2N4400 MMBT4400 C E C TO-92 BE B SOT-23 Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.0 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units 2N4400 625 5.0 83.3 *MMBT4400 350 2.8 200 357 mW mW/°C °C/W °C/W 2N4400 / MMBT4400 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 µA, I C = 0 6.0 ICEX Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA IBL Emitter Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA V ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 150 mA VCE = 2.0 V, IC = 500 mA IC = 150 mA, I B =15 mA IC = 500 mA, I B = 50 mA IC = 150 mA, I B =15 mA IC = 500 mA, I B = 50 mA 20 40 50 20 0.75 150 0.40 0.75 0.95 1.2 V V V V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 5.0 V, f = 140 kHz 6.5 pF Cib Input Capacitance VEB = 0.5 V, f = 140 kHz 30 pF hfe Small-Signal Current Gain 2.0 hfe Small-Signal Current Gain IC = 20 mA, VCE = 10 V, f = 100 MHz VCE = 10 V, IC = 1.0 mA, hie Input Impedance f = 1.0 kHz 0.5 7.5 KΩ hre Voltage Feedback Ratio 0.1 8.0 hoe Output Admittance 1.0 30 x 10 µmhos 15 ns ns 20 250 -4 SWITCHING CHARACTERISTICS td Delay Time tr Rise Time I B1 = 15 mA ,VBE ( off ) = 0.0 V 20 ts Storage Time VCC = 30 V, IC = 150 mA 225 ns tf Fall Time I B1 = IB2 = 15 mA 30 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% VCC = 30 V, IC = 150 mA, 2N4400 / MMBT4400 NPN General Purpose Amplifier