M TC7660 Charge Pump DC-to-DC Voltage Converter Features Package Types • • • • • Wide Input Voltage Range: +1.5V to +10V Efficient Voltage Conversion (99.9%, typ) Excellent Power Efficiency (98%, typ) Low Power Consumption: 80 µA (typ) @ VIN = 5V Low Cost and Easy to Use - Only Two External Capacitors Required • Available in 8-Pin Small Outline (SOIC), 8-Pin PDIP and 8-Pin CERDIP Packages • Improved ESD Protection (3 kV HBM) • No External Diode Required for High-Voltage Operation Applications • • • • RS-232 Negative Power Supply Simple Conversion of +5V to ±5V Supplies Voltage Multiplication VOUT = ± n V+ Negative Supplies for Data Acquisition Systems and Instrumentation PDIP/CERDIP/SOIC NC 1 CAP+ 2 GND 3 CAP - 4 TC7660 8 V+ 7 OSC 6 LOW VOLTAGE (LV) 5 VOUT General Description The TC7660 is a pin-compatible replacement for the industry standard 7660 charge pump voltage converter. It converts a +1.5V to +10V input to a corresponding -1.5V to -10V output using only two low cost capacitors, eliminating inductors and their associated cost, size and electromagnetic interference (EMI). The on-board oscillator operates at a nominal frequency of 10 kHz. Operation below 10 kHz (for lower supply current applications) is possible by connecting an external capacitor from OSC to ground. The TC7660 is available in 8-Pin PDIP, 8-Pin Small Outline (SOIC) and 8-Pin CERDIP packages in commercial and extended temperature ranges. Functional Block Diagram V+ CAP+ 8 OSC LV 7 RC Oscillator ÷2 2 Voltage Level Translator 4 CAP- 6 5 VOUT Internal Internal Voltage Voltage Regulator Regulator Logic Network TC7660 3 GND 2002 Microchip Technology Inc. DS21465B-page 1 TC7660 1.0 ELECTRICAL CHARACTERISTICS * Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings* Supply Voltage .............................................................+10.5V LV and OSC Inputs Voltage: (Note 1) .............................................. -0.3V to VSS for V+ < 5.5V .....................................(V+ – 5.5V) to (V+) for V+ > 5.5V Current into LV ......................................... 20 µA for V+ > 3.5V Output Short Duration (VSUPPLY ≤ 5.5V)...............Continuous Package Power Dissipation: (TA ≤ 70°C) 8-Pin CERDIP ....................................................800 mW 8-Pin PDIP .........................................................730 mW 8-Pin SOIC .........................................................470 mW Operating Temperature Range: C Suffix.......................................................0°C to +70°C I Suffix .....................................................-25°C to +85°C E Suffix ....................................................-40°C to +85°C M Suffix .................................................-55°C to +125°C Storage Temperature Range.........................-65°C to +160°C ESD protection on all pins (HBM) ................... ..............≥ 3 kV Maximum Junction Temperature ........... ....................... 150°C C1 10 µF + 1 8 2 7 3 TC7660 4 IS V+ (+5V) IL COSC 6 RL 5 VOUT C2 + 10 µF FIGURE 1-1: TC7660 Test Circuit. ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise noted, specifications measured over operating temperature range with V+ = 5V, COSC = 0, refer to test circuit in Figure 1-1. Parameters Supply Current Supply Voltage Range, High Supply Voltage Range, Low Output Source Resistance Sym Min Typ Max Units I+ — 80 180 µA V+H Conditions RL = ∞ 3.0 — 10 V V+ L Min ≤ TA ≤ Max, R L = 10 kΩ, LV Open 1.5 — 3.5 V Min ≤ TA ≤ Max, R L = 10 kΩ, LV to GND ROUT — 70 100 Ω IOUT=20 mA, TA = +25°C IOUT=20 mA, TA ≤ +70°C (C Device) — — 120 — — 130 IOUT=20 mA, TA ≤ +85°C (E and I Device) — 104 150 IOUT=20 mA, TA ≤ +125°C (M Device) — 150 300 V + = 2V, IOUT = 3 mA, LV to GND 0°C ≤ TA ≤ +70°C — 160 600 V + = 2V, IOUT = 3 mA, LV to GND -55°C ≤ TA ≤ +125°C (M Device) Oscillator Frequency fOSC — 10 — kHz Pin 7 open Power Efficiency PEFF 95 98 — % RL = 5 kΩ VOUTEFF 97 99.9 — % RL = ∞ ZOSC — 1.0 — MΩ V+ = 2V — 100 — kΩ V + = 5V Voltage Conversion Efficiency Oscillator Impedance + Note 1: Destructive latch-up may occur if voltages greater than V or less than GND are supplied to any input pin. DS21465B-page 2 2002 Microchip Technology Inc. TC7660 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, C1 = C2 = 10 µF, ESRC1 = ESRC2 = 1 Ω, TA = 25°C. See Figure 1-1. POWER CONVERSION EFFICIENCY (%) 12 SUPPLY VOLTAGE (V) 10 8 6 SUPPLY VOLTAGE RANGE 4 2 0 -55 -25 0 +25 +50 +75 +100 +125 TEMPERATURE (°C) FIGURE 2-1: Temperature. Operating Voltage vs. OUTPUT SOURCE RESISTANCE (Ω) OUTPUT SOURCE RESISTANCE (Ω) IOUT = 1 mA 96 94 92 IOUT = 15 mA 90 88 86 84 82 V+ = +5V 80 100 1k OSCILLATOR FREQUENCY (Hz) 10k 500 1k 100Ω 10Ω 0 1 2 3 4 5 6 SUPPLY VOLTAGE (V) 7 10k 200 150 V + = +2V 100 OSCILLATOR FREQUENCY (kHz) 100 10 10k FIGURE 2-3: Frequency of Oscillation vs. Oscillator Capacitance. V + = +5V 50 20 1k 2002 Microchip Technology Inc. 400 -25 0 +25 +50 +75 +100 +125 TEMPERATURE (°C) FIGURE 2-5: vs. Temperature. V+ = +5V 10 100 1000 OSCILLATOR CAPACITANCE (pF) IOUT = 1 mA 450 0 -55 8 FIGURE 2-2: Output Source Resistance vs. Supply Voltage. OSCILLATOR FREQUENCY (Hz) 98 FIGURE 2-4: Power Conversion Efficiency vs. Oscillator Frequency. 10k 1 100 Output Source Resistance V+ = +5V 18 16 14 12 10 8 6 -55 -25 0 +25 +50 +75 +100 +125 TEMPERATURE (°C) FIGURE 2-6: Unloaded Oscillator Frequency vs. Temperature. DS21465B-page 3 TC7660 0 5 -1 4 -2 3 OUTPUT VOLTAGE (V) -3 -4 -5 -6 -7 -8 0 -1 -2 -3 SLOPE 55Ω LV OPEN -10 -5 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) FIGURE 2-7: Current. 0 Output Voltage vs. Output 20 V+ = 2V 90 18 80 16 70 14 60 12 50 10 40 8 30 6 20 4 10 2 0 0 9.0 1.5 3.0 4.5 6.0 7.5 LOAD CURRENT (mA) SUPPLY CURRENT (mA) 100 FIGURE 2-8: Supply Current and Power Conversion Efficiency vs. Load Current. 2 10 FIGURE 2-10: Current. POWER CONVERSION EFFICIENCY (%) 0 POWER CONVERSION EFFICIENCY (%) 2 1 -4 -9 OUTPUT VOLTAGE (V) V+ = +5V 20 30 40 50 60 LOAD CURRENT (mA) 70 80 Output Voltage vs. Load 100 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 SUPPLY CURRENT (mA) OUTPUT VOLTAGE (V) Note: Unless otherwise indicated, C1 = C 2 = 10 µF, ESR C1 = ESR C2 = 1 Ω, TA = 25°C. See Figure 1-1. 10 V+ = +5V 0 0 10 20 30 40 50 LOAD CURRENT (mA) 60 FIGURE 2-11: Supply Current and Power Conversion Efficiency vs. Load Current. V+ = +2V 1 0 -1 SLOPE 150Ω -2 0 FIGURE 2-9: Current. DS21465B-page 4 1 2 3 4 5 6 LOAD CURRENT (mA) 7 8 Output Voltage vs. Load 2002 Microchip Technology Inc. TC7660 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: 3.1 PIN FUNCTION TABLE Pin No. Symbol 1 NC 2 CAP+ Charge pump capacitor positive terminal 3 GND Ground terminal 4 CAP - Charge pump capacitor negative terminal 5 VOUT Output voltage 6 LV 7 OSC 8 V+ Description No connection Low voltage pin. Connect to GND for V+ < 3.5V Oscillator control input. Bypass with an external capacitor to slow the oscillator Power supply positive voltage input Charge Pump Capacitor (CAP+) Positive connection for the charge pump capacitor, or flying capacitor, used to transfer charge from the input source to the output. In the voltage-inverting configuration, the charge pump capacitor is charged to the input voltage during the first half of the switching cycle. During the second half of the switching cycle, the charge pump capacitor is inverted and charge is transferred to the output capacitor and load. It is recommended that a low ESR (equivalent series resistance) capacitor be used. Additionally, larger values will lower the output resistance. 3.2 Ground (GND) Input and output zero volt reference. 