FAIRCHILD KSC2881

KSC2881
KSC2881
Power Amplifier
•
•
•
•
Collector-Emitter Voltage : VCEO=120V
Current Gain Bandwidth Productor : fT=120MHz
Collector Dissipation : PC=1~2W in Mounted on Ceramic Board
Complement to KSA1201
SOT-89
1
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
IB
PC
PC*
Collector Power Dissipation
TJ
TSTG
Value
120
Units
V
120
V
5
V
Collector Current
800
mA
Base Current
160
mA
500
1,000
mW
mW
Junction Temperature
150
°C
Storage Temperature
-55 ~ 150
°C
* Mounted on Ceramic Board (250mm2x0.8mm)
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
Test Condition
IC=10µA, IB=0
BVEBO
Emitter-Base Breakdown Voltage
IE=1mA, IC=0
ICBO
Collector Cut-off Current
VCB=120V, IE=0
IEBO
Emitter Cut-off Current
VBE=5V, IC=0
hFE
DC Current Gain
VCE=5V, IC=100mA
Min.
120
Typ.
Max.
Units
V
100
nA
100
nA
5
V
80
240
VCE (sat)
Collector-Emitter Saturation Voltage
IC=500mA, IB=50mA
1.0
V
VBE (on)
Base-Emitter On Voltage
VCE=5V, IC=500mA
1.0
V
fT
Current Gain Bandwidth Product
VCE=5V, IC=100mA
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
120
MHz
30
pF
hFE Classification
Classification
O
Y
hFE
80 ~ 160
120 ~ 240
Marking
SCX
hFE grade
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2881
Typical Characteristics
1.0
0.8
VCE = 5V
IB = 20mA
IC [mA], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
IB = 50mA
IB = 10mA
0.6
IB = 5mA
0.4
IB = 3mA
IB = 2mA
0.2
IB = 1mA
4
8
12
0.6
0.4
0.2
0.0
0.0
0.0
0
0.8
16
0.4
0.6
0.8
1.0
VBE[mV], SATURATION VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterisitcs
Figure 2. Base-Emitter On Voltage
1
1000
IC = 10 IB
VCE(sat) [V], SATURATION VOLTAGE
VCE = 5 V
hFE, DC CURRENT GAIN
0.2
100
0.1
0.01
10
1
10
100
1
1000
10
100
1000
IC [mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Collector-Emitter Saturation Voltage
1.6
10000
IC [mA], COLLECTOR CURRENT
PC [W], POWER DISSIPATION
o
1.2
2
Mounted on Ceramic Board (250 mm x 0.8 mm)
0.8
0.4
0.0
0
50
100
150
o
Ta [ C], AMBIENT TEMPERATURE
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
200
Ta = 25 C
Single Pulse
IC MAX. (Pulse)
1000
10 ms
1 ms
IC MAX. (DC)
100 ms
100
10
1
0.1
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A2, September 2002
KSC2881
Package Dimensions
SOT-89
1.50 ±0.20
4.50 ±0.20
(0.40)
4.10
(1.10)
2.50
±0.20
C0.2
±0.20
(0.50)
1.65 ±0.10
0.50 ±0.10
0.40 ±0.10
0.40 +0.10
–0.05
1.50 TYP 1.50 TYP
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet series™
Bottomless™
FAST®
FASTr™
CoolFET™
CROSSVOLT™ FRFET™
GlobalOptoisolator™
DOME™
EcoSPARK™
GTO™
E2CMOS™
HiSeC™
EnSigna™
I2C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1