FAIRCHILD 2N7051

2N7051
2N7051
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at
collector currents to 1.0A and high breakdown voltage.
• Sourced from Process 06.
• See 2N7052 for Characteristics.
TO-92
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
VCEO
Collector-Emitter Voltage
Parameter
Ratings
100
Units
V
VCBO
VEBO
Collector-Base Voltage
100
V
Emitter-Base Voltage
12
V
IC
Collector Current
1.5
A
TJ, TSTG
Storage Temperature
-55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These rtings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCEO
Collector-Emitter Breakdown Voltage *
IC = 1.0mA, IB = 0
100
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100µA, IB = 0
100
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 1.0mA, IC = 0
12
ICBO
Collector Cut-off Current
VCB = 80V, IE = 0
VCE = 80V, IE = 0
0.2
µA
Emitter Cut-off Current
VEB = 7.0V, IC = 0
0.1
µA
ICES
IEBO
V
µA
0.1
On Characteristics *
hFE
DC Current Gain
VCE = 5.0V, IC = 100mA
VCE = 5.0V, IC = 1.0A
VCE (sat)
Collector-Emitter Saturation Voltage
IC = 100mA, IB = 0.1mA
1.5
V
VBE (sat)
Base-Emitter Saturation Voltage
IC = 100mA, VBE =5.0V
2.0
V
10,000
1,000
20,000
Small Signal Characteristics
fT
Transition Frequency
IC = 100mA, VCE =5.0V
200
hfe
Small Signal Current Gain
VCE =5.0V, IC = 100mA,
f = 20MHz
10
MHz
100
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
Symbol
PD
Total Device Dissipation
Derate above 25°C
Parameter
Max.
625
5.0
Units
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
2N7051
Thermal Characteristics TA=25°C unless otherwise noted
2N7051
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1