FAIRCHILD KSD1222

KSD1222
KSD1222
Power Amplifier Applications
•
•
•
•
•
High DC Current Gain
Low Collector-Emitter Saturation Voltage
Built in a Damper Diode at E-C
Darlington TR
Complement to KSB907
1
I-PAK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
60
Units
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
3
A
IB
Base Current
0.3
A
Collector Dissipation (TC=25°C)
15
W
Collector Dissipation (Ta=25°C)
1
W
PC
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
Test Condition
IC = 25mA, IB = 0
Min.
40
Typ.
Max.
ICBO
Collector Cut-off Current
VCB = 60V, IE = 0
20
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
2.5
mA
hFE1
hFE2
DC Current Gain
VCE = 2V, IC = 1A
VCE = 2V, IC = 3A
V
2000
1000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 4mA
1.5
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2A, IB = 4mA
2
tON
Turn On Time
VCC = 30V, IC = 3A
IB1 = -IB2 = 6mA
RL = 10Ω
tSTG
Storage Time
tF
Fall Time
©2001 Fairchild Semiconductor Corporation
Units
V
V
0.1
µs
1
µs
0.2
µs
Rev. A1, January 2001
KSD1222
Typical Characteristics
5
10000
4
IB =300
3
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
VCE = 2V
µA
275µ A
250µ A
225 µ A
2
200µ A
1
IB = 175µ A
1000
IB = 0
0
0
1
2
3
4
100
0.1
5
1
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
4
V CE=2V
IC = 500IB
IC[A], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
VBE(sat)
VCE(sat)
1
0.1
0.1
1
3
2
1
0
0.0
10
0.8
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
3.2
20
IC MAX. (PULSE)
1ms
PC[W], POWER DISSIPATION
10ms
IC MAX. (DC)
DC
1
VCEO MAX.
0.1
0.01
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
2.4
Figure 4. Base-Emitter On Voltage
10
1
1.6
VBE[V], BASE EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
10
100
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, January 2001
KSD1222
Package Demensions
I-PAK
2.30 ±0.20
6.60 ±0.20
5.34 ±0.20
2.30TYP
[2.30±0.20]
±0.20
±0.30
16.10
±0.20
±0.30
9.30
0.76 ±0.10
1.80
0.80
MAX0.96
0.50 ±0.10
6.10
±0.20
(0.50)
0.70
(4.34)
±0.10
0.60
±0.20
(0.50)
2.30TYP
[2.30±0.20]
0.50 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
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SMART START™
Stealth™
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H2