KSC2518 KSC2518 High Speed, High Voltage Switching • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Load TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 8 A IB Base Current (DC) PC Collector Dissipation (TC=25°C) 1 A 40 W TJ TSTG Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C * PW≤350µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = 2A, IB1 = 0.4A, L = 1mH Min. 400 Max. Units V VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = 2A, IB1 = -IB2 = 0.4A Ta = 125°C, L = 180µH, Clamped 450 V VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = 4A, IB1 = 0.8A, -IB2 = 0.4A Ta= 125°C, L = 180µH, Clamped 400 V ICBO Collector Cut-off Current VCB = 400V, IE = 0 ICER Collector Cut-off Current VCE = 400V, RBE = 51Ω @ TC= 125°C ICEX1 ICEX2 Collector Cut-off Current VCE = 400V, VBE(off) = -1.5V VCE = 400V, VBE(off) = -1.5V @ TC= 125°C 10 µA 1 mA 10 1 µA mA 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE1 hFE2 * DC Current Gain VCE = 5V, IC = 0.3A VCE = 5V, IC = 1.5A VCE(sat) * Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1 V VBE(sat) * Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V tON Turn ON Time µs Storage Time 2.5 µs tF Fall Time VCC = 150V, IC = 2A IB1 = - IB2 = 0.4A RL = 75Ω 1 tSTG 0.7 µs 20 10 80 * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification R O Y hFE1 20 ~ 40 30 ~ 60 40 ~ 80 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2518 Typical Characteristics 5 1000 4 IB=0.5A hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE = 5V Pulsed IB=0.4A IB=0.3A IB=0.2A 3 2 IB=0.1A IB=0.05A 1 100 10 0 0 2 4 6 8 1 0.01 10 0.1 Figure 1. Static Characteristic Figure 2. DC current Gain 10 100 IC=5IB Plsed IC =5IB 1=-5IB2 Pulsed, VCC =150V VBE(sat) 1 0.1 VCE(sat) 0.01 0.01 10 ton[uS], TURN ON TIME tstg[uS], STORAGE TIME tf[uS], FALL TIME VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 0.1 1 tstg 1 tf ton 0.1 0.1 10 1 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Turn On, Storage and Fall Time vs Collector Current 5 PW 10 Dissipation Limited DC 1m 1 =1 0u s 10 0u s s m 10 s b S/ 3 2 ite d 1 VCEX(SUS) m Li 0.1 4 VCEO(SUS) IC[A], COLLECTOR CURRENT 100 IC[A], COLLECTOR CURRENT 1 0 0.01 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Forward Bias Safe Operating Area ©2000 Fairchild Semiconductor International 0 100 200 300 400 500 VCE(s), COLLECTOR-EMITTER VOLTAGE Figure 6. Reverse Bias Safe Operating Area Rev. A, February 2000 KSC2518 Typical Characteristics (Continued) 160 20 PD[W], POWER DISSIPATION 140 dT[%], IC DERATION 120 100 S/b DI LIM SS ITE IP D AT IO N LI M UT ED 80 60 40 20 0 15 10 5 0 0 50 100 150 200 o TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International 0 50 100 150 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, February 2000 KSC2518 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E