KSC5039 KSC5039 High Voltage Power Switch Switching Application TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V 400 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A 10 A ICP Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG 3 A 70 W Junction Temperature 150 °C Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 800 BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 BVEBO Emitter-Base Breakdown Voltage IC = 1mA, IC=0 7 ICBO Collector Cut-off Current VCB = 500V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 10 µA hFE * DC Current Gain VCE = 5V, IC = 0.3A VCE(sat) * Collector-Emitter Saturation Voltage IC = 2.5A, IB = 0.5A 1.5 V VBE(sat) * Base-Emitter Saturation Voltage IC = 2.5A, IB = 0.5A 2.0 fT Current Gain Bandwidth Product VCE = 5V, IC = 0.1A 10 40 Cob Output Capacitance VCB = 10V , f = 1MHz tON Turn ON Time tSTG Storage Time tF Fall Time VCC =150V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 60Ω Typ. Max. Units V V 10 V MHz pF 1 µs 3 µs 0.8 µs * Plus test: PW=300µs, Duty Cycle=2% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5039 Typical Characteristics 2.0 1.6 VCE = 5V 1.4 1.2 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1000 IB = 200mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 180mA 1.8 IB = 60mA 1.0 IB = 40mA 0.8 IB = 20mA 0.6 0.4 100 10 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 0.01 5.0 0.1 Figure 1. Static Characteristic Figure 2. DC current Gain 10 6.0 IC = 5 I B VCE = 5V 5.5 5.0 1 0.1 IC[A], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE V BE(sat) V CE(sat) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.01 0.01 0.1 1 0.0 0.0 10 0.1 IC[A], COLLECTOR CURRENT f = 1MHz IE = 0 100 10 1 10 100 VCB [V], COLLECTOR BASE VOLTAGE Figure 5. Collector Output Capacitance ©2000 Fairchild Semiconductor International 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1000 Figure 4. Base-Emitte On Voltage fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT 1000 1 0.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage COB(pF), CAPACITANCE 1 100 VCE = 10V fREF = 10MHz 10 1 0.1 0.01 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A, February 2000 KSC5039 Typical Characteristics (Continued) 100 10 0.1 1 0.1 0.01 0.01 0.1 1 1 10 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 7. Switching Time Figure 8. Safe Operating Area 40 100 L=200uH IB2 = -1A 35 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT s tF IC(max)(DC) 0µ 1 50µ s IC(max).(Pulse) 10 10 tSTG, tF [µs], TIME tSTG s 1m s 10m IC[A], COLLECTOR CURRENT VCC = 150V IC = 5IB1 = -5IB2 10 1 0.1 30 25 20 15 10 5 0 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 9. Reverse Bias Safe Operaing Area ©2000 Fairchild Semiconductor International 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 10. Power Derating Rev. A, February 2000 KSC5039 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E