MITSUBISHI RA01L9595M-101

MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA01L9595M
RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER
DESCRIPTION
The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage
increases. With a gate voltage around 0.5V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 1.5V (typical) and 2.0V
(maximum). At VGG=2.0V, the typical gate current is 1mA.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=3.3V, VGG=0V)
BLOCK DIAGRAM
2
3
1
4
5
1
RF Input (Pin)
2
Gate Voltage (VGG), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground
• Pout>1.4W, ηT>35% @ VDD=3.3V, VGG=2.0V, Pin=30mW
PACKAGE CODE: H58
• Frequency Range: 952-954MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=2.0V
• Module Size: 9.1 x 9.2 x 1.8 mm
RoHS COMPLIANCE
• RA01L8693MA -101 is a RoHS compliance products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA01L9595M -101
Antistatic tray,
25 modules/tray
RA01L9595M
MITSUBISHI ELECTRIC
1/14
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Feb. 2009
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA01L9595M
MAXIMUM RATINGS (Tcase=+25deg.C. unless otherwise specified)
SYMBOL PARAMETER
VDD
CONDITIONS
Drain Voltage
VGG<2.0V, ZG=ZL=50ohm
VGG
Gate Voltage
VDD<3.3V, Pin=0mW, ZG=ZL=50ohm
Pin
Input Power
Pout
Output Power
Tcase(OP)
Tstg
RATING
UNIT
6
V
3
V
50
mW
3
W
Operation Case Temperature Range
-30 to +90
°C
Storage Temperature Range
-40 to +110
°C
f=952-954MHz, VGG<2.0V
ZG=ZL=50ohm
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C , ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
Pout
ηT
MAX
UNIT
954
MHz
952
1.4
W
35
%
Total Efficiency
nd
ρin
Input VSWR
Pout(2)
Output Power
Harmonic
Total Efficiency
VDD=3.3V
VGG=2.0V
PiN=30mW
VDD=5.0V, VGG=2.0V ,PiN=30mW
VDD=5.0V
PiN=30mW,POUT=2W (VGG control)
VDD=2.5/3.3/6.0V, VGG=0.5-2.0V,
Stability
PIN=20-50mW ,
Load VSWR Tolerance
VDD=6.0V, PiN=30mW,
Pout =2W (VGG control),
Zg=50ohm, Load VSWR=20:1
Zg=50ohm,
—
TYP
Output Power
2
—
MIN
Frequency Range
2fo
ηT(2)
CONDITIONS
Po<2.5W
-30
dBc
4.4:1
—
2
W
32
%
No parasitic oscillation
—
No degradation or destroy
—
Load VSWR=4:1
All parameters, conditions, ratings, and limits are subject to change without notice.
RA01L9595M
MITSUBISHI ELECTRIC
2/14
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Feb. 2009
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA01L9595M
TYPICAL PERFORMANCE (Vdd=3.3V,Tcase=+25deg.C, ZG=ZL=50Ω, unless otherwise specified)
RA01L9595M
MITSUBISHI ELECTRIC
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA01L9595M
TYPICAL PERFORMANCE (Vdd=5.0V,Tcase=+25deg.C, ZG=ZL=50Ω, unless otherwise specified)
RA01L9595M
MITSUBISHI ELECTRIC
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA01L9595M
RoHS COMPLIANT
TYPICAL PERFORMANCE (Vdd=3.3V, Vgg=2V, Pout=1W , Modulation Type：BPSK , Ta=25deg.C)
Output Power versus FREQUENCY
CF=952.2MHz
DataRate：40Kbps
CF=953.8MHz,
DataRate：40Kbps
30
30
20
20
10
10
Output(dBm)
40
Output(dBm)
40
0
-10
0
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
951.6
951.8
952
952.2
952.4
952.6
952.8
-60
953.2
953.4
953.6
freq(MHz)
CF=952.3MHz,
DataRate：80Kbps
20
20
10
10
Output(dBm)
30
Output(dBm)
40
30
0
-10
954.2
954.4
0
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
951.7
951.9
952.1
952.3
952.5
952.7
-60
953.1
952.9
freq(MHz)
CF=952.5MHz,
DataRate：160Kbps
953.3
953.5
953.7
freq(MHz)
953.9
954.1
954.3
CF=953.5MHz
DataRate：160Kbps
40
40
30
30
20
20
10
10
Output(dBm)
Output(dBm)
954
CF=953.7MHz
DataRate：80Kbps
40
0
-10
0
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
951.7
953.8
freq(MHz)
951.9
952.1
952.3
952.5
952.7
952.9
953.1
953.3
-60
952.7
952.9
freq(MHz)
RA01L9595M
953.1
953.3
953.5
953.7
953.9
954.1
954.3
freq(MHz)
MITSUBISHI ELECTRIC
5/14
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Feb. 2009
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA01L9595M
RoHS COMPLIANT
TYPICAL PERFORMANCE (Vdd=5.0V, Vgg=2V, Modulation Type：BPSK , Pin control, Ta=25deg.C)
