FSAB20PH60 Smart Power Module for Partial Switching Converter Features General Description • Very low thermal resistance due to using DBC FSAB20PH60 is an advanced smart power module of PSC(Partial Switching Converter) that Fairchild has newly developed and designed mainly targeting low-power application especially for an air conditioners. It combines optimized circuit protection and drive IC matched to IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and shortcircuit protection function. • 600V-20A single-phase rectifier bridge diode including two IGBTs for partial switching converter • Integrated IC for gate driving and protection • Divided negative dc-link terminals for current sensing • Isolation rating of 2500Vrms/min. Applications • AC 187V ~ 276V single-phase partial-switching converter of air-conditioner Top View Bottom View 44mm 26.8mm Figure 1. ©2006 Fairchild Semiconductor Corporation FSAB20PH60 Rev. A 1 www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter September 2006 • 600V-20A rectifiers for single-phase ac input with IGBT switches for operation of partial switching converter Integrated Drive, Protection and System Control Functions • For IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to a UV fault (Low-side supply) • Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input • Built-in thermistor: Over-temperature monitoring Pin Configuration Top View (1) VCC (2) COM (3) NC (4) IN(R) (5) IN(S) (6) VFO (7) CFOD (8) CSC (21) ND (22) NR (23) NS (9) NC (10) NC (11) NC (12) NC (24) NC Case Temperature (TC) Detecting Point (25) R (13) NC (14) NC (15) NC (16) NC (26) S (17) NC (18) NC (19) RTH (20) VTH DBC Substrate (27) PR Figure 2. 2 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Integrated Power Functions FSAB20PH60 Smart Power Module for Partial Switching Converter Pin Descriptions Pin Number Pin Name Pin Description 1 VCC 2 COM 3 NC 4 IN(R) Signal Input for R-phase IGBT 5 IN(S) Signal Input for S-phase IGBT 6 VFO Fault Output 7 CFOD 8 CSC Capacitor (Low-pass Filter) for Short-Current Detection 9 NC Dummy Pin 10 NC Dummy Pin 11 NC Dummy Pin 12 NC Dummy Pin 13 NC Dummy Pin 14 NC Dummy Pin 15 NC Dummy Pin 16 NC Dummy Pin 17 NC Dummy Pin Common Bias Voltage for IC Common Supply Ground Dummy Pin Capacitor for Fault Output Duration Time Selection 18 NC 19 R(TH) Series Resistor for the Use of Thermistor (Temperature Detection) Dummy Pin 20 V(TH) Thermistor Bias Voltage 21 ND Negative DC–Link of Rectifier Diode 22 NR Negative DC–Link of R-phase IGBT 23 NS Negative DC–Link of S-phase IGBT 24 NC 25 R AC Input for R Phase 26 S AC Input for S Phase 27 PR Positive DC–Link Output Dummy Pin Internal Equivalent Circuit and Input/Output Pins (20) VTH (19) RTH NTC Thermistor (27) PR D1 D2 (8) CSC CSC (26) S (7) CFOD CFOD (25) R (6) VFO VFO (5) IN(S) IN(S) (4) IN(R) IN(R) (2) COM COM (1) VCC VCC OUT(S) Q1 D3 Q2 D4 (21) ND OUT(R) (23) NS (22) NR Note: The low-side is composed of two IGBTs including rectifying diodes for each IGBT and one control IC which has gate driving, current sensing and protection functions. The highside is composed of two rectifying diodes without gate driving IC. Figure 3. 3 FSAB20PH60 Rev. A www.fairchildsemi.com Unless Otherwise Specified) Converter Part Symbol Vi Vi(Surge) VPN Parameter Conditions Rating Units Applied between R-S 276 V Input Supply Voltage (Surge) Applied between R-S 500 V Output Voltage Applied between P-N 400 V Input Supply Voltage Output Voltage (Surge) Applied between P-N 500 V VCES Collector-emitter Voltage IGBT 600 V VRRM 600 V 11 ARMS 14 ARMS -20 ~ 125 °C VPN(surge) Repetitive Peak Reverse Voltage Diode Ii Input Current (100% Load) TC ≤ 90°C, VO = 280V, fPWM = 60Hz Ii Input Current (130% Load) TC ≤ 90°C, VO = 280V, fPWM = 60Hz TJ Operating Junction Temperature (Note 1) Note: 1. The maximum junction temperature rating of the power chips integrated within the module is 150 °C(@TC ≤ 100°C). However, to insure safe operation, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C) Control Part Symbol Parameter Conditions Rating Units VCC Control Supply Voltage Applied between VCC - COM 20 V VIN Input Signal Voltage Applied between IN(R), IN(S) - COM -0.3~VCC+0.3 V VFO Fault Output Supply Voltage Applied