MICROCHIP TC1015

TC1014/TC1015/TC1185
50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown
and Reference Bypass
Features:
General Description
• Low Supply Current (50 µA, typical)
• Low Dropout Voltage
• Choice of 50 mA (TC1014), 100 mA (TC1015)
and 150 mA (TC1185) Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Overcurrent and Overtemperature Protection
• Space-Saving 5-Pin SOT-23 Package
• Pin-Compatible Upgrades for Bipolar Regulators
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
The TC1014/TC1015/TC1185 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
Low Dropout Regulators (LDOs) such as the LP2980.
Designed specifically for battery-operated systems, the
devices’ CMOS construction eliminates wasted ground
current, significantly extending battery life. Total supply
current is typically 50 µA at full load (20 to 60 times
lower than in bipolar regulators).
Applications:
•
•
•
•
•
•
•
Battery-Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulator for SMPS
Pagers
VIN
2
3
VIN
VOUT
5-Pin SOT-23
5
VOUT
Bypass
5
4
VOUT
+
TC1014
TC1015
TC1185
TC1014
TC1015
TC1185
1 µF
GND
SHDN
The TC1014/TC1015/TC1185 are stable with an output
capacitor of only 1 µF and have a maximum output
current of 50 mA, 100 mA and 150 mA, respectively.
For higher output current regulators, please see the
TC1107 (DS21356), TC1108 (DS21357), TC1173
(DS21362) (IOUT = 300 mA) data sheets.
Package Type
Typical Application
1
The devices’ key features include ultra low-noise
operation (plus optional Bypass input), fast response to
step changes in load, and very low dropout voltage,
typically 85 mV (TC1014), 180 mV (TC1015), and
270 mV (TC1185) at full-load. Supply current is
reduced to 0.5 µA (max) and VOUT falls to zero when
the shutdown input is low. The devices incorporate both
overtemperature and overcurrent protection.
1
Bypass
VIN
4
2
3
GND SHDN
470 pF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
© 2007 Microchip Technology Inc.
DS21335E-page 1
TC1014/TC1015/TC1185
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 7)
Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature..........................-65°C to +150°C
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Input Operating Voltage
Maximum Output Current
Symbol
Min
Typ
Max
Units
VIN
2.7
—
6.0
V
IOUTMAX
50
100
150
—
—
—
—
—
—
mA
Device
Test Conditions
—
Note 1
TC1014
TC1015
TC1185
VOUT
VR – 2.5%
VR ±0.5%
VR + 2.5%
V
—
Note 2
VOUT Temperature Coefficient
TCVOUT
—
—
20
40
—
—
ppm/°C
—
Note 3
Line Regulation
ΔVOUT/
ΔVIN
—
0.05
0c.35
%
—
(VR + 1V) ≤ VIN ≤ 6V
Load Regulation
ΔVOUT/
VOUT
—
—
0.5
0.5
2
3
%
TC1014; TC1015
TC1185
IL = 0.1 mA to IOUTMAX
IL = 0.1 mA to IOUTMAX
(Note 4)
Dropout Voltage
VIN-VOUT
—
—
—
—
—
2
65
85
180
270
—
—
120
250
400
mV
—
—
—
TC1015; TC1185
TC1185
IL = 100 µA
IL = 20 mA
IL = 50 mA
IL = 100 mA
IL = 150 mA (Note 5)
Output Voltage
IIN
—
50
80
µA
—
SHDN = VIH, IL = 0
IINSD
—
0.05
0.5
µA
—
SHDN = 0V
PSRR
—
64
—
dB
—
FRE ≤ 1 kHz
Output Short Circuit Current
IOUTSC
—
300
450
mA
—
VOUT = 0V
Thermal Regulation
ΔVOUT/
ΔPD
—
0.04
—
V/W
—
Notes 6, 7
TSD
—
160
—
°C
—
ΔTSD
—
10
—
°C
—
Supply Current (Note 8)
Shutdown Supply Current
Power Supply Rejection
Ratio
Thermal Shutdown Die
Temperature
Thermal Shutdown
Hysteresis
Note
1:
2:
3:
The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT.