Output Power versus FREQUENCY
CF=952.2MHz
DataRate：40Kbps
CF=953.8MHz,
DataRate：40Kbps
40
40
Po=1.5W
30
20
Po=1W
Po=1.5W
20
Po=1W
10
Output(dBm)
Output(dBm)
10
30
0
-10
0
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
951.6
951.8
952
952.2
952.4
952.6
952.8
-60
953.2
953.4
953.6
freq(MHz)
CF=952.3MHz,
DataRate：80Kbps
954.2
954.4
40
30
Po=1.5W
30
20
Po=1W
20
Po=1.5W
Po=1W
10
Output(dBm)
10
Output(dBm)
954
CF=953.7MHz
DataRate：80Kbps
40
0
-10
0
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
951.7
951.9
952.1
952.3
952.5
952.7
-60
953.1
952.9
953.3
953.5
freq(MHz)
953.7
953.9
954.1
954.3
freq(MHz)
CF=952.5MHz,
DataRate：160Kbps
CF=953.5MHz
DataRate：160Kbps
40
40
30
Po=1.5W
30
Po=1.5W
20
Po=1W
20
Po=1W
10
10
Output(dBm)
Output(dBm)
953.8
freq(MHz)
0
-10
0
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
951.7
951.9
952.1
952.3
952.5
952.7
952.9
953.1
953.3
-60
952.7
952.9
freq(MHz)
RA01L9595M
953.1
953.3
953.5
953.7
953.9
954.1
954.3
freq(MHz)
MITSUBISHI ELECTRIC
6/14
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Feb. 2009
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA01L9595M
OUTLINE DRAWING (mm)
1 8.6+/-0.2
RF Input (Pin)
2 8.0+/-0.2
Gate Voltage (VGG)
3 4.6+/-0.2
Drain Voltage (VDD)
4 2.55+/-0.2
RF Output (Pout)
9.2+/-0.2
5 RF Ground
①
7.8+/-0.2
⑤
5.6+/-0.2
③
4.2+/-0.2
7.6+/-0.2
9.1+/-0.2
8.6+/-0.1
②
④
8.7+/-0.1
0.75+/-0.1
1.8+/-0.15
INDEXMARK(Pin)
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
RA01L9595M
MITSUBISHI ELECTRIC
7/14
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Feb. 2009
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA01L9595M
TEST BLOCK DIAGRAM
Spectrum
Analyzer
Power
Meter
Signal
Generator
Attenuator
Preamplifier
Attenuator
Directional
Coupler
DUT
ZG=50Ω
ZL=50Ω
1
4
Directional
Coupler
Attenuator
Power
Meter
5
3
2
C1
C1, C2: 4700pF, 22uF in parallel
C2
+
DC Power
Supply VGG
+
DC Power
Supply VDD
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground
EQUIVALENT CIRCUIT
RA01L9595M
MITSUBISHI ELECTRIC
8/14
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Feb. 2009
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA01L9595M
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate. For mechanical protection, a metal cap is attached (witch makes the
improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto the substrate, wire bonded
to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors
form the bias and matching circuits. The DC and RF connection is provided at the backside of substrate.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by fast thermal changes)
b) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
c) Frequent on/off switching that causes thermal expansion of the resin
d) ESD, surge, over voltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Thermal Design of the Heat Sink:
At Pout=1.4W, VDD=3.3V and Pin=30mW each stage transistor operating conditions are:
Pin
Pout
Rth(ch-case)
IDD @ ηT=40%
VDD
Stage
(W)
(W)
(V)
(°C/W)
(A)
st
0.03
0.3
57.2
0.11
1
3.3
nd
2
0.3
1.4
7.6
1.10
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (3.3V x 0.11A – 0.3W + 0.03W) x 57.2°C/W = Tcase + 5.3 °C
Tch2 = Tcase + (3.3V x 1.10A – 1.4W + 0.3W) x 7.6°C/W
= Tcase + 19.2 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 70°C. For an ambient
temperature Tair=45°C and Pout=3W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout
+ Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (70°C - 45°C) / (1.4W/35% – 1.4W + 0.03W) = 9.51°C/W
When mounting the module with the thermal resistance of 9.51°C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 30.3 °C
Tch2 = Tair + 44.2 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
RA01L9595M
MITSUBISHI ELECTRIC
9/14
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Feb. 2009
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA01L9595M
Output Power Control:
The recommended method to control the output power is by the input power (Pin).
