limits Typ. 40 13 1.5 2.0 — Max. 55 18 1.8 2.3 — Unit V V µs mA CONTROL PART Symbol Parameter Test Condition VN1-VNC V*P1-V*PC ID Circuit Current VD = 15V, VCIN = 15V Vth(ON) Vth(OFF) SC Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC –20≤ Tj ≤ 125°C, VD = 15V toff(SC) OT OTr UV UVr IFO(H) IFO(L) tFO VD = 15V — Over Temperature Protection Base-plate Temperature detection, VD = 15V Supply Circuit Under-Voltage Protection –20≤ Tj ≤ 125°C Fault Output Current VD = 15V, VFO = 15V (Note-2) Minimum Fault Output Pulse Width VD = 15V (Note-2) Trip level Reset level Trip level Reset level 10 Unit mA V A — µs °C 111 — 11.5 — — — 118 100 12.0 12.5 — 10 125 — 12.5 — 0.01 15 1.0 1.8 — V mA ms (Note-2) Fault output is given only when the internal SC, OT & UV protection. Fault output of OT protection operate by lower arm Fault output of OT, UV protection given pulse while over level. Jun. 2005 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CVA060 FLAT-BASE TYPE INSULATED PACKAGE THERMAL RESISTANCES Symbol Rth(j-c)Q Rth(j-c)F Rth(c-f) Parameter Junction to case Thermal Resistances Contact Thermal Resistance Test Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Case to fin, Thermal grease applied (per 1 module) Min. — — — Limits Typ. — — — Max. 0.407 0.70 0.027 Min. 2.5 2.5 — Limits Typ. 3.0 3.0 560 Max. 3.5 3.5 — Unit °C/W MECHANICAL RATINGS AND CHARACTERISTICS Symbol — — — Test Condition Parameter Mounting torque Mounting torque Weight Mounting part Main terminal screw : M5 screw : M5 Unit N•m N•m g RECOMMENDED CONDITIONS FOR USE Symbol VCC Parameter Supply Voltage VD Control Supply Voltage VCIN(ON) VCIN(OFF) Input ON Voltage Input OFF Voltage Arm Shoot-through Blocking Time tdead fPWM PWM Input Frequency Test Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Recommended value ≤ 400 Unit V 15 ± 1.5 V ≤ 0.8 ≥ 4.0 V For IPM’s each input signals ≥ 2.5 µs Using Application Circuit input signal of IPM, 3φ Sinusoidal PWM VVVF inverter ≤ 20 kHz (Note-3) With ripple satisfying the following conditions dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak Jun. 2005 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CVA060 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VD = 17V 13V 50 0 1 2 3 4 5 5 Tj = 25°C Tj = 125°C VD = 15V VCIN = 0V 4 3 2 1 0 0 50 100 200 150 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC(A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 6 5 Tj = 25°C Tj = 125°C 5 IC = 100A VCIN = 0V 3 SWITCHING TIME (µs) 4 3 2 1 2 toff 100 ton 7 5 tc(off) 3 tc(on) 2 Tj = 125°C VCC = 300V VD = 15V Inductive load 10–1 0 10 12 14 16 18 7 5 20 5 7 101 2 3 5 7 102 2 3 5 CONTROL SUPPLY VOLTAGE VD(V) COLLECTOR CURRENT IC (A) DIODE FORWARD CHARACTERISTICS (TYPICAL) DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 100 102 Tj = 25°C Tj = 125°C VD = 15V 3 VCIN = 15V 7 5 2 101 7 5 3 2 100 0 0.5 1.0 1.5 2.0 2.5 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 5 7 5 lrr 3 3 2 2 101 10–1 trr 7 5 7 5 3 2 100 3 VCC = 300V VD = 15V Inductive load 7 101 2 3 Tj = 25°C 2 Tj = 125°C 10–2 5 7 102 2 3 REVERS RECOVERY TIME trr (µs) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 15V 100 0 COLLECTOR RECOVERY CURRENT –IC (A) Tj = 25°C VCIN = 0V REVERSE RECOVERY CURRENT lrr (A) COLLECTOR CURRENT IC (A) 150 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) 5 7 COLLECTOR RECOVERY CURRENT –IC (A) Jun. 2005 MITSUBISHI <INTELLIGENT POWER MODULES> PM100CVA060 FLAT-BASE TYPE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT per 1 element) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi per 1 element) 7 Single Pulse 5 3 Per unit base = Rth(j – c)Q = 0.407°C/ W 2 100 7 5 3 2 10–1 7 5 3 2 10–2 7 5 3 2 10–3 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 TIME (s) 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) 101 7 Single Pulse 5 3 Per unit base = Rth(j – c)F = 0.70°C/ W 2 100 7 5 3 2 10–1 7 5 3 2 10–2 7 5 3 2 10–3 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 TIME (s) Jun. 2005