3.3 Charge Pump Capacitor (CAP-) Negative connection for the charge pump capacitor, or flying capacitor, used to transfer charge from the input to the output. Proper orientation is imperative when using a polarized capacitor. 3.4 3.5 Low Voltage Pin (LV) The low voltage pin ensures proper operation of the internal oscillator for input voltages below 3.5V. The low voltage pin should be connected to ground (GND) for input voltages below 3.5V. Otherwise, the low voltage pin should be allowed to float. 3.6 Oscillator Control Input (OSC) The oscillator control input can be utilized to slow down or speed up the operation of the TC7660. Refer to Section 5.4, “Changing the TC7660 Oscillator Frequency”, for details on altering the oscillator frequency. 3.7 Power Supply (V+) Positive power supply input voltage connection. It is recommended that a low ESR (equivalent series resistance) capacitor be used to bypass the power supply input to ground (GND). Output Voltage (VOUT) Negative connection for the charge pump output capacitor. In the voltage-inverting configuration, the charge pump output capacitor supplies the output load during the first half of the switching cycle. During the second half of the switching cycle, charge is restored to the charge pump output capacitor. It is recommended that a low ESR (equivalent series resistance) capacitor be used. Additionally, larger values will lower the output ripple. 2002 Microchip Technology Inc. DS21465B-page 5 TC7660 4.0 DETAILED DESCRIPTION 4.1 Theory of Operation 1 R O UT = ----------------------------- + 8R SW + 4ESR C1 + ESR C2 f PU MP × C1 The TC7660 charge pump converter inverts the voltage applied to the V + pin. The conversion consists of a twophase operation (Figure 4-1). During the first phase, switches S2 and S 4 are open and switches S1 and S3 are closed. C1 charges to the voltage applied to the V + pin, with the load current being supplied from C2. During the second phase, switches S2 and S4 are closed and switches S1 and S3 are open. Charge is transferred from C1 to C2, with the load current being supplied from C 1. V+ S1 EQUATION Where: f OSC f PU MP = ----------2 R SW = on-resistance of the switches ESR C1 = equivalent series resistance of C 1 ESR C2 = equivalent series resistance of C 2 4.2 Switched Capacitor Inverter Power Losses S2 + GND S 3 The overall power loss of a switched capacitor inverter is affected by four factors: C1 S4 1. C2 Losses from power consumed by the internal oscillator, switch drive, etc. These losses will vary with input voltage, temperature and oscillator frequency. Conduction losses in the non-ideal switches. Losses due to the non-ideal nature of the external capacitors. Losses that occur during charge transfer from C1 to C 2 when a voltage difference between the capacitors exists. + VOUT = -VIN 2. 3. 4. FIGURE 4-1: Inverter. Ideal Switched Capacitor In this manner, the TC7660 performs a voltage inversion, but does not provide regulation. The average output voltage will drop in a linear manner with respect to load current. The equivalent circuit of the charge pump inverter can be modeled as an ideal voltage source in series with a resistor, as shown in Figure 4-2. Figure 4-3 depicts the non-ideal elements associated with the switched capacitor inverter power loss. RSW V+ + - ROUT IDD C1 RSW + ESRC1 VOUT - S1 RSW S3 S2 C2 + ESRC2 RSW IOUT LOAD S4 V+ + FIGURE 4-2: Switched Capacitor Inverter Equivalent Circuit Model. The value of the series resistor (R OUT) is a function of the switching frequency, capacitance and equivalent series resistance (ESR) of C 1 and C2 and the on-resistance of switches S1, S2, S3 and S4. A close approximation for ROUT is given in the following equation: DS21465B-page 6 FIGURE 4-3: Non-Ideal Switched Capacitor Inverter. The power loss is calculated using the following equation: EQUATION 2 P LO SS = I O UT × R