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50Ω
c) Is the source impedance ZG=50Ω
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips
and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally
induced mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions
exceeding those of RFID reader / writer.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile
radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout,
which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures
are found.
RA01L9595M
MITSUBISHI ELECTRIC
10/14
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Feb. 2009
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA01L9595M
P.C.B Land Pattern Recommendation
③
8.60
8.00
4.60
2.55
0.5
②
9.70
8.60
5.60
4.20
0 .4
°
60
EQUILATERAL TRIANGLE ARRANGEMENT
④
THROUGH HOLE
①
Mounting method
Mitsubishi recommends device mounting like Fig.1. In order to heat radiation, we recommend to fix
the PCB and heat sink by screw. This PCB has through holes that filled up with resin to restrain the
solder flow under the RF Ground. The interval of through holes is 0.4mm and these holes are
arranged in the shape of equilateral triangles.
Fig.1
Drain
Gate
RF Ground
RF Input
RF Output
Fix with screws.
Reflow soldering
Printed Circuit board
heat sink
# Note: Mitsubishi Heat Sink size=30 * 60 * 10 Unit: mm
RA01L9595M
MITSUBISHI ELECTRIC
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA01L9595M
Reflow soldering
Regarding to reflow soldering, Mitsubishi recommend the heat profile of Fig.2. Reflow soldering is
able to do till 3 times.
Fig.2
Temperature
Peak 255+0/-5℃MAX
10sec max
above 200℃
70 sec max
175±10℃
110±20 sec
Time(sec)
RA01L9595M
MITSUBISHI ELECTRIC
12/14
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Feb. 2009
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA01L9595M
Precautions for the use of MITSUBISHI silicon RF power amplifier devices
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding
operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact
one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer
mobile communication terminals and were not specifically designed for use in other applications. In particular, while these
products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol
that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements.
Examples of critical communications elements would include transmitters for base station applications and fixed station
applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially
for systems that may have a high impact to society.
3.RA series and RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4.In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or
destroyed due to the RF-swing exceed the breakdown voltage.
5.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize
a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for
RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under extreme conditions.
6.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of operating into
a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is risk for
burn out of the transistors and burning of other parts including the substrate in the module.
7.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch
condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended
that verification of no parasitic oscillation be performed at the completed equipment level also.
8.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in
the specification sheet.
9.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s
original form.
10.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data
sheet.
11. Please refer to the additional precautions in the formal specification sheet.
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum
rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the
drain and the source of the device. These results causes in fire or injury.
RA01L9595M
MITSUBISHI ELECTRIC
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MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA01L9595M
Keep safety first in your circuit designs !
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there
is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any
malfunction or mishap.
Notes regarding these
- These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best
suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights,
belonging to Mitsubishi Electric Corporation or a third party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in
the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
- All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents
information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation
without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi
Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before
purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors.
Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the
Mitsubishi Semiconductor home page (http://www.mitsubishichips.com).
- When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and
algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the
information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss
resulting from the information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under
circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
- The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials.
- If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license
from the Japanese government and cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is
prohibited.
- Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on
these materials or the products contained therein.
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