FPAB50PH60 Smart Power Module for Front-End Rectifier General Description Features FPAB50PH60 is an advanced smart power module of PFC(Power Factor Correction) that Fairchild has newly developed and designed mainly targeting mid-power application especially for an air conditioners. It combines optimized circuit protection and drive IC matched to high frequency switching IGBTs. System reliability is futher enhanced by the integrated under-voltage lock-out and over-current protection function. • Low thermal resistance due to AlN-DBC substrate • 600V-50A 2-phase IGBT PWM semi-converter including a drive IC for IGBT gate driving and protection • Typical switching frequency of 20kHz • Isolation rating of 2500Vrms/min. Applications • AC 180V ~ 264V single-phase front-end rectifier Top View Bottom View 44mm 26.8mm Fig. 1. ©2006 Fairchild Semiconductor Corporation January, 2006 FPAB50PH60 January, 2006 • PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3) Integrated Drive, Protection and System Control Functions • For IGBTs: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to a UV fault • Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Top View (1) VCC(L) (2) COM (3) NC (4) IN(R) (5) IN(S) (6) VFO (7) CFOD (8) CSC (21) VAC(22) NC N (23) NC N (9) NC (10) NC (11) NC (12) NC (13) NC (14) NC (15) NC (16) NC (17) NC (18) NC (19) RTH (24) N Case Temperature (TC) Detecting Point (25) R (26) S DBC Substrate (27) PR (20) VTH Fig. 2. ©2006 Fairchild Semiconductor Corporation January, 2006 FPAB50PH60 Integrated Power Functions FPAB50PH60 Pin Descriptions Pin Number 1 Pin Name VCC Pin Description Common Bias Voltage for IC and IGBTs Driving 2 COM Common Supply Ground 4 IN(R) Signal Input for Low-side R-phase IGBT 5 IN(S) Signal Input for Low-side S-phase IGBT 6 VFO Fault Output 7 CFOD Capacitor for Fault Output Duration Time Selection 8 CSC Capacitor (Low-pass Filter) for Over Current Detection 19 R(TH) NTC Thermistor terminal 20 V(TH) NTC Thermistor terminal 21 VAC- 24 N Negative Rail of DC–Link (IGBT) 25 R Output for R Phase 26 S Output for S Phase 27 PR Positive Rail of DC–Link 3, 9~18, 22~23 NC No Connection Negative Terminal of DC–Link (DIODE) for Sensing Internal Equivalent Circuit and Input/Output Pins (20) V TH (19) R TH NTC Therm istor (27) P R D1 D2 (8) C SC CSC (26) S (7) C FOD CFOD (25) R (6) V FO VFO (5) IN (S) IN(S) (4) IN (R) IN(R) OUT(S) Q1 D3 Q2 D4 (24) N (23) NC OUT(R) (2) COM COM (22) NC (1) VCC VCC (21) V AC- Note : 1) Converter is composed of two IGBTs including four diodes and one IC which has gate driving and protection functions. Fig. 3. ©2006 Fairchild Semiconductor Corporation January, 2006 Unless Otherwise Specified) Converter Part Supply Voltage Item Symbol Vi Condition Applied between R-S Supply Voltage (Surge) Vi(Surge) Applied between R-S 500 V VPN Applied between P- N 450 V VPN(Surge) Applied between P- N 500 V 600 V 30 A 37.5 A Output Voltage Output Voltage (Surge) Collector-emitter Voltage Rating 264 VCES Input Current (100% Load) Ii Input Current (125% Load) Ii(125%) TC < 95°C, Vi=220V, VPN= 390V, VPWM=20kHz TC < 95°C, Vi=220V, VPN= 390V, VPWM=20kHz, 1min Non-repetitive Collector Dissipation PC TC = 25°C per One IGBT Operating Junction Temperature TJ (Note 1) Unit VRMS 143 W -20 ~ 125 °C Note 1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@TC ≤ 100°C). However, to insure safe operation of the SPM, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C) Control Part Item Control Supply Voltage Symbol Condition VCC Applied between VCC - COM Input Signal Voltage VIN Applied between IN - COM Fault Output Supply Voltage VFO Applied between VFO - COM Fault Output Current IFO Sink Current at VFO Pin Current Sensing Input Voltage VSC Applied between CSC - COM Rating 20 Unit V -0.3~5.5 V -0.3~VCC+0.3 V 5 mA -0.3~VCC+0.3 V Total System Item Module Case Operation Temperature Symbol TC Storage Temperature TSTG Isolation Voltage VISO Condition Rating -20 ~ 100 60Hz, Sinusoidal, AC 1 minute, Connection Pins to DBC Unit °C -40 ~ 125 °C 2500 Vrms Thermal Resistance Item Junction to Case Thermal Resistance (Referenced to PKG center) Symbol Rθ(j-c)Q IGBT Condition Min. Typ. - Max. 