OUT + I DD × V + 2002 Microchip Technology Inc. TC7660 5.0 APPLICATIONS INFORMATION 5.2 5.1 Simple Negative Voltage Converter To reduce the value of ROUT, multiple TC7660 voltage converters can be connected in parallel (Figure 5-2). The output resistance will be reduced by approximately a factor of n, where n is the number of devices connected in parallel. Figure 5-1 shows typical connections to provide a negative supply where a positive supply is available. A similar scheme may be employed for supply voltages anywhere in the operating range of +1.5V to +10V, keeping in mind that pin 6 (LV) is tied to the supply negative (GND) only for supply voltages below 3.5V. EQUATION R O UT ( of TC7660 ) R O UT = --------------------------------------------------n ( number of devices ) While each device requires its own pump capacitor (C1), all devices may share one reservoir capacitor (C2). To preserve ripple performance, the value of C2 should be scaled according to the number of devices connected in parallel. V+ 1 C1 10 µF 2 + 3 8 7 TC7660 VOUT* C2 + 10 µF 6 4 5 5.3 Cascading Devices A larger negative multiplication of the initial supply voltage can be obtained by cascading multiple TC7660 devices. The output voltage and the output resistance will both increase by approximately a factor of n, where n is the number of devices cascaded. * VOUT = -V+ for 1.5V ≤ V+ ≤ 10V FIGURE 5-1: Paralleling Devices Simple Negative Converter. The output characteristics of the circuit in Figure 5-1 are those of a nearly ideal voltage source in series with a 70Ω resistor. Thus, for a load current of -10 mA and a supply voltage of +5V, the output voltage would be -4.3V. EQUATION + V O UT = – n ( V ) R O UT = n × R OUT ( of TC7660 ) V+ 8 1 C1 2 + 3 TC7660 4 “1” 1 7 6 C1 5 + 2 3 4 8 TC7660 “n” RL 7 6 5 + FIGURE 5-2: C2 Paralleling Devices Lowers Output Impedance. V+ 8 1 10 µF + 2 3 TC7660 4 “1” 7 6 5 10 µF + 2 3 4 * VOUT = -n FIGURE 5-3: V+ 8 1 + TC7660 “n” 10 µF 7 6 VOUT * 5 + 10 µF for 1.5V ≤ V+ ≤ 10V Increased Output Voltage By Cascading Devices. 2002 Microchip Technology Inc. DS21465B-page 7 TC7660 5.4 Changing the TC7660 Oscillator Frequency The operating frequency of the TC7660 can be changed in order to optimize the system performance. The frequency can be increased by over-driving the OSC input (Figure 5-4). Any CMOS logic gate can be utilized in conjunction with a 1 kΩ series resistor. The resistor is required to prevent device latch-up. While TTL level signals can be utilized, an additional 10 kΩ pull-up resistor to V+ is required. Transitions occur on the rising edge of the clock input. The resultant output voltage ripple frequency is one half the clock input. Higher clock frequencies allow for the use of smaller pump and reservoir capacitors for a given output voltage ripple and droop. Additionally, this allows the TC7660 to be synchronized to an external clock, eliminating undesirable beat frequencies. At light loads, lowering the oscillator frequency can increase the efficiency of the TC7660 (Figure 5-5). By lowering the oscillator frequency, the switching losses are reduced. Refer to Figure 2-3 to determine the typical operating frequency based on the value of the external capacitor. At lower operating frequencies, it may be necessary to increase the values of the pump and reservoir capacitors in order to maintain the desired output voltage ripple and output impedance. V+ 1 10 µF 2 + 3 4 8 TC7660 “1” 7 1 kΩ VOUT 10 µF V+ C1 + 7 3 TC7660 4 COSC 6 VOUT 5 + FIGURE 5-5: Frequency. DS21465B-page 8 where: VF1 is the forward voltage drop of diode D1 and VF2 is the forward voltage drop of diode D2. V+ 1 2 8 TC7660 4 External Clocking. 