TI TPS54383PWPR

TPS54383,, TPS54386
www.ti.com
SLUS774B – AUGUST 2007 – REVISED OCTOBER 2007
3-A DUAL NON-SYNCHRONOUS CONVERTER WITH INTEGRATED HIGH-SIDE MOSFET
FEATURES
CONTENTS
1
• 4.5-V to 28-V Input Range
• Output Voltage Range 0.8 V to 90% of Input
Voltage
• Output Current Up to 3 A
• Two Fixed Switching Frequency Versions:
– TPS54383: 300 kHz
– TPS54386: 600 kHz
• Three Selectable Levels of Overcurrent
Protection (Output 2)
• 0.8-V 1.5% Voltage Reference
• 2.1-ms Internal Soft Start
• Dual PWM Outputs 180° Out-of-Phase
• Ratiometric or Sequential Startup Modes
Selectable by a Single Pin
• 85-mΩ Internal High-Side MOSFETs
• Current Mode Control
• Internal Compensation (See Page 16)
• Pulse-by-Pulse Overcurrent Protection
• Thermal Shutdown Protection at +148°C
• 14-Pin PowerPAD™ HTSSOP package
23
2
Electrical Characteristics
3
Device Information
9
Application Information
12
Design Examples
32
Additional References
44
DESCRIPTION
The TPS54383 and TPS54386 are dual output,
non-synchronous buck converters capable of
supporting 3-A output applications that operate from a
4.5-V to 28-V input supply voltage, and require output
voltages between 0.8 V and 90% of the input voltage.
With an internally-determined operating frequency,
soft start time, and control loop compensation, these
converters provide many features with a minimum of
external components. Channel 1 overcurrent
protection is set at 4.5 A, while Channel 2 overcurrent
protection level is selected by connecting a pin to
ground, to BP, or left floating. The setting levels are
used to allow for scaling of external components for
applications that do not need the full load capability of
both outputs.
APPLICATIONS
•
•
•
•
Device Ratings
Set Top Box
Digital TV
Power for DSP
Consumer Electronics
The outputs may be enabled independently, or may
be configured to allow either ratiometric or sequential
startup sequencing. Additionally, the two outputs may
be powered from different sources.
VIN
TPS54383
1
PVDD1
PVDD2 14
2
BOOT1
BOOT2 13
3
SW1
OUTPUT1
OUTPUT2
SW2 12
4
GND
BP 11
5
EN1
SEQ 10
6
EN2
7
FB1
ILIM2
9
FB2
8
GND
UDG-07123
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007, Texas Instruments Incorporated
TPS54383,, TPS54386
www.ti.com
SLUS774B – AUGUST 2007 – REVISED OCTOBER 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION (1)
PART NUMBER
OPERATING FREQUENCY (kHz)
PACKAGE
MEDIA
TPS54383PWP
UNITS (Pieces)
Tube
90
Tape and Reel
2000
300
TPS54383PWPR
Plastic 14-Pin HTSSOP
TPS54386PWP
Tube
90
Tape and Reel
2000
600
TPS54386PWPR
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
DEVICE RATINGS
ABSOLUTE MAXIMUM RATINGS (1)
VALUE
PVDD1, PVDD2, EN1, EN2
Input voltage range
BOOT1, BOOT2
VSW+ 7
SW1, SW2
–2 to 30
SW1, SW2 transient (< 50ns)
–3 to 31
BP
V
6.5
SEQ, ILIM2
–0.3 to 6.5
FB1, FB2
–0.3 to 3
SW1, SW2 output current
7
A
BP load current
35
mA
Tstg
Storage temperature
–55 to +165
TJ
Operating temperature
–40 to +150
Soldering temperature
+260
(1)
UNIT
30
°C
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be limited to the
Recommended DC Operating Conditions detailed in this data sheet. Exposure to conditions beyond the operational limits for extended
periods of time may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
VPVDD2
Input voltage
4.5
28
V
TJ
Operating junction
temperature
–40
+125
°C
ELECTROSTATIC DISCHARGE (ESD) PROTECTION
MIN
Human body model
UNIT
2k
CDM
1.5k
Machine Model
250
V
PACKAGE DISSIPATION RATINGS (1) (2) (3)
(1)
(2)
(3)
(4)
2
PACKAGE
THERMAL IMPEDANCE
JUNTION-TO-THERMAL PAD
(°C/W)
TA = +25°C
POWER RATING (W)
TA = +85°C
POWER RATING (W)
Plastic 14-Pin HTSSOP (PWP)
2.07 (4)
1.6
1.0
For more information on the PWP package, refer to TI Technical Brief (SLMA002A).