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC VOUT = (VOUTMAX – VOUTMIN)x 106
VOUT x ΔT
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
Apply for Junction Temperatures of -40°C to +85°C.
5:
6:
7:
8:
DS21335E-page 2
© 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Min
Typ
Max
Units
Device
Output Noise
Parameter
eN
—
600
—
nV/√Hz
—
IL = IOUTMAX,
F = 10 kHz
470 pF from Bypass
to GND
SHDN Input High Threshold
VIH
45
—
—
%VIN
—
VIN = 2.5V to 6.5V
SHDN Input Low Threshold
VIL
—
—
15
%VIN
—
VIN = 2.5V to 6.5V
Note
Test Conditions
1:
2:
3:
The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT.
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC VOUT = (VOUTMAX – VOUTMIN)x 106
VOUT x ΔT
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
Apply for Junction Temperatures of -40°C to +85°C.
5:
6:
7:
8:
TEMPERATURE CHARACTERISTICS
Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Extended Temperature Range
TA
-40
—
+125
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
θJA
—
256
—
°C/W
Conditions
Temperature Ranges:
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23
© 2007 Microchip Technology Inc.
DS21335E-page 3
TC1014/TC1015/TC1185
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Dropout Voltage vs. Temperature
Dropout Voltage vs. Temperature
0.100
0.020
0.016
0.090
DROPOUT VOLTAGE (V)
DROPOUT VOLTAGE (V)
0.018
VOUT = 3.3V
ILOAD = 10mA
0.014
0.012
0.010
0.008
0.006
0.004
0.002
CIN = 1µF
COUT = 1µF
0.080
0.070
0.060
0.050
0.040
0.030
0.020
0.010
0.000
0.000
-40
-20
FIGURE 2-1:
Temperature.
0
20
50
TEMPERATURE (°C)
70
125
Dropout Voltage vs.
VOUT = 3.3V
ILOAD = 50mA
CIN = 1µF
COUT = 1µF
-40
FIGURE 2-4:
Temperature.
Dropout Voltage vs. Temperature
0.140
0.120
0.100
0.080
0.060
0.040
0.020
0.000
CIN = 1µF
COUT = 1µF
-40
FIGURE 2-2:
Temperature.
-20
70
Dropout Voltage vs.
Dropout Voltage vs.
60
50
40
30
20
CIN = 1µF
COUT = 1µF
10
0.5 11 1.5
1.5 22 2.5
2.5 33 3.5
3.5 44 4.5
4.5 55 5.5
5.5 66 6.5
6.5 77 7.5
7.5
00 0.5
VIN (V)
FIGURE 2-3:
Voltage (VIN).
DS21335E-page 4
0.200
0.150
0.100
0.050
CIN = 1µF
COUT = 1µF
FIGURE 2-5:
Temperature.
Ground Current vs. Input
-20
0
20
50
TEMPERATURE (°C)
70
125
Dropout Voltage vs.
Ground Current vs. VIN
90
VOUT = 3.3V
ILOAD = 100mA
80
GND CURRENT (µA)
70
VOUT = 3.3V
ILOAD = 150mA
-40
VOUT = 3.3V
ILOAD = 10mA
80
0.250
125
Ground Current vs. VIN
GND CURRENT (µA)
125
0.000
0
20
50
TEMPERATURE (°C)
90
0
70
0.300
VOUT = 3.3V
ILOAD = 100mA
DROPOUT VOLTAGE (V)
DROPOUT VOLTAGE (V)
0.160
0
20
50
TEMPERATURE (°C)
Dropout Voltage vs. Temperature
0.200
0.180
-20
70
60
50
40
30
20
CIN = 1µF
COUT = 1µF
10
0
1.5 2 2.5 3 3.5
0 0.5 11 1.5
3.5 44 4.5 55 5.5
5.5 6 6.5 7 7.5
7.5
VIN (V)
FIGURE 2-6:
Voltage (VIN).