between VFO - COM -0.3~VCC+0.3 V IFO Fault Output Current Sink Current at VFO Pin 5 mA VSC Current Sensing Input Voltage Applied between CSC - COM -0.3~VCC+0.3 V Total System Symbol TC Parameter Module Case Operation Temperature TSTG Storage Temperature VISO Isolation Voltage Conditions -20°C < TJ < 125°C, See Fig.2 60Hz, Sinusoidal, AC 1 minute, Connection Pins to DBC 4 FSAB20PH60 Rev. A Rating Units -20 ~ 100 °C -40 ~ 125 °C 2500 Vrms www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Absolute Maximum Ratings (TJ = 25°C, Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Parameter Conditions Junction to Case Thermal Resistance Min. Typ. Max. Units Each IGBT under Operating Condition - - 2.8 °C/W Each Diode under Operating Condition - - 2.6 °C/W Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2. Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Main Circuit Part Symbol Item Conditions VCE(SAT) Collector-Emitter Saturation Voltage VCC = VBS =15V VIN = 5V IC = 6.5A, TJ = 25°C IC = 20A, TJ = 25°C VFM Diode Forward Voltage VIN = 0V tON Switching Times VPN = 300V, VCC = VBS = 15V IC = 6.5A VIN = 0V ↔ 5V, Inductive Load (Note 3) Min. Typ. Max. Units - 2.1 2.6 V - 1.1 1.5 V - 0.48 - µs - 0.85 - µs - 0.56 - µs tC(OFF) - 0.10 - µs trr - 1.35 - µs tC(ON) tOFF ICES IR Collector - Emitter Leakage Current VCE = VCES - - 250 µA Diode Leakage Current VR = VRRM - - 250 µA Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 100% IC 120% IC trr V CE IC IC V IN V IN tON tOFF tC(ON) V IN(ON) V CE V IN(OFF) 10% IC 90% IC 10% V CE tC(OFF) 10% V CE 10% IC Figure 4. Switching Time Definition 5 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Absolute Maximum Ratings Control Part Symbol Parameter Conditions Typ. Max. Units - - 23 mA 4.5 - - V IQCCL Quiescent VCC Supply Current VCC = 15V IN(L) = 0V VFOH Fault Output Voltage VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V VSC(ref) Short Circuit Trip Level VCC = 15V (Note 4) 0.45 0.5 0.55 V UVCCD Supply Circuit UnderVoltage Protection Detection Level 10.7 11.9 13.0 V Reset Level 11.2 12.4 13.2 V VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up VFOL UVCCR VCC(L) - COM Min. tFOD Fault-out Pulse Width CFOD = 33nF (Note 5) 1.0 1.8 - ms VIN(ON) ON Threshold Voltage Applied between IN(R), IN(S) - COM 3.0 - - V VIN(OFF) OFF Threshold Voltage RTH Resistance of Thermistor - - 0.8 V @ TC = 25°C (Note Fig. 10) - 50 - kΩ @ TC = 80°C (Note Fig. 10) - 5.76 - kΩ Note: 4. Over current protection is functioning only for the low-side IGBT. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] Recommended Operating Conditions Symbol Vi Parameter Condition Value Min. Typ. Max. Units Input Supply Voltage Applied between R - S 187 - 276 Vrms VPN Output Voltage Applied between P - N - 280 400 V VCC Control Supply Voltage Applied between VCC - COM 13.5 15 16.5 V fPWM PWM Input Signal TC ≤ 100°C, TJ ≤ 125°C, Per IGBT (Note 6) - 60 - Hz Note: 6. Regarding the switching method of FSAB20PH60, it follows the control method of the typical partial-switching power factor correction circuit as shown in Figure 5. 6 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) D2 Vac IS Cdc L o a d 1.5 Q , D 2 3 1 ON Q1 , D 4 ON Input Signal (a) 0.5 Q1 Q2 D3 D4 Rsh -0.5 0 D 1 , D4 ON D 2 , D3 ON 0 2 4 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20 16 18 20 18 20 20 IS(A) 10 (b) Input Current 0 -10 L o a d -20 0 2 IQ(A) 10 IGBT Current -20 0 20 10 ID(A) L o a d Q1 ON 0 Q2 ON -10 (c) 4 20 2 4 6 8 10 12 Diode Current D 1 ,D 4 ON 0 D2 , D 3 ON -10 -20 0 14 2 4 6 8 10 12 Time(ms) 14 16 Note: Depending on the polarity of input voltage Vac, Q1 or Q2 is turned on at the zero crossing point of input voltage, and turned off considering the output power and distortion of input current. Each IGBT turns on with zero current with the utility frequency, 50 or 60Hz. Figure 5. PWM Example of FSAB20PH60 7 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter D1 Lac Parameter Mounting Torque Heatsink Flatness Conditions Mounting Screw: M3 Recommended 0.62Nm Limits Units Min. Typ. Max. 0.51 0.62 0.72 N•m 0 - 120 um - 15.00 - g Note Fig. 6 Weight (+) (+) (+) Figure 6. Flatness Measurement Position 8 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Mechanical