KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO : KSE700/701 : KSE702/703 - 60 - 80 Unit s V V VCEO Collector-Emitter Voltage : KSE700/701 : KSE702/703 - 60 - 80 V V VEBO Emitter- Base Voltage -5 V IC Collector Current -4 A IB Base Current - 0.1 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Parameter Collector- Base Voltage Value Equivalent Circuit C B R1 R2 R 1 ≅ 10 k Ω R 2 ≅ 0.6 k Ω E Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICEO Parameter Collector-Emitter Breakdown Voltage : KSE700/701 : KSE702/703 Collector Cut-off Current : KSE700/701 : KSE702/703 Test Condition IC = - 10mA, IB = 0 Min. Max. -60 -80 Units V V VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 -100 -100 µA µA Collector Cut-off Current VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 @TC = 100°C -100 -500 µA µA IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 -2 mA hFE DC Current Gain ICBO : KSE700/702 : KSE701/703 : ALL DEVICES VCE(sat) VBE(on) VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A 750 750 100 Collector-Emitter Saturation Voltage : KSE700/702 : KSE701/703 : ALL DEVICES IC = - 1.5A, IB = - 30mA IC = - 2A, IB = - 40mA IC = - 4A, IB = - 40mA -2.5 -2.8 -3 V V V Base-Emitter On Voltage : KSE700/702 : KSE701/703 : ALL DEVICES VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A -1.2 -2.5 -3 V V V ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 KSE700/701/702/703 Typical Characteristics 10k IB= -1000µ s VCE = -3V IB= -900µ s IB= -800µ s -4 00µ I B= -4 0µs 0 -3 = IB IB= -700µs IB= -600µ s µ I B= -200 IB= -500µs -3 s hFE, DC CURRENT GAIN IC[A],COLLECTOR CURRENT -5 s IB= -100µ s -2 -1 -1 -2 -3 -4 100 10 -0.01 -0 -0 1k -5 -0.1 Figure 1. Static Characteristic -10 Figure 2. DC current Gain 1000 -100 IC = 500 IB f=0.1MHZ IE=0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 IC[A], COLLECTOR CURRENT VCE(V),COLLECTOR-EMITTER VOLTAGE -10 V BE(sat) -1 V CE(sat) -0.1 -0.01 -0.1 -1 100 10 1 -0.01 -10 IC[A], COLLECTOR CURRENT -0.1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 60 -100 PC[W], POWER DISSIPATION 0 10 -10 µs 1m s 5m s D .C . IC[A], COLLECTOR CURRENT 50 -1 MJE700/701 40 30 20 10 MJE702/703 0 -0.1 -1 -10 -100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation -1000 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A2, June 2001 KSE700/701/702/703 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3