Ground Current vs. Input
© 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Ground Current vs. VIN
VOUT vs. VIN
80
3.5
VOUT = 3.3V
ILOAD = 150mA
3
60
VOUT = 3.3V
ILOAD = 0
2.5
50
VOUT (V)
GND CURRENT (µA)
70
40
2
1.5
30
1
20
0
0
1.5 2 2.5 3 3.5
3.5 44 4.5 55 5.5
0 0.5
0.5 11 1.5
5.5 66 6.5
6.5 77
0 0.5 1 1.5 2 2.5
2.5 3 3.5
3.5 4 4.5
4.5 5 5.5
5.5 6 6.5
6.5 77 7.5
VIN (V)
FIGURE 2-7:
Voltage (VIN).
Ground Current vs. Input
VIN (V)
FIGURE 2-10:
Output Voltage (VOUT) vs.
Input Voltage (VIN).
Output Voltage vs. Temperature
VOUT vs. VIN
3.320
3.5
OUT == 3.3V
IVLOAD
100mA
ILOAD = 100mA
3.0
CIN = 1µF
COUT = 1µF
0.5
CIN = 1µF
COUT = 1µF
10
3.315
VOUT = 3.3V
ILOAD = 10mA
3.310
3.305
VOUT (V)
VOUT (V)
2.5
2.0
1.5
3.300
3.295
3.290
1.0
3.285
0.5
0.0
CIN = 1µF
COUT = 1µF
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VIN (V)
FIGURE 2-8:
Output Voltage (VOUT) vs.
Input Voltage (VIN).
3.280
3.275
-40
CIN = 1µF
COUT = 1µF
VIN = 4.3V
-20
FIGURE 2-11:
Temperature.
-10
0
20
40
TEMPERATURE (°C)
85
125
Output Voltage (VOUT) vs.
Output Voltage vs. Temperature
3.290
3.288
VOUT = 3.3V
ILOAD = 150mA
VOUT (V)
3.286
3.284
3.282
3.280
3.278
3.276
3.274
CIN = 1µF
COUT = 1µF
VIN = 4.3V
-40
FIGURE 2-9:
Temperature.
-20
-10
0
20
40
TEMPERATURE (°C)
85
125
Output Voltage (VOUT) vs.
© 2007 Microchip Technology Inc.
DS21335E-page 5
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Output Voltage vs. Temperature
Output Voltage vs. Temperature
4.994
5.025
5.020
VOUT = 5V
ILOAD = 10mA
4.992
4.990
4.988
5.010
VOUT (V)
VOUT (V)
5.015
5.005
5.000
4.995
4.990
4.985
VOUT = 5V
ILOAD = 150mA
4.986
4.984
4.982
4.980
4.978
CIN = 1µF
COUT = 1µF
VIN = 6V
CIN = 1µF
COUT = 1µF
VIN = 6V
4.976
4.974
-40
-20
-10
0
20
40
85
125
-40
-20
-10
0
20
40
TEMPERATURE (°C)
TEMPERATURE (°C)
Output Voltage (VOUT) vs.
Temperature vs. Quiescent Current
Temperature vs. Quiescent Current
70
80
VOUT = 5V
ILOAD = 10mA
70
GND CURRENT (μA)
GND CURRENT (µA)
60
50
40
30
20
10
0
CIN = 1µF
COUT = 1µF
VIN = 6V
-40
-20
FIGURE 2-13:
85
40
30
20
-20
-10
0
20
40
TEMPERATURE (°C)
FIGURE 2-15:
RLOAD = 50Ω
COUT = 1μF
CIN = 1μF
CBYP = 0
-40
COUT ESR (Ω)
100
1
-45
Stable Region
125
Power Supply Rejection Ratio
-30
-35
COUT = 1μF
to 10μF
10
85
IGND vs. Temperature.
Stability Region vs. Load Current
1000
1.0
CIN = 1μF
COUT = 1μF
VIN = 6V
-40
125
Output Noise vs. Frequency
NOISE (μV/√Hz)
50
0
-10
0
20
40
TEMPERATURE (°C)
VOUT = 5V
ILOAD = 150mA
60
10
IGND vs. Temperature.
10.0
125
Output Voltage (VOUT) vs.
FIGURE 2-14:
Temperature.