TI device packages are modeled and tested for thermal performance using printed circuit board designs outlined in JEDEC standards
JESD 51-3 and JESD 51-7.
For application information, see the Power Derating section.
TJ-A = +40°C/W.
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SLUS774B – AUGUST 2007 – REVISED OCTOBER 2007
ELECTRICAL CHARACTERISTICS
–40°C ≤ TJ ≤ +125°C, VPVDD1 = VPVDD2 = 12 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT SUPPLY (PVDD)
VPVDD1
VPVDD2
Input voltage range
4.5
28
V
µA
IDDSDN
Shutdown
VEN1 = VEN2 = VPVDD2
70
150
IDDQ
Quiescent, non-switching
VFB = 0.9 V, Outputs off
1.8
3.0
IDDSW
Quiescent, while-switching
SW node unloaded; Measured as BP sink
current
VUVLO
Minimum turn-on voltage
PVDD2 only
VUVLO(hys)
Hysteresis
tSTART (1) (2)
Time from startup to softstart begin
mA
5
3.8
CBP = 10 µF, EN1 and EN2 go low
simultaneously
4.1
4.4
V
400
mV
2
ms
ENABLE (EN)
VEN1
Enable threshold
VEN2
0.9
Hysteresis
IEN1
IEN2
tEN (1)
1.2
1.5
50
Enable pull-up current
VEN1 = VEN2 = 0 V
Time from enable to soft-start begin
Other EN pin = GND
6
V
mV
12
µA
µs
10
BP REGULATOR (BP)
BP
Regulator voltage
8 V < PVDD2 < 28 V
BPLDO
Dropout voltage
PVDD2 = 4.5 V; switching, no external load on
BP
IBP
(1)
IBPS
5
5.25
5.6
400
Regulator external load
mV
2
Regulator short circuit
4.5 V < PVDD2 < 28 V
V
10
20
30
TPS54383
255
310
375
TPS54386
510
630
750
mA
OSCILLATOR
fSW
Switching frequency
tDEAD (1)
Clock dead time
140
kHz
ns
ERROR AMPLIFIER (EA) and VOLTAGE REFERENCE (REF)
VFB1
Feedback input voltage
VFB2
IFB1
788
–40°C < TJ < +125°C
786
Feedback input bias current
IFB2
gM1
0°C < TJ < +85°C
800
812
812
3
50
mV
nA
(1)
gM2 (1)
Transconductance
µS
30
SOFT START (SS)
TSS1
Soft start time
TSS2
1.5
2.1
2.7
ms
OVERCURRENT PROTECTION
ICL1
Current limit channel 1
ICL2
Current limit channel 2
3.6
4.5
5.6
VILIM2 = VBP
3.6
4.5
5.6
VILIM2 = (floating)
2.4
3.0
3.6
1.15
1.50
1.75
VILIM2 = GND
VUV1
Low-level output threshold to declare a fault
VUV2
THICCUP (1)
tON1(oc) (1)
tON2(oc) (1)
(1)
(2)
Measured at feedback pin.
A
670
mV
Hiccup timeout
10
ms
Minimum overcurrent pulse width
90
150
ns
Ensured by design. Not production tested.
When both outputs are started simultaneously, a 20-mA current source charges the BP capacitor. Faster times are possible with a lower
BP capacitor value. More information can be found in the Input UVLO and Startup section.
