FAIRCHILD KSB1149

KSB1149
KSB1149
Low Collector Saturation Voltage
Built-in Damper Diode at E-C
• High DC Current Gain
• High Power Dissipation : PC=1.3W (Ta=25°C)
TO-126
1
1. Emitter
2.Collector
3.Base
PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
- 100
Units
V
VCEO
Collector-Emitter Voltage
- 100
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current (DC)
-3
A
ICP
*Collector Current (Pulse)
-5
A
PC
Collector Dissipation (Ta=25°C)
1.3
W
PC
Collector Dissipation (TC=25°C)
15
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB = - 100V, IE = 0
Min.
Typ.
Max.
- 10
Units
µA
-2
mA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
hFE1
hFE2
* DC Current Gain
VCE = - 2V, IC = - 1.5A
VCE = - 2V, IC = - 3A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 1.5A, IB = - 1.5mA
- 0.9
- 1.2
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = - 1.5A, IB = - 1.5mA
- 1.5
-2
V
tON
Turn ON Time
µs
Storage Time
2
µs
tF
Fall Time
VCC = - 40V, IC = - 1.5A
IB1 = - IB2 = - 1.5mA
RL = 27Ω
0.5
tSTG
1
µs
2000
1000
20000
* Pulse test: PW≤350µs, duty Cycle≤2% Pulsed
hFE Classification
Classification
O
Y
G
hFE1
2000 ~ 5000
4000 ~ 12000
6000 ~ 20000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB1149
Typical Characteristics
-5
100000
IB =
-1
m
A
-4
VCE = -2V
Pulsed
IB=-500uA
IB =-400uA
IB=-800uA
IB =-300uA
hFE, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
IB=-900uA
IB=-700uA
IB=-200uA
IB =-600uA
-3
IB=-100uA
-2
-1
-0
-0
-1
-2
-3
-4
10000
1000
100
-0.01
-5
-0.1
VCE[V], COLLECTOR-EMITTER VOLTAGE
-10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-100
-10
Ic = 1000 IB
Pulsed
Ic(Pulse)
-10
20
ati
on
-1
10
0m
m
s
s
Lim
ite
d
d
VCE (sat)
sip
ite
Lim
VBE(sat)
-1
Dis
s/b
IC[A], COLLECTOR CURRENT
Ic(DC)
s
0u
10 us
0
30
s
1m
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-1
-0.1
o
Tc=25 C
Single Pulse
-0.01
-0.1
-0.1
-1
-1
-10
-10
-100
500
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
20
160
PC[W], POWER DISSIPATION
140
dT[%], Ic DERATING
120
100
80
s/b
DI
60
40
LIM
ITE
D
SS
IP
A
TI
O
20
N
LI
M
IT
ED
15
10
5
0
0
25
50
75
100
125
150
175
200
o
TC[ C], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
KSB1149
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E