PSRR (dB)
FIGURE 2-12:
Temperature.
85
-50
IOUT = 10mA
VINDC = 4V
VINAC = 100mVp-p
VOUT = 3V
CIN = 0
COUT = 1μF
-55
-60
-65
0.1
-70
0.1
-75
0.0
0.01K 0.1K
0.01
1K
10K 100K 1000K
FREQUENCY (Hz)
FIGURE 2-16:
DS21335E-page 6
0 10 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
-80
0.01K 0.1K
1K
10K 100K 1000K
FREQUENCY (Hz)
AC Characteristics.
© 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Measure Rise Time of 3.3V LDO With Bypass Capacitor
Measure Rise Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 448μS
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 184μS
VSHDN
VSHDN
VOUT
VOUT
FIGURE 2-17:
Measure Rise Time of 3.3V
with Bypass Capacitor.
FIGURE 2-19:
Measure Rise Time of 3.3V
without Bypass Capacitor.
Measure Fall Time of 3.3V LDO With Bypass Capacitor
Measure Fall Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA
VIN = 4.3V, Temp = 25°C, Fall Time = 100μS
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Fall Time = 52μS
VSHDN
VSHDN
VOUT
VOUT
FIGURE 2-18:
Measure Fall Time of 3.3V
with Bypass Capacitor.
© 2007 Microchip Technology Inc.
FIGURE 2-20:
Measure Fall Time of 3.3V
without Bypass Capacitor.
DS21335E-page 7
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Measure Rise Time of 5.0V LDO With Bypass Capacitor
Measure Rise Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 390μS
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 192μS
VSHDN
VSHDN
VOUT
VOUT
FIGURE 2-21:
Measure Rise Time of 5.0V
with Bypass Capacitor.
FIGURE 2-23:
Measure Rise Time of 5.0V
without Bypass Capacitor.
Measure Fall Time of 5.0V LDO With Bypass Capacitor
Measure Fall Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA
VIN = 6V, Temp = 25°C, Fall Time = 167μS
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Fall Time = 88μS
VSHDN
VSHDN
VOUT
VOUT
FIGURE 2-22:
Measure Fall Time of 5.0V
with Bypass Capacitor.
DS21335E-page 8
FIGURE 2-24:
Measure Fall Time of 5.0V
without Bypass Capacitor.
© 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Load Regulation of 3.3V LDO
Load Regulation of 3.3V LDO
Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled
ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled
ILOAD
ILOAD
VOUT
VOUT
FIGURE 2-25:
LDO.
Load Regulation of 3.3V
FIGURE 2-27:
LDO.
Load Regulation of 3.3V
Load Regulation of 3.3V LDO
Line Regulation of 3.3V LDO
Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
Conditions: VIN = 4V, + 1V Squarewave @2.5kHz
ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled
ILOAD
VIN
VOUT
VOUT
CIN = 0μF, COUT = 1μF, CBYP = 470pF,
ILOAD = 100mA, VIN & VOUT are AC coupled
FIGURE 2-26:
LDO.
Load Regulation of 3.3V
© 2007 Microchip Technology Inc.
FIGURE 2-28:
LDO.
Load Regulation of 3.3V
DS21335E-page 9
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Thermal Shutdown Response of 5.0V LDO
Line Regulation of 5.0V LDO
Conditions: VIN = 6V, CIN = 0μF, COUT = 1μF
Conditions: VIN = 6V, + 1V Squarewave @2.5kHz
VIN
VOUT
VOUT
CIN = 0μF, COUT = 1μF, CBYP = 470pF,
ILOAD = 100mA, VIN & VOUT are AC coupled
FIGURE 2-29:
LDO.
DS21335E-page 10
Line Regulation of 5.0V
ILOAD was increased until temperature of die reached about 160°C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.
FIGURE 2-30:
Thermal Shutdown
Response of 5.0V LDO.
© 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
(5-Pin SOT-23)
Symbol
1
VIN
3.1
Description
Unregulated supply input.
2
GND
3
SHDN
Ground terminal.
Shutdown control input. The regulator is fully enabled when a logic high is applied to
this input. The regulator enters shutdown when a logic low is applied to this input.
