UniFETTM FDA28N50 N-Channel MOSFET 500V, 28A, 0.155Ω Features Description • RDS(on) = 0.122Ω ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 80nC) • Low Crss ( Typ. 42pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D G G DS TO-3PN S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) Units V ±30 V 28 -Continuous (TC = 100oC) - Pulsed Ratings 500 A 17 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 28 A EAR Repetitive Avalanche Energy (Note 1) 31 mJ dv/dt Peak Diode Recovery dv/dt 5 V/ns 112 A (Note 2) 2391 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) - Derate above 25oC 310 W 2.5 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.4 RθCS Thermal Resistance, Case to Sink Typ. 0.24 RθJA Thermal Resistance, Junction to Ambient ©2008 Fairchild Semiconductor Corporation FDA28N50 Rev. A Units o C/W 40 1 www.fairchildsemi.com FDA28N50 N-Channel MOSFET August 2008 Device Marking FDA28N50 Device FDA28N50 Package TO-3PN Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V ID = 250μA, Referenced to 25oC - 0.59 - V/oC Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VDS = 500V, VGS = 0V - - 1 VDS = 400V, TC = 125oC - - 10 VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.122 0.155 Ω - 34 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 14A gFS Forward Transconductance VDS = 20V, ID = 14A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 28A VGS = 10V (Note 4, 5) - 3866 5140 pF - 576 766 pF - 42 63 pF - 80 105 nC - 21 - nC - 32 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 28A RG = 25Ω (Note 4, 5) - 56 122 ns - 126 262 ns - 210 430 ns - 110 230 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 28 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 112 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 28A - - 1.4 V trr Reverse Recovery Time - 530 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 28A dIF/dt = 100A/μs - 8 - μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.1mH, IAS = 28A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 28A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA28N50 Rev. A 2 www.fairchildsemi.com FDA28N50 N-Channel MOSFET Package Marking and Ordering Information FDA28N50 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 200 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 100 ID,Drain Current[A] ID,Drain Current[A] 100 10 o 150 C o -55 C 10 o 25 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 1 0.2 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 10 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.25 200 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 100 0.20 VGS = 10V 0.15 VGS = 20V o 150 C *Notes: 1. VGS = 0V o 0.10 *Note: TJ = 25 C 0 25 50 75 ID, Drain Current [A] 1 0.2 100 Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 6000 Ciss 4000 2. 250μs Pulse Test 0.6 1.0 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] 8000 o 25 C 10 *Note: 1. VGS = 0V 2. f = 1MHz Coss 2000 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 FDA28N50 Rev. A 0 1 10 VDS, Drain-Source Voltage [V] 30 3 *Note: ID = 28A 0 20 40 60 Qg, Total Gate Charge [nC] 80 90 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 14A 0.5 0.0 -75 175 Figure 9. Maximum Safe Operating Area -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 10. Maximum Drain Current vs. Case Temperature 28 300 60μs 100 100μs 1ms ID, Drain Current [A] ID, Drain Current [A] 2.5 10ms 10 DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 21 14 7 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.02 *Notes: o 0.01 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 -5 10 FDA28N50 Rev. A t2 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FDA28N50 N-Channel MOSFET Typical Performance Characteristics (Continued) FDA28N50 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA28N50 Rev. A 5 www.fairchildsemi.com FDA28N50 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDA28N50 Rev. A 6 www.fairchildsemi.com FDA28N50 N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA28N50 Rev. A 7 www.fairchildsemi.com Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® tm The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 FDA28N50 Rev. A 8 www.fairchildsemi.com FDA28N50 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.