2 + V OUT = 2 × V – ( V F1 + V F2 ) C2 FIGURE 5-6: 5.6 7 6 5 CMOS GATE 5 8 EQUATION 3 6 1 Positive Voltage Multiplication Positive voltage multiplication can be obtained by employing two external diodes (Figure 5-6). Refer to the theory of operation of the TC7660 (Section 4.1). During the half cycle when switch S2 is closed, capacitor C 1 of Figure 5-6 is charged up to a voltage of V+ - VF1, where V F1 is the forward voltage drop of diode D 1. During the next half cycle, switch S1 is closed, shifting the reference of capacitor C1 from GND to V+. The energy in capacitor C1 is transferred to capacitor C2 through diode D2, producing an output voltage of approximately: V+ + FIGURE 5-4: 5.5 D1 + D2 C1 VOUT = (2 V+) - (2 VF) + C2 Positive Voltage Multiplier. Combined Negative Voltage Conversion and Positive Supply Multiplication Simultaneous voltage inversion and positive voltage multiplication can be obtained (Figure 5-7). Capacitors C 1 and C3 perform the voltage inversion, while capacitors C 2 and C4, plus the two diodes, perform the positive voltage multiplication. Capacitors C1 and C2 are the pump capacitors, while capacitors C3 and C 4 are the reservoir capacitors for their respective functions. Both functions utilize the same switches of the TC7660. As a result, if either output is loaded, both outputs will drop towards GND. Lowering Oscillator 2002 Microchip Technology Inc. TC7660 V+ 2 3 + C1 VOUT = -V+ 8 1 TC7660 4 7 D1 6 + C3 VOUT = D2 (2 V+) - (2 VF ) 5 + + C2 C4 FIGURE 5-7: Combined Negative Converter And Positive Multiplier. 5.7 Efficient Positive Voltage Multiplication/Conversion Since the switches that allow the charge pumping operation are bidirectional, the charge transfer can be performed backwards as easily as forwards. Figure 5-8 shows a TC7660 transforming -5V to +5V (or +5V to +10V, etc.). The only problem here is that the internal clock and switch-drive section will not operate until some positive voltage has been generated. An initial inefficient pump, as shown in Figure 5-7, could be used to start this circuit up, after which it will bypass the other (D1 and D2 in Figure 5-7 would never turn on), or else the diode and resistor shown dotted in Figure 5-8 can be used to "force" the internal regulator on. VOUT = -V - C1 10 µF + 1 8 2 7 3 4 TC7660 + 1 MΩ 10 µF 6 5 V - input FIGURE 5-8: Conversion. Positive Voltage 2002 Microchip Technology Inc. DS21465B-page 9 TC7660 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 8-Lead PDIP (300 mil) XXXXXXXX XXXXXNNN YYWW TC7660 CPA061 0221 8-Lead CERDIP (300 mil) XXXXXXXX XXXXXNNN YYWW XXXXXXXX XXXXYYWW NNN Note: * XX...X YY WW NNN Example: TC7660 MJA061 0221 8-Lead SOIC (150 mil) Legend: Example: Example: TC7660 COA0221 061 Customer specific information* Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. Standard marking consists of Microchip part number, year code, week code, traceability code (facility code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please check with your Microchip Sales Office. DS21465B-page 10 2002 Microchip Technology Inc. TC7660 8-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A2 A L c A1 β B1 p eB B Units Dimension Limits n p Number of Pins Pitch Top to Seating Plane Molded Package Thickness Base to Seating Plane Shoulder to Shoulder Width Molded Package Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D L c § B1 B eB α β MIN .140 .115 .015 .300 .240 .360 .125 .008 .045 .014 .310 5 5 INCHES* NOM MAX 8 .100 .155 .130 .170 .145 .313 .250 .373 .130 .012 .058 .018 .370 10 10 .325 .260 .385 .135 .015 .070 .022 .430 15 15 MILLIMETERS NOM 8 2.54 3.56 3.94 2.92 3.30 0.38 7.62 7.94 6.10 6.35 9.14 9.46 3.18 3.30 0.20 0.29 1.14 1.46 0.36 0.46 7.87 9.40 5 10 5 10 MIN MAX 4.32 3.68 8.26 6.60 9.78 3.43 0.38 1.78 0.56 10.92 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018 2002 Microchip Technology Inc. DS21465B-page 11 TC7660 8-Lead Ceramic Dual In-line – 300 mil (CERDIP) Packaging diagram not available