SSH10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V TO-3P Low RDS(ON) : 0.646 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Drain-to-Source Voltage o ID 10 6.3 VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt TL V Continuous Drain Current (TC=100 oC ) Drain Current-Pulsed TJ , TSTG Units 600 Continuous Drain Current (TC=25 C ) IDM PD Value A 1 O 40 + _ 30 A O 1 O 1 O O3 545 mJ 10 A 2 V 19.3 mJ 3.0 V/ns Total Power Dissipation (TC=25oC ) 193 W Linear Derating Factor 1.54 W/ oC Operating Junction and - 55 to +150 Storage Temperature Range o Maximum Lead Temp. for Soldering C 300 Purposes, 1/8 “ from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. R θJC Junction-to-Case -- 0.65 R θCS Case-to-Sink 0.24 -- Junction-to-Ambient -- 40 R θJA Units o C /W Rev. B ©1999 Fairchild Semiconductor Corporation N-CHANNEL POWER MOSFET SSH10N60A Electrical Characteristics (TC=25oC unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆BV/∆TJ Breakdown Voltage Temp. Coeff. VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units Gate Threshold Voltage 600 -- -- -- 0.66 -- 2.0 -- 4.0 VDS=5V,ID=250 µA VGS=30V -- -- 100 -- -- -100 -- -- 25 -- -- 250 -- -- 0.8 Ω VGS=10V,ID=5A 4 O 8.5 -- Ω VDS=50V,ID=5A 4 O Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -- Ciss Input Capacitance -- 1750 2270 Coss Output Capacitance -- 190 220 Crss Reverse Transfer Capacitance -- 78 90 td(on) Turn-On Delay Time -- 20 50 Rise Time -- 23 55 Turn-Off Delay Time -- 85 180 Fall Time -- 30 70 Qg Total Gate Charge -- 74 95 Qgs Gate-Source Charge -- 12 -- Qgd Gate-Drain( “Miller “) Charge -- 35.4 -- tf V See Fig 7 Gate-Source Leakage , Reverse Forward Transconductance td(off) VGS=0V,ID=250µ A V/ oC ID=250 µ A Gate-Source Leakage , Forward gfs tr V Test Condition nA µA pF VGS=-30V VDS=600V o VDS=480V,TC=125 C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=300V,ID=10A, ns RG=6.2 Ω See Fig 13 4 O 5 O VDS=480V,VGS=10V, nC ID=10A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- ISM Pulsed-Source Current 1 O -- -- 40 VSD Diode Forward Voltage O -- -- 1.4 V TJ=25oC,IS=10A,VGS=0V trr Reverse Recovery Time -- 440 -- ns TJ=25oC,IF=10A Qrr Reverse Recovery Charge -- 4.7 -- µC diF/dt=100A/µ s 4 10 A Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O o 2 L=10mH, I =10A, V =50V, R =27Ω, Starting T =25 C O AS DD G J o O3 ISD <_10A, di/dt <_150A/ µs, VDD <_BVDSS , Starting T J =25 C _ 2% 4 Pulse Test : Pulse Width = 250 µs, Duty Cycle < O Essentially Independent of Operating Temperature 5 O Integral reverse pn-diode in the MOSFET 4 O N-CHANNEL POWER MOSFET SSH10N60A Fig 1. Output Characteristics Fig 2. Transfer Characteristics ID , Drain Current [A] 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 101 ID , Drain Current [A] VGS Top : 100 @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 10-1 10-1 100 101 150 oC 100 @ Notes : 1. VGS = 0 V 25 oC 10-1 101 2 4 6 8 10 VGS , Gate-Source Voltage [V] [A] VDS , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage 2.0 IDR , Reverse Drain Current RDS(on) , [Ω ] Drain-Source On-Resistance 2. VDS = 50 V 3. 250 µs Pulse Test - 55 oC 1.5 VGS = 10 V 1.0 VGS = 20 V 0.5 @ Note : TJ = 25 oC 10 20 30 100 40 @ Notes : 1. VGS = 0 V 150 oC 2. 250 µs Pulse Test 25 oC 10-1 0.2 0.0 0 101 ID , Drain Current [A] 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd [V] Crss= Cgd VGS , Gate-Source Voltage Capacitance [pF] 3000 C iss 2000 1000 00 10 C oss @ Notes : 1. VGS = 0 V C rss 2. f = 1 MHz 101 VDS , Drain-Source Voltage [V] VDS = 120 V 10 VDS = 300 V VDS = 480 V 5 @ Notes : ID = 10.0 A 0 0 20 40 60 QG , Total Gate Charge [nC] 80 N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage SSH10N60A @ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.8 -75 -50 -25 0 25 50 75 100 125 150 3.0 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 0.5 2. ID = 5.0 A 0.0 -75 175 -50 -25 0 25 50 75 100 125 150 175 TJ , Junction Temperature [ oC] TJ , Junction Temperature [ oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature [A] Operation in This Area is Limited by R DS(on) 100 µs ID , Drain Current 10 10 µs 1 ms 101 10 ms DC 100 @ Notes : 1. TC = 25 oC 10-1 100 101 8 6 4 2 2. TJ = 150 oC 3. Single Pulse 102 0 25 103 50 75 100 Tc , Case Temperature [ oC] VDS , Drain-Source Voltage [V] Fig 11. Thermal Response Thermal Response 100 ZθJC(t) , ID , Drain Current [A] 12 102 D=0.5 @ Notes : 1. Zθ J C (t)=0.65 0.2 10- 1 0.1 PDM 0.02 t1 single pulse t2 10- 2 10- 5 Max. 3. TJ M -TC =PD M *Zθ J C (t) 0.05 0.01 o C/W 2. Duty Factor, D=t1 /t2 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 [sec] 101 125 150 N-CHANNEL POWER MOSFET SSH10N60A Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” 50K 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (IG) Resistor Charge Current Sampling (ID) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET SSH10N60A Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” 50K 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (IG) Resistor Charge Current Sampling (ID) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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