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SLUS774B – AUGUST 2007 – REVISED OCTOBER 2007
ELECTRICAL CHARACTERISTICS (continued)
–40°C ≤ TJ ≤ +125°C, VPVDD1 = VPVDD2 = 12 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BOOTSTRAP
RBOOT1
RBOOT2
Bootstrap switch resistance
From BP to BOOT1 or BP to BOOT2,
IEXT = 50 mA
18
TJ = +25°C, VPVDD2 = 8 V
85
–40°C < TJ < +125°C, VPVDD2 = 8 V
85
165
100
200
ns
0
%
Ω
OUTPUT STAGE (Channel 1 and Channel 2)
RDS(on) (3)
MOSFET on resistance plus bond wire resistance
tON(min) (3)
Minimum controllable pulse width
ISWx peak current > 1 A (4)
DMIN
Minimum Duty Cycle
VFB = 0.9 V
DMAX
Maximum Duty Cycle
ISW
Switching node leakage current (sourcing)
TPS54383 fSW = 300 kHz
90
95
TPS54386 fSW = 600 kHz
85
90
Outputs OFF
2
mΩ
%
%
12
µA
THERMAL SHUTDOWN
TSD (3)
Shutdown temperature
TSD(hys) (3)
Hysteresis
(3)
(4)
4
148
20
°C
Ensured by design. Not production tested.
See Figure 14 for ISWx peak current <1 A.
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SLUS774B – AUGUST 2007 – REVISED OCTOBER 2007
TYPICAL CHARACTERISTICS
QUIESCENT CURRENT (NON-SWITCHING)
vs
JUNCTION TEMPERATURE
SHUTDOWN CURRENT
vs
JUNCTION TEMPERATURE
2.1
140
VBP = 5.25 V
VPVDDx = 28 V
120
VPVDDx = 12 V
ISD - Shutdown Current - mA
IDDQ - Quiescent Current - mA
2.0
1.9
1.8
1.7
1.6
1.5
-50
100
80
60
40
VPVDDx = 4.5 V
20
-25
0
25
50
75
100
0
-50
125
-25
0
25
50
75
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 1.
Figure 2.
UNDERVOLTAGE LOCKOUT THRESHOLD
vs
JUNCTION TEMPERATURE
ENABLE THRESHOLDS
vs
JUNCTION TEMPERATURE
4.2
100
125
100
125
1.25
4.1
VEN - Enable Threshold Voltage - V
VUVLO - Undervoltage Lockout - V
EN(Off)
UVLO(On)
4.0
3.9
UVLO(Off)
3.8
3.7
3.6
-50
-25
0
25
50
75
100
125
1.23
1.21
1.19
EN(On)
1.17
1.15
-50
-25
0
25
50
75
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 3.
Figure 4.
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SLUS774B – AUGUST 2007 – REVISED OCTOBER 2007
TYPICAL CHARACTERISTICS (continued)
SOFT START TIME
vs
JUNCTION TEMPERATURE
SWITCHING FREQUENCY (300 kHz)
vs
JUNCTION TEMPERATURE
3.5
350
VBP = 5.25 V
fPWM - PWM Frequency - kHz
tSS - Soft Start Time - ms
VBP = 5.25 V
3.0
2.5
2.0
1.5
-50
-25
0
25
50
75
100
330
310
290
270
-50
125
-25
0
25
50
75
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 5.
Figure 6.
SWITCHING FREQUENCY (600 kHz)
vs
JUNCTION TEMPERATURE
FEEDBACK BIAS CURRENT
vs
JUNCTION TEMPERATURE
680
100
125
100
125
5
VBP = 5.25 V
IFB - Feedback Bias Current - nA
fPWM - PWM Frequency - kHz
660
640
620
600
580
-50
6
-25
0
25
50
75
100
125
3
1
-1
-3
-5
-50
-25
0
25
50
75
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 7.
Figure 8.
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SLUS774B – AUGUST 2007 – REVISED OCTOBER 2007
TYPICAL CHARACTERISTICS (continued)
FEEDBACK VOLTAGE
vs
JUNCTION TEMPERATURE
OVERCURRENT LIMIT (CH1, CH2 HIGH LEVEL)
vs
JUNCTION TEMPERATURE
4.8
808
803
ICL - Overcurrent Limit - A
VFB - Feedback Voltage - mV
VPVDD = 24 V
798
793
788
-50
-25
0
25
50
75
100
4.6
VPVDD = 12 V
4.4
VPVDD = 5 V
4.2
4.0
-50
125
0
-25
25
50
100
TJ - Junction Temperature - °C
Figure 9.
Figure 10.
