SSS5N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.824 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Drain-to-Source Voltage Ο ID Continuous Drain Current (TC=25 C) 800 V A 1.9 Drain Current-Pulsed VGS Gate-to-Source Voltage 1 O EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt 2 O 1 O 1 O 3 O Ο TJ , TSTG Units 3 Ο Continuous Drain Current (TC=100 C) IDM PD Value Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and 20 + _ 30 A 336 mJ V 3 A 4.5 mJ 2.0 V/ns 45 W 0.36 W/ C Ο - 55 to +150 Storage Temperature Range Ο TL Maximum Lead Temp. for Soldering C 300 Purposes, 1/8“ from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. R¥èJC Junction-to-Case -- 2.78 R¥èJA Junction-to-Ambient -- 62.5 Units ¡É/W Rev. B ©1999 Fairchild Semiconductor Corporation N-CHANNEL POWER MOSFET SSS5N80A Electrical Characteristics (TC=25 Ο Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆BV/∆TJ Breakdown Voltage Temp. Coeff. VGS(th) IGSS IDSS RDS(on) C unless otherwise specified) Min. Typ. Max. Units 800 -- -- See Fig 7 -- 2.0 -- 3.5 Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 25 -- -- 250 -- -- 2.2 Ω VGS=10V,ID=2A 4* O -- Ω VDS=50V,ID=2A 4 O Gate Threshold Voltage Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -- 2.92 Ciss Input Capacitance -- 1100 1430 Coss Output Capacitance -- 110 130 Crss Reverse Transfer Capacitance -- 46 55 td(on) Turn-On Delay Time -- 21 50 Rise Time -- 40 90 Turn-Off Delay Time -- 91 190 Fall Time -- 32 75 Qg Total Gate Charge -- 52 68 Qgs Gate-Source Charge -- 8.9 -- Qgd Gate-Drain(“Miller”) Charge -- 24.7 -- tf Ο 0.97 Forward Transconductance td(off) VGS=0V,ID=250µA V/ C ID=250µA -- gfs tr V Test Condition V nA µA pF VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=700V Ο VDS=560V,TC=125 C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=350V,ID=6A, ns RG=11.5§Ù See Fig 13 4 O 5 O VDS=560V,VGS=10V, nC ID=6A 4 O 5 See Fig 6 & Fig 12 O Source-Drain Diode Ratings and Characteristics Symbol Characteristic IS Continuous Source Current ISM Pulsed-Source Current VSD Diode Forward Voltage trr Qrr Min. Typ. Max. Units Test Condition -- -- -- -- 20 -- -- 1.4 V TJ=25 C ,IS=3A,VGS=0V Reverse Recovery Time -- 470 -- ns TJ=25 C ,IF=5A Reverse Recovery Charge -- 4.96 -- µC diF/dt=100A/µs 1 O 4 O 3 A Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 L=70mH, I AS=3A, V DD=50V, R G=27Ω, Starting T J =25 C O O3 ISD <_ 5A, di/dt <_130A/ µs, VDD <_BVDSS , Starting T J =25 C 4 Pulse Test : Pulse Width = 250 µs, Duty Cycle _ <2% O Essentially Independent of Operating Temperature 5 O Ο Ο Integral reverse pn-diode in the MOSFET Ο Ο 4 O N-CHANNEL POWER MOSFET SSS5N80A Fig 1. Output Characteristics Fig 2. Transfer Characteristics Top : 15V 10V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 100 -1 10 ID , Drain Current [A] ID , Drain Current [A] V GS 101 @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 101 150 oC 100 25 oC @ Notes : 1. VGS = 0 V 2. VDS = 50 V - 55 oC 3. 250 µs Pulse Test -1 10-1 100 10 101 2 4 [A] Fig 3. On-Resistance vs. Drain Current 8 10 Fig 4. Source-Drain Diode Forward Voltage 8 IDR , Reverse Drain Current RDS(on) , [Ω ] Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] 6 VGS = 10 V 4 VGS = 20 V 2 @ Note : TJ = 25 oC 4 8 12 16 100 20 @ Notes : 1. VGS = 0 V 150 oC 25 oC 10-1 0.2 0 0 101 0.4 ID , Drain Current [A] 0.6 2. 250 µs Pulse Test 0.8 1.0 1.2 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage C iss Coss= Cds+ Cgd 1200 800 C oss @ Notes : 1. VGS = 0 V C rss 2. f = 1 MHz 400 0 100 VDS = 160 V 10 Crss= Cgd 101 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage Capacitance [pF] Ciss= Cgs+ Cgd ( Cds= shorted ) [V] 1600 VDS = 400 V VDS = 640 V 5 @ Notes : ID = 5.0 A 0 0 10 20 30 40 QG , Total Gate Charge [nC] 50 60 N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage SSS5N80A @ Notes : 1. VGS = 0 V 3.0 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 0.5 2. ID = 250 µA 0.8 -75 -50 -25 0 25 50 75 100 125 150 2. ID = 2.5 A 0.0 -75 175 -50 -25 0 25 50 75 100 125 150 175 TJ , Junction Temperature [ oC] TJ , Junction Temperature [ oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature [A] 101 100 µs 1 ms ID , Drain Current Operation in This Area is Limited by R DS(on) 10 µs 10 ms 100 ms 100 DC @ Notes : 1. TC = 25 oC 10-1 3 2 1 2. TJ = 150 oC 3. Single Pulse 101 102 0 25 103 50 75 100 Tc , Case Temperature [ oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response D=0.5 100 0.2 @ Notes : 1. Zθ J C (t)=2.78 0.1 0.05 o C/W Max. 2. Duty Factor, D=t1 /t2 10- 1 3. TJ M -TC =PD M *Zθ J C (t) 0.02 0.01 PDM t1 single pulse θ 10-2 Z JC(t) , ID , Drain Current [A] 4 102 t2 -2 10 10- 5 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 [sec] 101 125 150 N-CHANNEL POWER MOSFET SSS5N80A Fig 12. Gate Charge Test Circuit & Waveform * Current Regulator * 50K¥Ø 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (I G) Resistor Charge Current Sampling (I D) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated V DS ) RG DUT Vin 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET SSS5N80A Fig 12. Gate Charge Test Circuit & Waveform * Current Regulator * 50K¥Ø 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (I G) Resistor Charge Current Sampling (I D) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated V DS ) RG DUT Vin 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET SSS5N80A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by “RG• • IS controlled by Duty Factor “D” Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.