During shutdown, output voltage falls to zero and supply current is reduced to
0.5 µA (maximum).
4
Bypass
Reference bypass input. Connecting a 470 pF to this input further reduces output
noise.
5
VOUT
Regulated voltage output.
Input Voltage (VIN)
Connect the VIN pin to the unregulated source
voltage. Like all low dropout linear regulators, low
source impedance is necessary for the stable
operation of the LDO. The amount of capacitance
required to ensure low source impedance will
depend on the proximity of the input source
capacitors or battery type. For most applications,
1.0 µF of capacitance will ensure stable operation
of the LDO circuit. The type of capacitor used can
be ceramic, tantalum or aluminum electrolytic.
The low Effective Series Resistance (ESR) characteristics of the ceramic will yield better noise
and Power Supply Ripple Rejection (PSRR)
performance at high frequency.
3.2
Ground Terminal (GND)
Connect the ground pin to the input voltage
return. For the optimal noise and PSRR
performance, the GND pin of the LDO should be
tied to a quiet circuit ground. For applications
have switching or noisy inputs tie the GND pin to
the return of the output capacitor. Ground planes
help lower inductance and voltage spikes caused
by fast transient load currents and are
recommended for applications that are subjected
to fast load transients.
© 2007 Microchip Technology Inc.
3.3
Shutdown (SHDN)
The Shutdown input is used to turn the LDO on
and off. When the SHDN pin is at a logic high
level, the LDO output is enabled. When the
SHDN pin is pulled to a logic low, the LDO output
is disabled. When disabled, the quiescent current
used by the LDO is less than 0.5 µA max.
3.4
Bypass
Connecting a low-value ceramic capacitor to the
Bypass pin will further reduce output voltage
noise and improve the PSRR performance of the
LDO. While smaller and larger values can be
used, these affect the speed at which the LDO
output voltage rises when the input power is
applied. The larger the bypass capacitor, the
slower the output voltage will rise.
3.5
Output Voltage (VOUT)
Connect the output load to VOUT of the LDO. Also
connect one side of the LDO output capacitor as
close as possible to the VOUT pin.
DS21335E-page 11
TC1014/TC1015/TC1185
4.0
DETAILED DESCRIPTION
4.1
Bypass Input
The TC1014, TC1015 and TC1185 are precision fixed
output voltage regulators (if an adjustable version is
needed, see the TC1070, TC1071 and TC1187 data
sheet (DS21353). Unlike bipolar regulators, the
TC1014, TC1015 and TC1185 supply current does not
increase with load current. In addition, the LDOs’ output voltage is stable using 1 µF of capacitance over the
entire specified input voltage range and output current
range.
A 470 pF capacitor connected from the Bypass input to
ground reduces noise present on the internal
reference, which in turn, significantly reduces output
noise. If output noise is not a concern, this input may be
left unconnected. Larger capacitor values may be
used, but results in a longer time period to rated output
voltage when power is initially applied.
Figure 4-1 shows a typical application circuit. The
regulator is enabled anytime the shutdown input
(SHDN) is at or above VIH, and disabled when SHDN is
at or below VIL. SHDN may be controlled by a CMOS
logic gate or I/O port of a microcontroller. If the SHDN
input is not required, it should be connected directly to
the input supply. While in shutdown, the supply current
decreases to 0.05 µA (typical) and VOUT falls to zero
volts.
A 1 µF (min) capacitor from VOUT to ground is required.
The output capacitor should have an effective series
resistance greater than 0.1Ω and less than 5Ω. A 1 µF
capacitor should be connected from VIN to GND if there
is more than 10 inches of wire between the regulator
and the AC filter capacitor, or if a battery is used as the
power source. Aluminum electrolytic or tantalum
capacitor types can be used. (Since many aluminum
electrolytic capacitors freeze at approximately -30°C,
solid tantalums are recommended for applications
operating below -25°C.) When operating from sources
other than batteries, supply-noise rejection and
transient response can be improved by increasing the
value of the input and output capacitors and employing
passive filtering techniques.
