RHRD440, RHRD460, RHRD440S, RHRD460S Data Sheet January 2002 4A, 400V - 600V Hyperfast Diodes Features The RHRD440, RHRD460, RHRD440S and RHRD460S are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . . 600V • Avalanche Energy Rated These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors. • Planar Construction Formerly developmental type TA49055. • General Purpose Ordering Information Packaging PART NUMBER PACKAGE Applications • Switching Power Supplies • Power Switching Circuits JEDEC STYLE TO-251 BRAND RHRD440 TO-251 RHR440 RHRD460 TO-251 RHR460 RHRD440S TO-252 RHR440 RHRD460S TO-252 RHR460 ANODE CATHODE CATHODE (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RHRD460S9A. JEDEC STYLE TO-252 Symbol CATHODE (FLANGE) K CATHODE ANODE A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 157oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG ©2002 Fairchild Semiconductor Corporation RHRD440, RHRD440S RHRD460, RHRD460S UNITS 400 400 400 4 600 600 600 4 V V V A 8 8 A 40 40 A 50 10 -65 to 175 50 10 -65 to 175 W mJ oC 300 260 300 260 oC oC RHRD440, RHRD460, RHRD440S, RHRD460S Rev. B RHRD440, RHRD460, RHRD440S, RHRD460S Electrical Specifications TC = 25oC, Unless Otherwise Specified RHRD440, RHRD440S SYMBOL TEST CONDITION RHRD460, RHRD460S MIN TYP MAX MIN TYP MAX UNITS IF = 4A - - 2.1 - - 2.1 V IF = 4A, TC = 150oC - - 1.7 - - 1.7 V VR = 400V - - 100 - - - µA VR = 600V - - - - - 100 µA VR = 400V, TC = 150oC - - 500 - - - µA VR = 600V, TC = 150oC - - - - - 500 µA IF = 1A, dIF/dt = 200A/µs - - 30 - - 30 ns IF = 4A, dIF/dt = 200A/µs - - 35 - - 35 ns ta IF = 4A, dIF/dt = 200A/µs - 16 - - 16 - ns tb IF = 4A, dIF/dt = 200A/µs - 7 - - 7 - ns QRR IF = 4A, dIF/dt = 200A/µs - 45 - - 45 - nC VR = 10V, IF = 0A - 15 - - 15 - pF 3 oC/W VF IR trr CJ RθJC - - 3 - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 500 10 IR , REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) 20 175oC 100oC 25oC 1 175oC 100 100oC 0.1 25oC 0.01 0.001 0.5 0 0.5 1 1.5 2 2.5 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE ©2002 Fairchild Semiconductor Corporation 3 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RHRD440, RHRD460, RHRD440S, RHRD460S Rev. B RHRD440, RHRD460, RHRD440S, RHRD460S Typical Performance Curves 30 (Continued) 50 TC = 25oC, dIF/dt = 200A/µs TC = 100oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 25 trr 20 15 ta 10 tb 40 trr 30 20 ta 10 tb 5 0 0.5 1 0 0.5 4 1 IF , FORWARD CURRENT (A) TC = 175oC, dIF/dt = 200A/µs 50 t, RECOVERY TIMES (ns) FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT 60 trr 40 30 ta 20 tb 10 0 0.5 4 IF , FORWARD CURRENT (A) 1 4 5 4 DC 3 SQ. WAVE 2 1 0 145 150 155 160 165 170 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 50 40 30 20 10 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE ©2002 Fairchild Semiconductor Corporation RHRD440, RHRD460, RHRD440S, RHRD460S Rev. B RHRD440, RHRD460, RHRD440S, RHRD460S Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1A L = 20mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RHRD440, RHRD460, RHRD440S, RHRD460S Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4