FAIRCHILD KSC5386

KSC5386
KSC5386
High Voltage Color Display Horizontal
Deflection Output
(Damper Diode Built In)
•
•
•
•
Equivalent Circuit
C
High Collector-Base Breakdown Voltage : BVCBO=1500V B
High Speed Switching : tF=0.1µs (Typ)
Wide S.O.A
For C-Monitor (48KHz)
TO-3PF
1
1.Base
50Ω typ.
2.Collector
3.Emitter
E
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
IC
ICP
Collector Current (Pulse)
Value
Units
1500
V
800
V
Emitter-Base Voltage
6
V
Collector Current (DC)
7
A
16
A
50
W
°C
PC
Collector Dissipation (TC=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
150
~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Parameter
Test Condition
Max.
Units
ICES
Symbol
Collector Cut-off Current
VCE = 1400V, RBE = 0
Min.
Typ.
1
ICBO
Collector Cut-off Current
VCB = 800V, IE = 0
10
mA
µA
IEBO
Emitter Cut-off Current
VEB = 4V, IC = 0
40
250
mA
hFE
DC Current Gain
VCE = 5V, IC = 1.0A
8
22
VCE (sat)
Collector-Emitter Saturation Voltage
IC = 5A, IB = 1.2A
4.2
VBE (sat)
Base-Emitter Saturation Voltage
IC = 5A, IB = 1.2A
1.5
V
VF
Damper Diode Turn On Voltage
IF = 6A
2
tF
Fall Time
VCC = 200V, IC = 4A, IB1 = 0.8A,
IB2 = -1.6A, RL = 50Ω
V
µs
0.2
V
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Rθjc
©2000 Fairchild Semiconductor International
Item
Thermal Resistance, Junction to Case
Max
2.37
Unit
°C/W
Rev. B. February 2000
KSC5386
Typical Characteristics
©2000 Fairchild Semiconductor International
Rev. B. February 2000
KSC5386
Typical Characteristics (continued)
©2000 Fairchild Semiconductor International
Rev. B. February 2000
KSC5386
Package Dimensions
TO-3PF
4.50 ±0.20
5.50 ±0.20
15.50 ±0.20
2.00 ±0.20
°
22.00 ±0.20
23.00 ±0.20
10
1.50 ±0.20
16.50 ±0.20
2.50 ±0.20
14.50 ±0.20
0.85 ±0.03
2.00 ±0.20
16.50 ±0.20
2.00 ±0.20
4.00 ±0.20
3.30 ±0.20
+0.20
0.75 –0.10
©2000 Fairchild Semiconductor International
2.00 ±0.20
3.30 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
+0.20
0.90 –0.10
5.50 ±0.20
26.50 ±0.20
10.00 ±0.20
(1.50)
2.00 ±0.20
2.00 ±0.20
14.80 ±0.20
3.00 ±0.20
ø3.60 ±0.20
Rev. B. February 2000
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PowerTrench™
QFET™
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LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. B. February 2000