+
+
1 µF
Battery
VIN
VOUT
TC1014
TC1015
TC1185
GND
SHDN
+
1 µF
VOUT
4.3
Bypass
470 pF
Reference
Bypass Cap
(Optional)
Shutdown Control
(to CMOS Logic or Tie
to VIN if unused)
FIGURE 4-1:
DS21335E-page 12
4.2
Typical Application Circuit.
Output Capacitor
Input Capacitor
A 1 µF capacitor should be connected from VIN to GND
if there is more than 10 inches of wire between the
regulator and this AC filter capacitor, or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitors can be used (since many
aluminum
electrolytic
capacitors
freeze
at
approximately -30°C, solid tantalum is recommended
for applications operating below -25°C). When
operating from sources other than batteries, supplynoise rejection and transient response can be
improved by increasing the value of the input and
output capacitors and employing passive filtering
techniques.
© 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
5.0
THERMAL CONSIDERATIONS
5.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
5.2
Equation 5-1 can be used in conjunction with
Equation 5-2 to ensure regulator thermal operation is
within limits. For example:
Given:
VINMAX
=
3.0V +10%
VOUTMIN
=
2.7V – 2.5%
ILOADMAX
=
40 mA
TJMAX
=
125°C
TAMAX
=
55°C
Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst-case actual power dissipation:
EQUATION 5-1:
P D ≈ ( V INMAX – V OUTMIN )I LOADMAX
Where:
Find:
1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
= [(3.0 x 1.1) – (2.7 x .975)]40 x 10–3
= 26.7 mW
PD = Worst-case actual power
dissipation
Maximum allowable power dissipation:
( T JMAX – T AMAX )
P DMAX = ------------------------------------------θ JA
125 – 55 )
= (------------------------220
= 318 mW
VINMAX = Maximum voltage on VIN
VOUTMIN = Minimum regulator output voltage
ILOADMAX = Maximum output (load) current
The
maximum
allowable
power
dissipation
(Equation 5-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die
temperature (TJMAX) and the thermal resistance from
junction-to-air (θJA). The 5-pin SOT-23 package has a
θJA of approximately 220°C/Watt.
In this example, the TC1014 dissipates a maximum of
26.7 mW below the allowable limit of 318 mW. In a
similar manner, Equation 5-1 and Equation 5-2 can be
used to calculate maximum current and/or input
voltage limits.
EQUATION 5-2:
5.3
( T JMAX – T AMAX )
P DMAX = ------------------------------------------θ JA
Where all terms are previously defined.
© 2007 Microchip Technology Inc.
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads, and wide power
supply bus lines combine to lower θJA and therefore
increase the maximum allowable power dissipation
limit.
DS21335E-page 13
TC1014/TC1015/TC1185
6.0
PACKAGING INFORMATION
TABLE 6-1:
6.1
PART NUMBER CODE AND
TEMPERATURE RANGE
Package Marking Information
1 2 3 4
(V)
TC1014
Code
TC1015
Code
TC1185
Code
1.8
AY
BY
NY
2.5
A1
B1
N1
2.6
NB
BT
NT
2.7
A2
B2
N2
2.8
AZ
BZ
NZ
2.85
A8
B8
N8
3.0
A3
B3
N3
3.3
A5
B5
N5
range and voltage
3.6
A9
B9
N9
e
represents year and 2-month period code
4.0
A0
B0
N0
f
represents lot ID number
5.0
A7
B7
N7
c & d represents part number code + temperature
6.2
Taping Form
User Direction of Feed
Device
Marking
PIN 1
PIN 1
W, Width of
Carrier Tape
P,Pitch
Standard Reel Component
Orientation
Reverse Reel Component
Orientation
Carrier Tape, Number of Components per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
5-Pin SOT-23
8 mm
4 mm
3000
7 in
DS21335E-page 14
© 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
5-Lead Plastic Small Outline Transistor (OT) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
b
N
E
E1
3
2
1
e
e1
D
A2
A
c
φ
A1
L
L1
Units
Dimension Limits
Number of Pins
MILLIMETERS
MIN
NOM
MAX
N
5
Lead Pitch
e
0.95 BSC
Outside Lead Pitch
e1
Overall Height
A
0.90
–
Molded Package Thickness
A2
0.89
–
1.30
Standoff
A1
0.00
–
0.15
Overall Width
E
2.20
–
3.20
Molded Package Width
E1
1.30
–
1.80
Overall Length
D
2.70
–
3.10
Foot Length
L
0.10
–
0.60
Footprint
L1
0.35
–
0.80
Foot Angle
φ
0°
–
30°
Lead Thickness
c
0.08
–
0.26
1.90 BSC
1.45
Lead Width
b
0.20
–
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-091B
© 2007 Microchip Technology Inc.