0.7 Unit °C/W Rθ(j-c)HD High-side diode - - 1.5 °C/W Rθ(j-c)LD Low-side diode - - 0.85 °C/W Note : 2. For the measurement point of case temperature(TC), please refer to Fig. 2. ©2006 Fairchild Semiconductor Corporation January, 2006 FPAB50PH60 Absolute Maximum Ratings (TJ = 25°C, Converter Part Item IGBT saturation voltage Symbol VCE(sat) High-side diode voltage VFH Low-side diode voltage VFL Switching Times tON Min. - Typ. 2.8 Max. 3.2 Unit V IC = 50A - 2.1 2.7 V IC = 50A - 1.3 1.7 V VPN = 400V, VCC = 15V, IC =30A VIN = 0V ↔ 5V, Inductive Load - 550 - ns - 200 - ns (Note 3) - 430 - ns tC(OFF) - 180 - ns trr - 60 - ns Irr - 6 - A - - 250 µA tC(ON) tOFF Collector - emitter Leakage Current ICES Condition VCC =15V, VIN = 5V; IC =50A VCE = VCES Note 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Fig. 4 Control Part Item Symbol Condition Quiescent VCC Supply Cur- IQCCL VCC = 15V, IN = 0V VCC - COM rent Fault Output Voltage Min. - Typ. - Max. 26 Unit mA V VFOH VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V 0.5 0.55 V V Over Current Trip Level VOC(ref) VCC = 15V 0.45 Supply Circuit UnderVoltage Protection UVCCD Detection Level 10.7 11.9 13.0 UVCCR Reset Level 11.2 12.4 13.2 V Fault-out Pulse Width tFOD CFOD = 33nF (Note 4) 1.4 1.8 2.0 ms Applied between IN - COM 3.0 - - V - - 0.8 V @ TC = 25°C (Note Fig. 9) - 50 - kΩ @ TC = 80°C (Note Fig. 9) - 5.76 - kΩ ON Threshold Voltage VIN(ON) OFF Threshold Voltage VIN(OFF) Resistance of Thermistor RTH Note 4. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] ©2006 Fairchild Semiconductor Corporation January, 2006 FPAB50PH60 Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) FPAB50PH60 Electrical Characteristics Irr 120% of IC 100% of IC VCE IC 90% of IC 15% of VCE IC 10% of IC VCE 15% of VCE 10% of IC VIN VIN tON trr tC(OFF) tC(ON) tOFF (a) Turn-on (b) Turn-off Fig. 4. Switching Time Definition Mechanical Characteristics and Ratings Item Limits Condition Mounting Torque Mounting Screw: - M3 Device Flatness Note Fig. 5 Recommended 0.62N•m Weight Units Min. 0.51 Typ. 0.62 Max. 0.72 0 - +120 µm - 15.00 - g N•m (+) (+) (+) Fig. 5. Flatness Measurement Position ©2006 Fairchild Semiconductor Corporation January, 2006 FPAB50PH60 Time Charts of SPMs Protective Function In p u t S ig n a l In te rn a l IG B T G a te -E m itte r V o lta g e P3 C o n tro l S u p p ly V o lta g e P2 UV re s e t P5 UV d e te c t P6 P1 O u tp u t C u rr e n t P4 F a u lt O u tp u t S ig n a l P1 : Normal operation - IGBT ON and conducting current P2 : Under voltage detection P3 : IGBT gate interrupt P4 : Fault signal generation P5 : Under voltage reset P6 : Normal operation - IGBT ON and conducting current Fig. 6. Under-Voltage Protection P5 In p u t S ig n a l P6 In te r n a l IG B T G a t e - E m it te r V o lta g e O C D e t e c tio n P1 P4 P7 O u tp u t C u r r e n t P2 O C R e fe r e n c e V o lt a g e ( 0 .5 V ) S e n s in g V o lta g e R C F ilt e r D e la y F a u lt O u tp u t S ig n a l P3 P8 P1 : Normal operation - IGBT ON and conducting current P2 : Over current detection P3 : IGBT gate interrupt / Fault signal generation P4 : IGBT is slowly turned off P5 : IGBT OFF signal P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation P7 : IGBT OFF state P8 : Fault Output reset and normal operation start Fig. 7. Over Current Protection ©2006 Fairchild Semiconductor Corporation January, 2006 FPAB50PH60 V ac +5V PFCM VTH NTC Therm istor R TH C SC M icro controller C FO D V FO or IN (S) IN (R) DSP PR S CSC R CFOD Inverter VFO OUT(S) IN(S) IN(R) N OUT(R) CO M COM Rshunt VCC V AC- VCC Fig. 8. Application Example R-T Graph 120 Resistance [kΩ] 100 80 60 40 20 0 20 30 40 50 60 70 80 90 100 110 120 130 Temperature [°C] Fig. 9. R-T Curve of the Built-in Thermistor ©2006 Fairchild Semiconductor Corporation January, 2006 FPAB50PH60 Detailed Package Outline Drawings ©2006 Fairchild Semiconductor Corporation January, 2006 FPAB50PH60 Detailed Package Outline Drawings ©2006 Fairchild Semiconductor Corporation January, 2006 FPAB50PH60 Detailed Package Outline Drawings ©2006 Fairchild Semiconductor Corporation January, 2006 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18