HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ Features Description • RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored change. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motro drives, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. • RoHS compliant D G TO-3PN G DS S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 130oC) IDM Drain Current - Pulsed 300 A EAS Single Pulsed Avalanche Energy 1153 mJ PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Parameter (Note 1) Ratings 55 Units V ±20 V 75 A (TC = 25oC) 288.5 W - Derate above 25oC 1.92 W/oC -55 to +175 oC o 300 C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient ©2007 Fairchild Semiconductor Corporation HUF75344A3 Rev. A1 Ratings 0.52 40 1 Units o C/W www.fairchildsemi.com HUF75344A3 N-Channel UltraFET Power MOSFET October 2007 Device Marking HUF75344A3 Device HUF75344A3 Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units 55 - - V - 0.07 - V/oC µA Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V, TJ = 25oC IDSS Zero Gate Voltage Drain Current VDS = 50V, VGS = 0V - - 1 VDS = 45V, VGS = 0V, TJ = 150oC - - 250 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 Gate Threshold Voltage VGS = VDS, ID = 250µA 2 - 4 V Static Drain to Source On Resistance VGS = 10V, ID = 75A - 6.5 8.0 mΩ VDS = 25V, VGS = 0V f = 1MHz - 3650 4855 pF - 980 1305 pF - 135 205 pF - 160 208 nC - 86 112 nC 7 9 nC - 17 - nC - 28 - nC o ID = 250µA, Referenced to 25 C nA On Characteristics VGS(th) RDS(on) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 20V VGS = 0V to 20V Qg(10) Total Gate Charge at 10V VGS = 0V to 10V Qg(th) Threshold Gate Charge VGS = 0V to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 30V ID = 75A Ig = 1mA Switching Characteristics tON Turn-On Time - 146 310 ns td(on) Turn-On Delay Time - 19 48 ns tr Turn-On Rise Time - 126 262 ns td(off) Turn-Off Delay Time - 61 130 ns tf Turn-Off Fall Time - 20 48 ns tOFF Turn-Off Time - 80 178 ns VDD = 30V, ID = 75A VGS =10V, RGEN = 3Ω Drain-Source Diode Characteristics VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.25 V trr Reverse Recovery Time - 79 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 75A dIF/dt = 100A/µs - 270 - nC Notes: 1: L = 0.41mH, IAS = 75A, VDD = 50V, VGS = 10V, RG = 25Ω, Starting TJ = 25oC HUF75344A3 Rev. A1 2 www.fairchildsemi.com HUF75344A3 N-Channel UltraFET Power MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 100 200 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 100 ID,Drain Current[A] ID,Drain Current[A] 400 Figure 2. Transfer Characteristics o 175 C *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 2. TC = 25 C 7 0.1 1 1 VDS,Drain-Source Voltage[V] 2 6 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 VGS,Gate-Source Voltage[V] 500 IS, Reverse Drain Current [A] 0.015 VGS = 10V 0.010 VGS = 20V 0.005 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TJ = 25 C 0.000 0 70 140 210 ID, Drain Current [A] 280 1 0.0 350 Figure 5. Capacitance Characteristics *Note: 1. VGS = 0V 2. f = 1MHz 4000 Coss 2000 VGS, Gate-Source Voltage [V] Ciss 1.5 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6000 2. 250µs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 8000 Capacitances [pF] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.020 RDS(ON) [Ω], Drain-Source On-Resistance o 25 C 10 *Notes: 1. 250µs Pulse Test 10 o -55 C VDS = 25V VDS = 30V VDS = 44V 8 6 4 2 Crss 0 0.1 HUF75344A3 Rev. A1 1 10 VDS, Drain-Source Voltage [V] *Note: ID = 75A 0 25 0 3 20 40 60 80 Qg, Total Gate Charge [nC] 100 www.fairchildsemi.com HUF75344A3 N-Channel UltraFET Power MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 75A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 160 500 50µs ID, Drain Current [A] ID, Drain Current [A] 100µs 100 1ms Operation in This Area is Limited by R DS(on) 10ms 10 DC *Notes: 120 80 40 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 1 1 10 VDS, Drain-Source Voltage [V] 0 25 80 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 t1 t2 0.02 0.01 0.01 *Notes: o 1. ZθJC(t) = 0.52 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 -5 10 HUF75344A3 Rev. A1 PDM 0.05 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com HUF75344A3 N-Channel UltraFET Power MOSFET Typical Performance Characteristics (Continued) HUF75344A3 N-Channel UltraFET Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms HUF75344A3 Rev. A1 5 www.fairchildsemi.com HUF75344A3 N-Channel UltraFET Power MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms HUF75344A3 Rev. A1 6 www.fairchildsemi.com HUF75344A3 N-Channel UltraFET Power MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters HUF75344A3 Rev. A1 7 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 8 HUF75344A3 Rev. A1 www.fairchildsemi.com HUF75344A3 N-Channel UltraFET Power MOSFET TRADEMARKS