OVERCURRENT LIMIT (CH2 MID LEVEL)
vs
JUNCTION TEMPERATURE
OVERCURRENT LIMIT (CH2 LOW LEVEL)
vs
JUNCTION TEMPERATURE
125
1.8
3.4
VPVDDx = 24 V
VPVDDx = 24 V
3.2
ICL - Overcurrent Limit - A
ICL - Overcurrent Limit - A
75
TJ - Junction Temperature - °C
3.0
2.8
1.6
1.4
VPVDDx = 12 V
VPVDDx = 12 V
VPVDDx = 5 V
2.6
-50
-25
0
25
50
75
VPVDDx = 5 V
100
125
1.2
-50
-25
0
25
50
75
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 11.
Figure 12.
100
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SLUS774B – AUGUST 2007 – REVISED OCTOBER 2007
TYPICAL CHARACTERISTICS (continued)
SWITCHING NODE LEAKAGE CURRENT
vs
JUNCTION TEMPERATURE
MINUMUM CONTROLLABLE PULSE WIDTH
vs
LOAD CURRENT
400
tON - Minimum Controllable Pulse Width - ns
ISW(off) - Switching Node Leakage Current - mA
5
4
3
2
TA(°C)
–40
0
25
85
350
TA = –40°C
300
250
TA = 0°C
200
150
TA = 25°C
100
TA = 85°C
1
-50
50
-25
0
25
50
75
100
0
125
0.2
0.4
TJ - Junction Temperature - °C
0.6
0.8
1.0
IL - Load Current - A
Figure 13.
1.2
1.4
Figure 14.
OVERCURRENT LIMIT
vs
SUPPLY VOLTAGE
5.0
IOC - Overcurrent Limit - A
4.5
4.0
OCL = 3.0 A
OCL = 4.5 A
3.5
3.0
2.5
OCL = 1.5 A
2.0
1.5
1.0
4
8
12
16
20
VDD - Supply Voltage - V
24
28
Figure 15.
8
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SLUS774B – AUGUST 2007 – REVISED OCTOBER 2007
DEVICE INFORMATION
PIN CONNECTIONS
HTSSOP (PWP)
(Top View)
PVDD1
1
14 PVDD2
BOOT1
2
13 BOOT2
SW1
3
GND
4
EN1
5
10 SEQ
EN2
6
9 ILIM2
FB1
7
8 FB2
12 SW2
Thermal Pad
(bottom side)
11 BP
TERMINAL FUNCTIONS
TERMINAL
I/O
DESCRIPTION
NAME
NO.
BOOT1
2
I
Input supply to the high side gate driver for Output 1. Connect a 22-nF to 82-nF capacitor from this pin
to SW1. This capacitor is charged from the BP pin voltage through an internal switch. The switch is
turned ON during the OFF time of the converter. To slow down the turn ON of the internal FET, a small
resistor (1 Ω to 3 Ω) may be placed in series with the bootstrap capacitor.
BOOT2
13
I
Input supply to the high side gate driver for Output 2. Connect a 22-nF to 82-nF capacitor from this pin
to SW2. This capacitor is charged from the BP pin voltage through an internal switch. The switch is
turned ON during the OFF time of the converter. To slow down the turn ON of the internal FET, a small
resistor (1 Ω to 3 Ω) may be placed in series with the bootstrap capacitor.
BP
11
-
Regulated voltage to charge the bootstrap capacitors. Bypass this pin to GND with a low ESR (4.7-µF
to 10-µF X7R or X5R) ceramic capacitor.
I
Active low enable input for Output 1. If the voltage on this pin is greater than 1.55 V, Output 1 is
disabled (high-side switch is OFF). A voltage of less than 0.9 V enables Output 1 and allows soft start of
Output 1 to begin. An internal current source drives this pin to PVDD2 if left floating. Connect this pin to
GND for "always ON" operation.
I
Active low enable input for Output 2. If the voltage on this pin is greater than 1.55 V, Output 2 is
disabled (high-side switch is OFF). A voltage of less than 0.9 V enables Output 2 and allows soft start of
Output 2 to begin. An internal current source drives this pin to PVDD2 if left floating. Connect this pin to
GND for "always ON" operation.