at this time. DS21465B-page 12 2002 Microchip Technology Inc. TC7660 8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC) E E1 p D 2 B n 1 h α 45° c A2 A φ β L Units Dimension Limits n p Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Chamfer Distance Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D h L φ c B α β MIN .053 .052 .004 .228 .146 .189 .010 .019 0 .008 .013 0 0 A1 INCHES* NOM 8 .050 .061 .056 .007 .237 .154 .193 .015 .025 4 .009 .017 12 12 MAX .069 .061 .010 .244 .157 .197 .020 .030 8 .010 .020 15 15 MILLIMETERS NOM 8 1.27 1.35 1.55 1.32 1.42 0.10 0.18 5.79 6.02 3.71 3.91 4.80 4.90 0.25 0.38 0.48 0.62 0 4 0.20 0.23 0.33 0.42 0 12 0 12 MIN MAX 1.75 1.55 0.25 6.20 3.99 5.00 0.51 0.76 8 0.25 0.51 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057 2002 Microchip Technology Inc. DS21465B-page 13 TC7660 NOTES: DS21465B-page 14 2002 Microchip Technology Inc. TC7660 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X /XX Temperature Range Package Examples: a) b) c) Device: TC7660: DC-to-DC Voltage Converter d) Temperature Range: C E I M = = = = 0°C to +70°C -40°C to +85°C -25°C to +85°C (CERDIP only) -55°C to +125°C (CERDIP only) e) f) g) Package: PA JA OA OA713 = = = = Plastic DIP, (300 mil body), 8-lead Ceramic DIP, (300 mil body), 8-lead SOIC (Narrow), 8-lead SOIC (Narrow), 8-lead (Tape and Reel) h) TC7660COA: Commercial Temp., SOIC package. TC7660COA713:Tape and Reel, Commercial Temp., SOIC package. TC7660CPA: Commercial Temp., PDIP package. TC7660EOA: Extended Temp., SOIC package. TC7660EOA713: Tape and Reel, Extended Temp., SOIC package. TC7660EPA: Extended Temp., PDIP package. TC7660IJA: Industrial Temp., CERDIP package TC7660MJA: Military Temp., CERDIP package. Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2002 Microchip Technology Inc. DS21465B-page15 TC7660 NOTES: DS21465B-page 16 2002 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, K EELOQ, MPLAB, PIC, PICmicro, PICSTART and PRO MATE are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro ® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified. 2002 Microchip Technology Inc. DS21465B - page 17 M WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC Corporate Office Australia 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Rocky Mountain China - Beijing 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-4338 Atlanta 3780 Mansell Road, Suite 130 Alpharetta, GA 30022 Tel: 770-640-0034 Fax: 770-640-0307 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075 Dallas 4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 Kokomo 2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338 San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401-2402, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599 China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521 China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 China - Shenzhen Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 15-16, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-82350361 Fax: 86-755-82366086 China - Hong Kong SAR Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 India Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 Japan Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan Microchip Technology (Barbados) Inc., Taiwan Branch 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 EUROPE Austria Microchip Technology Austria GmbH Durisolstrasse 2 A-4600 Wels Austria Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 France Microchip Technology SARL Parc d’Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany Microchip Technology GmbH Steinheilstrasse 10 D-85737 Ismaning, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 United Kingdom Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 11/15/02 DS21465B-page 18 2002 Microchip Technology Inc.