MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF ................................................................... 900A ● VRRM ...................................................... 4500V ● Insulated Type ● 2-element in a Pack ● Copper Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 57 ±0.25 57 ±0.25 4-M8 NUTS A1 A2 E A1 (E) A2 (E) E C E K2 (C) 15 40 LABEL CM K1 (C) C 140 K2 C 124 ±0.25 K1 20 >PPS< 29.5 G CIRCUIT DIAGRAM 6-φ7 MOUNTING HOLES 5 Screwing depth min. 16.5 38 +1.0 0 61.5 18 High Voltage Diode Module May 2009 1 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module MAXIMUM RATINGS Symbol Item Conditions VRRM VRSM VR(DC) IF Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current IFSM Surge forward current I2t Current-squared, time integration Viso Isolation voltage Tj Top Tstg Junction temperature Operating temperature Storage temperature Tj = 25 °C Tj = 25 °C Tj = 25 °C TC = 25 °C Tj = 25 °C start, tw = 8.3 ms Half sign wave Tj = 25 °C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. — — — Ratings Unit 4500 4500 3000 900 V V V A 6400 A 170 kA2s 6000 V –40 ~ +150 –40 ~ +125 –40 ~ +125 °C °C °C ELECTRICAL CHARACTERISTICS Symbol Item Conditions IRRM Repetitive reverse current VRM = VRRM VFM Forward voltage IF = 900 A trr Irr Qrr Erec Reverse recovery time VR = 2250 V, IF = 900 A Reverse recovery current di/dt = –1800 A/µs Reverse recovery charge Reverse recovery energy (Note 2) Ls=100nH, Tj = 125 °C (Note 1) Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Min — — — — — — — — Limits Typ — 8 4.00 3.60 0.9 900 650 0.7 Max 8 20 — — — — — — Unit mA V µs A µC J/P Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt. High Voltage Diode Module May 2009 2 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module THERMAL CHARACTERISTICS Symbol Item Conditions Rth(j-c) Thermal resistance Rth(c-f) Contact thermal resistance Junction to case (per 1/2 module) Case to Fin, λgrease = 1W/m·K D(c-f)=100µm, (per 1/2 module) Min Limits Typ Max — — 20.0 K/kW — 16.0 — K/kW Min 7.0 3.0 — 600 19.5 32 — — Limits Typ — — 1.5 — — — 35 0.25 Max 13.0 6.0 — — — — — — Unit MECHANICAL CHARACTERISTICS Item Symbol Mt Ms m CTI Da Ds LP CE RCC’+EE’ Conditions M8: Main terminals screw M6: Mounting screw Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance — — — — — Tc = 25 °C Unit N·m N·m kg — mm mm nH mΩ PERFORMANCE CURVES REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) FORWARD CHARACTERISTICS (TYPICAL) 1.2 1800 REVERSE RECOVERY ENERGY Erec (J/p) FORWARD CURRENT IF (A) 1600 1400 1200 1000 800 600 400 200 0 VR = 2250V, di/dt = 1800A/µs Tj = 125°C, LS = 100nH 1.0 0.8 0.6 0.4 0.2 Tj = 25°C Tj = 125°C 0 2 4 6 0 8 FORWARD VOLTAGE VF (V) 0 500 1000 1500 2000 FORWARD CURRENT IF (A) High Voltage Diode Module May 2009 3 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 104 VR = 2250V, di/dt = 1800A/µs Tj = 125°C, LS = 100nH 3 2 2 Irr 103 7 5 7 5 3 3 2 2 trr 100 102 7 5 7 5 3 3 2 2 10-1 2 10 2 3 4 5 7 103 VR ≤ 3000V, di/dt ≤ 2600A/µs Tj = 125°C REVERSE RECOVERY CURRENT Irr (A) 3 101 2500 7 5 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (µs) 7 5 101 2 3 4 5 2000 1500 1000 500 0 7 104 0 1000 2000 3000 4000 5000 REVERSE VOLTAGE VR (V) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Rth(j–c) = 20K/kW 1.0 n 0.8 Z th( j –c ) ( t ) = 0.6 0.4 Ri 1–exp Σ i=1 NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 – t ti 1 2 3 4 Ri [K/kW] 0.0059 0.0978 0.6571 0.2392 τ i [sec] 0.0002 0.0074 0.0732 0.4488 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) High Voltage Diode Module May 2009 4