I
Voltage feedback pin for Output 1. The internal transconductance error amplifier adjusts the PWM for
Output 1 to regulate the voltage at this pin to the internal 0.8-V reference. A series resistor divider from
Output 1 to ground, with the center connection tied to this pin, determines the value of the regulated
output voltage. Compensation for the feedback loop is provided internally to the device. See Feedback
Loop and Inductor-Capacitor ( L-C) Filter Selection section for further information.
EN1
EN2
FB1
5
6
7
FB2
8
I
Voltage feedback pin for Output 2. The internal transconductance error amplifier adjusts the PWM for
Output 2 to regulate the voltage at this pin to the internal 0.8-V reference. A series resistor divider from
Output 2 to ground, with the center connection tied to this pin, determines the value of the regulated
Output voltage. Compensation for the feedback loop is provided internally to the device. See Feedback
Loop and Inductor-Capacitor ( L-C) Filter Selection section for further information.
GND
4
-
Ground pin for the device. Connect directly to Thermal Pad.
ILIM2
9
I
Current limit adjust pin for Output 2 only. This function is intended to allow a user with asymmetrical
load currents (Output 1 load current much greater than Output 2 load current) to optimize component
scaling of the lower current output while maintaining proper component derating in a overcurrent fault
condition. The discrete levels are available as shown in Table 2, Current Limit Threshold Adjustment for
Output 2. Note: An internal 2-resistor divider (150-kΩ each) connects BP to ILIM2 and to GND.
PVDD1
1
I
Power input to the Output 1 high side MOSFET only. This pin should be locally bypassed to GND with a
low ESR ceramic capacitor of 10-µF or greater.
PVDD2
14
I
The PVDD2 pin provides power to the device control circuitry, provides the pull-up for the EN1 and EN2
pins and provides power to the Output 2 high-side MOSFET. This pin should be locally bypassed to
GND with a low ESR ceramic capacitor of 10-µF or greater. The UVLO function monitors PVDD2 and
enables the device when PVDD2 is greater than 4.1 V.
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TERMINAL FUNCTIONS (continued)
TERMINAL
NAME
NO.
I/O
DESCRIPTION
SEQ
10
I
This pin configures the output startup mode. If the SEQ pin is connected to BP, then when Output 2 is
enabled, Output 1 is allowed to start after Output 2 has reached regulation; that is, sequential startup
where Output 1 is slave to Output 2. If EN2 is allowed to go high after the outputs have been operating,
then both outputs will be disabled immediately, and the output voltages will decay according to the load
that is present. For this sequence configuration, tie EN1 to ground.
If the SEQ pin is connected to GND, then when Output 1 is enabled, Output 2 is allowed to start after
Output 1 has reached regulation; that is, sequential startup where Output 2 is slave to Output 1. If EN1
is allowed to go high after the outputs have been operating, then both outputs will be disabled
immediately, and the output voltages will decay according to the load that is present. For this sequence
configuration, tie EN2 to ground.
If left floating, Output 1 and Output 2 start ratio-metrically when both outputs are enabled at the same
time. They will soft start at a rate determined by their final output voltage and enter regulation at the
same time. If the EN1 and EN2 pins are allowed to operate independently, then the two outputs also
operate independently
NOTE: An internal two resistor (150-kΩ each) divider connects BP to SEQ and to GND. See the
Sequence States table.
SW1
3
O
Source (switching) output for Output 1 PWM. A snubber is recommended to reduce ringing on this
node. See SW Node Ringing for further information.
SW2
12
O
Source (switching) output for Output 2 PWM. A snubber is recommended to reduce ringing on this
node. See SW Node Ringing for further information.
-
-
This pad must be tied externally to a ground plane and the GND pin.