Characteristics and Ratings Input Signal Protection Circuit State RESET SET RESET UV CCR a1 Control Supply Voltage a6 UV CCD a2 a3 a4 a7 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Figure 7. Under-Voltage Protection 9 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Time Charts of SPMs Protective Function FSAB20PH60 Smart Power Module for Partial Switching Converter Lower arms control input c6 c7 Protection circuit state SET Internal IGBT Gate-Emitter Voltage RESET c3 c2 SC c4 c1 c8 Output Current SC Reference Voltage Sensing Voltage of the shunt resistance Fault Output Signal c5 CR circuit tim e constant delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input “L” : IGBT OFF state. c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c8 : IGBT OFF state Figure 8. Over Current Protection 10 FSAB20PH60 Rev. A www.fairchildsemi.com PSC Module 4.7kΩ IN(R) CPU IN(S) 100 Ω VFO 1nF 1nF COM Note: 1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The SPM input signal section integrates 3.3kΩ (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2. The logic input is compatible with standard CMOS or LSTTL outputs. Figure 9. Recommended CPU I/O Interface Circuit R-T Graph 120 Resistance [kΩ] 100 80 60 40 20 0 20 30 40 50 60 70 80 90 100 110 120 130 Temperature [°C] Figure 10. R-T Curve of the Built-in Thermistor 11 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter 5V-Line +5V LAC PSC Module, FSAB20PH60 VTH RTH Temperature Microcontroller or DSP RTH 0.1µF +5V CSC CFOD 4.7kΩ 100Ω VFO Fault 1nF 1nF NTC Thermistor D1 Gate S IN(R) Gate R D2 R CFOD Inverter VFO OUT(S) IN(S) Q1 D3 Q2 D4 IN(R) ND OUT(R) COM COM NR VCC Current NS VCC 100µF S CSC CFOD IN(S) PR 1µF RSH RF CSC Note: 1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2. VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please refer to Figure 9. 3. VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms (typ.)) Please refer to the note 6 for calculation method. 4. Input signal is High-Active type. There is a 3.3kΩ resistor inside the IC to pull down each input signal line to GND. When employing RC coupling circuits, set up such RC couple that input signal agree with turn-off/turn-on threshold voltage. 5. To prevent errors of the protection function, the wiring around RSC, RF and CSC should be as short as possible. 6. In the over current protection circuit, please select the RFCSC time constant in the range 3~4 µs. 7. Each capacitors should be mounted as close to the pins as possible. 8. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 9. Internal NTC thermistor can be used for monitoring the case temperature and protecting the device from the overheating operation. Please select an appropriate resistor RTH according to the application. For example, use RTH=4.7kΩ that will make the voltage across RTH to be 2.5V at 85°C of the case temperature. 10. This PSC module is not designed for the internal IGBT to be turned on when the current is flowing through the input reactor LAC. Otherwise, there will be large reverse recovery current that makes considerably large turn-on switching loss of IGBT, which may destroy the internal IGBTs. 11. Please use an appropriate shunt resistor RSH to protect the intenal IGBT from the overcurrent operation. For example, if the IGBT current has to be protected below 25A, then use 20mΩ resistor of RSH. When selecting protecting current level, please consider the variation and tolerance of external components. Moreover, the shunt resistor path from NR and NS to ND and ground that is connected to COM of the internal drive IC, should be thick and short in order to minimize the stray inductance that may generate improper switching of the module. Figure 11. Application Circuit 12 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Vac FSAB20PH60 Smart Power Module for Partial Switching Converter Detailed Package Outline Drawings 13 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Detailed Package Outline Drawings (Continued) 14 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Detailed Package Outline Drawings (Continued) 15 FSAB20PH60 Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 16 FSAB20PH60 Rev. 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