IGBT FM2G400US60 Molding Type Module General Description Fairchild Insulated Gate Bipolar Transistor (IGBT) Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, Uninterruped Power Supply (UPS) and general inverters where short-circuit ruggedness is a required feature. Features • • • • • • UL Certified No.E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 400A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-EA E1/C2 Application • • • • • C1 AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M6 Mounting Screw : M6 @ TC = 25°C @ TC = 25°C @ TC = 100°C @ TC = 25°C @ AC 1minute FM2G400US60 600 ± 20 400 800 400 800 10 1560 -40 to +150 -40 to +125 2500 2.5 2.5 Units V V A A A A us W °C °C V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation FM2G400US60 Rev. A FM2G400US60 September 2001 Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA VGE = VCE, IC = 400mA 5.0 6.0 8.5 V IC = 400A, VGE = 15V -- 2.2 2.8 V VCE = 30V, VGE = 0V, f = 1MHz ---- 66000 3600 1980 ---- pF pF pF --------------- 870 550 720 178 36 22 58 1230 580 890 190 52 24 75 ---250 --116 -------- ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ VCC = 300 V, VGE = 15V 100°C 10 -- -- us VCE = 300 V, IC = 400A, VGE = 15V ---- 1800 350 750 2700 --- nC nC nC Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ©2001 Fairchild Semiconductor Corporation VCC = 300 V, IC = 400A, RG = 1.6Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 400A, RG = 1.6Ω, VGE = 15V Inductive Load, TC = 125°C @ TC = FM2G400US60 Rev. A FM2G400US60 Electrical Characteristics of IGBT T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 400A TC = 100°C IF = 400A di / dt = 600 A/us Min. -- Typ. 1.9 Max. 2.8 -- 1.8 -- TC = 25°C -- 90 130 TC = 100°C -- 130 -- TC = 25°C -- 35 46 TC = 100°C -- 76 -- TC = 25°C -- 1575 2960 TC = 100°C -- 4940 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module ©2001 Fairchild Semiconductor Corporation Typ. --0.04 -- Max. 0.08 0.18 -400 Units °C/W °C/W °C/W g FM2G400US60 Rev. A FM2G400US60 Electrical Characteristics of DIODE T Ic [A ] 12V 11V 15V Tc = 25℃ 600 V GE = 1 0V 400 200 CURRENT 20V 600 C O LLEC TO R C O L L E C T O R C U R R E N T Ic [A ] 13V 400 125℃ 200 C o m m o n E m itte r Vge = 15V C o m m o n E m itte r T c = 25℃ 0 0 0 2 4 6 8 0 10 Fig 1. Typical Output Characteristics 800 13 12 800 3 4 VO LTAG E 5 V C E [V ] C o m m o n E m it t e r V ce = 5V 11 15 2 Fig 2. Typical Saturation Voltage Characteristics I c [A ] 20 1 C O L L E C T O R - E M IT T E R C O L L E C T O R - E M IT T E R V O L T A G E V C E [V ] 600 C O LLEC TO R C U R R EN T C O L L E C T O R C U R R E N T Ic [A ] FM2G400US60 800 800 V G E = 10 V 400 200 600 Tc = 25℃ 125℃ 400 200 C o m m o n E m itte r Tc = 125℃ 0 0 2 4 6 8 0 10 0 C O L L E C T O R -E M IT T E R V O L T A G E V C E [V ] Fig 3. Typical Output Characteristics 12 16 VO LTAG E 20 V G E [V ] 16 C o m m o n E m it t e r Tc = 125℃ V O L T[ V A ]G E V C o m m o n E m itt e r T c = 25℃ CE 12 C O L L E C T O R - E M IT T E R CE 8 Fig 4. Collector Current vs. Gate-Emitter Voltage 16 C O L L E C T O R - E M IT T E R V O L T A[VG] E V 4 G A T E -E M IT T E R 8 800 4 400 Ic = 1 6 0 A 0 12 8 800 4 400 Ic = 1 6 0 A 0 0 4 8 G A T E - E M IT T E R 12 16 V O L T A G E V G E [V ] Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation 20 0 4 8 G A T E -E M IT T E R 12 VO LTAG E 16 20 V G E [V ] Fig 6. Saturation Voltage vs. VGE FM2G400US60 Rev. A on n S W I T C H IN G T IM, Et [ ㎲ t ] C ie s C A P A C IT A N C E C [p F ] FM2G400US60 C o m m o n E m itte r V cc = 300V Vge = ± 15V Ic = 4 0 0 A 100000 10000 C oes t d (o n) 1 tr C re s C o m m o n E m itte r V ge = 0V f = 1M hz Tc = 25℃ : Tc = 25℃ : Tc = 125℃ 1000 0 .3 1 10 C O L L E C T O R - E M IT T E R 30 1 10 V O L T A G E V C E [V ] G A T E R E S IS T A N C E Fig 7. Capacitance Characteristics R g [Ω ] Fig 8. Turn-On Characteristics vs. Gate Resistance 100 Vcc = 300V Ic = 4 0 0 A Esw t d(o ff) E N E R G Y [m J ] S W IT C H IN G T IMo ffE, tft [㎲ ] 80 1 60 Eon 40 E o ff tf 20 0 .1 C o m m o n E m itte r Vcc = 300V Vge = ± 15V Ic = 4 0 0 A : T c = 25℃ : T c = 125℃ 0 0 .0 5 1 0 10 G A T E R E S IS T A N C E R G [Ω 10 G A T E - E M IT T E R Fig 9. Turn-Off Characteristics vs. Gate Resistance 15 R E S IS T A N C E 20 R g [Ω ] Fig 10. Switching Loss vs. Gate Resistance C o m m o n E m itte r Vcc = 300V Vge = ± 15V R g = 1 .6 Ω S W IT C H IN G T IM E , tt [㎲ ] 1 1 t d (o ff) f t d(o n) d (o f f) S W IT C H IN G T IM d(on) E t, tr [㎲ ] 5 ] 0.1 tr C om m on E m itte r V c c = 30 0V V g e = ± 1 5V R g = 1 .6Ω 0 .1 0.0 1 30 100 C O L L E C T O R C U R R E N T Ic [A ] Fig 11. Turn-On Characteristics vs. Collector Current ©2001 Fairchild Semiconductor Corporation tf : T c = 2 5℃ : T c = 1 25℃ 400 : T c = 25℃ : T c = 125℃ 0 .0 5 40 100 400 C O L L E C T O R C U R R E N T Ic [A ] Fig 12. Turn-Off Characteristics vs. Collector Current FM2G400US60 Rev. A Eon 40 E o ff 20 Common Emitter RL = 0.75Ω Tc = 25℃ 14 300 12 10 200 8 6 100 4 2 0 0 0 100 200 300 0 0 400 500 1000 1500 CHARGE QG [nC] C O L L E C T O R - E M IT T E R C U R R E N T Ic [A ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 1 1000 50㎲ 300 100㎲ Ic M A X . (C o n tin u ou s ) 1m s 100 D C O p e ra tio n 30 T h e r m a l R e s p o n s e [Z t h jc ] [ ℃ /W ] Tc = 25℃ Ic M A X . (P u lse d ) C O LLE C T O R C U R R E N T Ic [A ] GATE-EMITTER VOLTAGE V GE [V] COLLECTOR-EMITTER VOLTAGE V CE [V] Esw 60 E N E R G Y [m J ] 16 400 Vcc = 300V R g = 1 .6 Ω Tc = 125℃ 0 .5 0 .1 0 .2 D I O D E S ta g e 0 .1 0 .0 5 0 .0 1 0 .0 2 0 .0 1 10 s in g le p u ls e 1 E -3 3 3 E -4 0 .3 3 1 10 30 100 300 10 1000 -5 10 C O L L E C T O R -E M IT T E R V O L T A G E V C E [V ] -4 10 -3 10 -2 10 -1 10 0 10 1 0 10 1 R e c t a n g u la r P u ls e D u r a t io n [ s e c ] Fig 15. SOA Characteristics Fig 16. Transient Thermal Impedance 1 Tc = 25℃ T h e r m a l R e s p o n s e [Z t h jc ] [ ℃ /W ] 10 0 0 C O LL E C T O R C U R R E N T Ic [A ] T j ≤ 1 25 ℃ Vge = ± 15V R g = 1 .6 Ω 80 0 60 0 40 0 0 .1 0 .5 IG B T S t a g e 0 .2 0 .0 1 0 .1 0 .0 5 0 .0 2 0 .0 1 1 E -3 20 0 s in g le p u ls e 1 E -4 0 0 10 0 20 0 30 0 40 0 50 0 60 0 C O LL E C T O R -E M IT T E R V O L T A G E V CE [V ] Fig 17. RBSOA Characteristics ©2001 Fairchild Semiconductor Corporation 70 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 R e c t a n g u la r P u ls e D u r a t io n [ s e c ] Fig 18. Transient Thermal Impedance FM2G400US60 Rev. A FM2G400US60 80 T r r [x 1 0 n s ] R E C O V E R Y C U R R E N T Irr REVERSE 200 PEAK FORW ARD 400 R E C O V E R Y T IM E 125℃ REVERSE T c = 25℃ 600 F C U R R E [A NT ] I C o m m o n C a th o d e V ge = 0V 100 Irr C o m m o n C a th o d e d i/ d t = - 8 0 0 A / ㎲ 50 30 T rr 10 : Tc = 25℃ : Tc = 125℃ 5 0 0 1 FORW ARD 2 VO LTAG E 3 V F [V ] Fig 19. Forward Characteristics ©2001 Fairchild Semiconductor Corporation 4 0 100 FO RW ARD 200 300 CURRENT 400 IF [A ] Fig 20. Reverse Recovery Characteristics FM2G400US60 Rev. A FM2G400US60 800 FM2G400US60 Package Dimension 7PM-EA Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation FM2G400US60 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4