DS21335E-page 15
TC1014/TC1015/TC1185
NOTES:
DS21335E-page 16
© 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
APPENDIX A:
REVISION HISTORY
Revision E (February 2007)
• Section 1.0 “Electrical characteristics”:
Changed Dropout Voltage from mA to µA.
• Updated “Product Identification System”,
page 19.
• Updated Section 6.0 “Packaging Information”.
Revision D (April 2006)
• Removed “ERROR is open circuited” from SHDN
pin description in Pin Function Table.
• Added verbiage for pinout descriptions in Pin
Function Table.
• Replaced verbiage in first paragraph of Section
4.0 Detailed Description.
• Added Section 4.3 Input Capacitor
Revision C (January 2006)
• Changed TR suffix to 713 suffix in Taping Form in
Package Marking Section
Revision B (May 2002)
• Converted Telcom data sheet to Microchip
standard for Analog Handbook
Revision A (February 2001)
• Original Release of this Document under Telcom.
© 2007 Microchip Technology Inc.
DS21335E-page 17
TC1014/TC1015/TC1185
NOTES:
DS21335E-page 18
© 2007 Microchip Technology Inc.
TC1014/TC1015/TC1185
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
-X.X
X
XXXXX
Device
Output
Voltage
Temperature
Range
Package
Device:
TC1014:
TC1015:
TC1185:
50 mA LDO with Shutdown and VREF Bypass
100 mA LDO with Shutdown and VREF Bypass
150 mA LDO with Shutdown and VREF Bypass
Output Voltage:
1.8
2.5
2.6
2.7
2.8
2.85
3.0
3.3
3.6
4.0
5.0
=
=
=
=
=
=
=
=
=
=
=
Temperature Range:
V
= -40° C to +125° C
Package:
CT713 = Plastic Small Outline Transistor (SOT-23),
5-lead, Tape and Reel
Examples:
a) TC1014-1.8VCT713:
b) TC1014-2.85VCT713: 2.85V, 5LD SOT-23,
Tape and Reel.
c)
TC1014-3.3VCT713: 3.3V, 5LD SOT-23,
Tape and Reel.
a) TC1015-1.8VCT713:
1.8V
2.5V
2.6V
2.7V
2.8V
2.85V
3.0V
3.3V
3.6V
4.0V
5.0V
© 2007 Microchip Technology Inc.
1.8V, 5LD SOT-23,
Tape and Reel.
1.8V, 5LD SOT-23,
Tape and Reel.
b) TC1015-2.85VCT713: 2.85V, 5LD SOT-23,
Tape and Reel.
c) TC1015-3.0VCT713:
3.0V, 5LD SOT-23,
Tape and Reel.
a) TC1185-1.8VCT713:
1.8V, 5LD SOT-23,
Tape and Reel.
b) TC1185-2.8VCT713:
2.8V, 5LD SOT-23,
Tape and Reel.
DS21335E-page 19
TC1014/TC1015/TC1185
NOTES:
DS21335E-page 20
© 2007 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
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conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
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MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,
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SQTP is a service mark of Microchip Technology Incorporated
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All other trademarks mentioned herein are property of their
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© 2007, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona, Gresham, Oregon and Mountain View, California. The
Company’s quality system processes and procedures are for its PIC®
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EEPROMs, microperipherals, nonvolatile memory and analog
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© 2007 Microchip Technology Inc.
DS21335E-page 21
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12/08/06
DS21335E-page 22
© 2007 Microchip Technology Inc.