PD- 91503C
IRFP150N
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 100V
RDS(on) = 0.036W
G
Description
ID = 42A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
42
30
140
160
1.1
± 20
420
22
16
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RqJC
RqCS
RqJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.24
–––
0.95
–––
40
°C/W
1
IRFP150N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
2.0
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
56
45
40
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
5.0
LS
Internal Source Inductance
–––
13
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1900
450
230
V(BR)DSS
DV(BR)DSS/DTJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.036
W
VGS = 10V, ID = 23A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 22A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
110
ID = 22A
15
nC VDS = 80V
58
VGS = 10V, See Fig. 6 and 13
–––
VDD = 50V
–––
ID = 22A
ns
–––
RG = 3.6W
–––
RD = 2.9W, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
42
––– –––
showing the
A
G
integral reverse
––– ––– 140
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS =23A, VGS = 0V
––– 180 270
ns
TJ = 25°C, IF = 22A
––– 1.2 1.8
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 1.7mH
Pulse width £ 300µs; duty cycle £ 2%.
Uses IRF1310N data and test conditions
RG = 25W , IAS = 22A. (See Figure 12)
ISD £ 22A, di/dt £ 180A/µs, VDD £ V(BR)DSS,
TJ £ 175°C
2
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IRFP150N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
10
4.5V
20us PULSE WIDTH
TJ = 25 oC
1
0.1
1
10
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 25 o C
TJ = 175 o C
10
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
3.0
5.0
1
VDS , Drain-to-Source Voltage (V)
1000
1
4.0
20us PULSE WIDTH
TJ = 175 o C
1
0.1
Fig 1. Typical Output Characteristics
100
4.5V
10
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
ID = 36A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (o C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFP150N
VGS =
Ciss =
Crss =
Coss =
C, Capacitance (pF)
3000
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
2500
Ciss
2000
1500
Coss
1000
Crss
500
20
VGS , Gate-to-Source Voltage (V)
3500
0
1
10
ID = 22A
VDS = 80V
VDS = 50V
VDS = 20V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
60
80
100
120
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
40
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
100
10us
100
10
100us
10
1ms
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
1.6
10ms
TC = 25 o C
TJ = 175 o C
Single Pulse
1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFP150N
50
RD
VDS
VGS
I D , Drain Current (A)
40
D.U.T.
RG
+
-VDD
30
10V
Pulse Width £1 µs
Duty Factor £ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.1
P DM
0.10
t1
0.05
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP150N
15V
L
VDS
D R IVE R
D .U .T
RG
+
V
- DD
IA S
20V
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
1000
ID
9.0A
16A
BOTTOM 22A
TOP
800
600
400
200
0
25
V (B R )D S S
50
75
100
125
150
175
Starting TJ , Junction Temperature o( C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
+
V
- DS
10 V
QGS
D.U.T.
QGD
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFP150N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
Current Transformer
+
-
-
+
RG
·
·
·
·
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP150N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
-D -
3.65 (.143)
3.55 (.140)
15.90 (.626)
15.30 (.602)
-B-
0.25 (.010) M
D B M
-A5.50 (.217)
20.30 (.800)
19.70 (.775)
2X
1
2
NOTES:
5.50 (.217)
4.50 (.177)
1 D IM E N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982.
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO JE D E C O U TLIN E
T O -247-A C .
3
-C -
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
4.30 (.170)
3.70 (.145)
0.80 (.031)
3X 0.40 (.016)
1.40 (.056)
3X 1.00 (.039)
0.25 (.010) M
2.60 (.102)
2.20 (.087)
C A S
3.40 (.133)
3.00 (.118)
LE A D A S S IG N M E N TS
1
2
3
4
-
G A TE
D R A IN
SOURCE
D R A IN
Part Marking Information
TO-247AC
E X A M P L E : TH IS IS A N IR F P E 3 0
W ITH A S S E M B L Y
LOT CODE 3A1Q
A
IN TE R N A TIO N A L
R E C T IF IE R
LOGO
PART NUMBER
IR F P E 3 0
3A 1 Q 9 3 0 2
ASSEMBLY
LOT CODE
D A TE C O D E
(Y YW W )
YY = YEAR
W W W EEK
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http://www.irf.com/
Data and specifications subject to change without notice. 10/98
8
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