FAIRCHILD KSD1417

KSD1417
KSD1417
High Power Switching Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Complement to KSB1022
TO-220F
1
1.Base
2.Collector
3.Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
60
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
7
A
ICP
Collector Current (Pulse)
10
A
IB
Base Current
0.7
A
PC
Collector Dissipation (Ta=25°C)
2
W
PC
Collector Dissipation (TC=25°C)
30
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
60
V
5
V
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
Test Condition
IC = 50mA, IB = 0
Min.
60
Typ.
Max.
Units
V
ICBO
Collector Cut-off Current
VCB = 60V, IE = 0
100
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
3
mA
h FE1
hFE2
DC Current Gain
VCE = 3V, IC = 3A
VCE = 3V, IC = 7A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 3A, IB = 6mA
IC = 7A, IB = 14mA
0.9
1.2
1.5
2
2.5
2K
1K
15K
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 3A, IB = 6mA
1.5
tON
Turn ON Time
0.8
µs
tSTG
Storage Time
3
µs
tF
Fall Time
VCC = 45V, IC = 4.5A
IB1 = -IB2 = 6mA
RL = 10Ω
2.5
µs
©2000 Fairchild Semiconductor International
V
Rev. A, February 2000
KSD1417
Typical Characteristics
10
10k
8
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
VCE = 3V
IB = 1.4mA
IB = 1.2mA
6
IB = 1mA
IB = 0.8mA
4
IB = 0.6mA
IB = 0.4mA
2
IB = 0
IB = 0.2mA
100
0.1
0
0
2
4
6
1k
8
10
1
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
100
Figure 2. DC current Gain
10
10
Ic = 500 IB
VBE(sat)
1
VCE(sat)
VCE = 3V
9
IC[A], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
IC [A], COLLECTOR CURRENT
8
7
6
5
4
3
2
1
0.1
0.1
1
10
0
0.0
100
0.4
IC[A], COLLECTOR CURRENT
0.8
1.2
1.6
2.0
2.4
2.8
3.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
40
100
PC[W], POWER DISSIPATION
10
ICmax(DC)
100
1
10m 1mS 00u
s
mS
DC
S
1
0.1
VCEOMAX
IC[A], COLLECTOR CURRENT
35
ICmax(pulse)
30
25
20
15
10
5
0
0.01
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
100
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
KSD1417
Package Demensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E