KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol Rating Unit 60 80 V V 60 80 5 4 0.1 40 150 -55 ~ 150 V V V A A W VCBO VCEO VEBO IC IB PC TJ T STG 1. Emitter 2. Collector 3. Base °C °C ELECTRICAL CHARACTERISTICS (TC=25°C) Characteristic Collector Emitter Breakdown Voltage : KSE800/801 : KSE802/803 Collector Cutoff Current : KSE800/801 : KSE802/803 Collector Cutoff Current Symbol BVCEO Emitter Cutoff Current DC Current Gain : KSE800/802 : KSE801/803 : ALL DEVICES Collector-Emitter Saturation Voltage : KSE800/802 : KSE801/803 : ALL DEVICES Base-Emitter On Voltage : KSE800/802 : KSE801/803 : ALL DEVICES IEBO hFE Test Condition IC = 50mA, IB = 0 Min Max 60 80 Unit V V ICEO ICBO 100 100 100 500 µA µA µA µA 2 mA IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA 2.5 2.8 3 V V V VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 1.2 2.5 3 V V V VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 T C = 100°C VBE = 5V, IC = 0 VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 750 750 100 VCE(sat) VBE(on) Rev. B 1999 Fairchild Semiconductor Corporation KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.