Thermal Pad
10
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SLUS774B – AUGUST 2007 – REVISED OCTOBER 2007
BLOCK DIAGRAM
2
BOOT1
1
PVDD1
3
SW1
BP
CLK1
Level
Shift
Current
Comparator
f(IDRAIN1) + DC(ofst)
+
GND
4
+
FB1
S
Q
R
R
Q
f(IDRAIN1)
7
Overcurrent Comp
+
0.8 VREF
RCOMP
Soft Start
1
SD1
f(ISLOPE1)
BP
f(IMAX1)
CLK1
CCOMP
Anti-Cross
Conduction
VDD2
Weak
Pull-Down
MOSFET
f(ISLOPE1)
Ramp
Gen 1
TSD
6 mA
EN1
5
EN2
6
1.2 MHz
Oscilator
6 mA
CLK1
Divide
by 2/4
f(ISLOPE2)
Ramp
Gen 2
SD1
Internal
Control
SD2
CLK2
UVLO
150 kW
SEQ 10
BP
FB1
150 kW
FB2
Output
Undervoltage
Detect
13 BOOT2
BP
CLK2
Level
Shift
14 PVDD2
Current
Comparator
f(IDRAIN2) + DC(ofst)
+
GND
4
+
FB2
S
Q
R
R
Q
FET
Switch
f(IDRAIN2)
8
Overcurrent Comp
+
0.8 VREF
12 SW2
RCOMP
Soft Start
2
SD2
f(ISLOPE2)
f(IMAX2)
CLK2
CCOMP
5.25-V
Regulator
BP 11
150 kW
BP
Anti-Cross
Conduction
Weak
Pull-Down
MOSFET
PVDD2
BP
ILIM2
Level
Select
9
150 kW
0.8 VREF
References
IMAX2 (Set to one of three limits)
UDG-07124
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APPLICATION INFORMATION
FUNCTIONAL DESCRIPTION
The TPS54383 and TPS54386 are dual output, non-synchronous converters. Each PWM channel contains an
internally-compensated error amplifier, current mode pulse width modulator (PWM), switch MOSFET, enable,
and fault protection circuitry. Common to the two channels are the internal voltage regulator, voltage reference,
clock oscillator, and output voltage sequencing functions.
DESIGN HINT
The TPS5438x contains internal slope compensation and loop compensation
components; therefore, the external L-C filter must be selected appropriately so that
the resulting control loop meets criteria for stability. This approach differs from an
externally-compensated controller, where the L-C filter is generally selected first, and
the compensation network is found afterwards. (See Feedback Loop and L-C Filter
Selection section.)
NOTE:
Unless otherwise noted, the term TPS5438x applies to both the TPS54383 and
TPS54386. Also, unless otherwise noted, a label with a lowercase x appended implies
the term applies to both outputs of the two modulator channels. For example, the term
ENx implies both EN1 and EN2. Unless otherwise noted, all parametric values given
are typical. Refer to the Electrical Characteristics for minimum and maximum values.
Calculations should be performed with tolerance values taken into consideration.
Voltage Reference
The bandgap cell common to both outputs, trimmed to 800 mV.
Oscillator
The oscillator frequency is internally fixed at two times the SWx node switching frequency. The two outputs are
internally configured to operate on alternating switch cycles (that is, 180° out of phase).
Input Undervoltage Lockout (UVLO) and Startup
When the voltage at the PVDD2 pin is less than 4.1 V, a portion of the internal bias circuitry is operational, and
all other functions are held OFF. All of the internal MOSFETs are also held OFF. When the PVDD2 voltage rises
above the UVLO turn-on threshold, the state of the enable pins determines the remainder of the internal startup
sequence. If either output is enabled (ENx pulled low), the BP regulator turns on, charging the BP capacitor with
a 20-mA current. When the BP pin is greater than 4 V, PWM is enabled and soft start begins, depending on the
SEQ mode of operation and the EN1 and EN2 settings.
Note that the internal regulator and control circuitry are powered from PVDD2. The voltage on PVDD1 may be
higher or lower than PVDD2. (See the Dual Supply Operation section.)
Enable and Timed Turn On of the Outputs
Each output has a dedicated (active low) enable pin. If left floating, an internal current source pulls the pin to
PVDD2. By grounding, or by pulling the ENx pin to below approximately 1.2 V with an external circuit, the
associated output is enabled and soft start is initiated.
If both enable pins are left in the high state, the device operates in a shutdown mode, where the BP regulator is
shut down and minimal functions are active. The total standby current from both PVDD pins is approximately 70
µA at 12-V input supply.
12
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An R-C connected to an ENx pin may be used to delay the turn-on of the associated output after power is
applied to PVDDx (see Figure 16). After power is applied to PVDD2, the voltage on the ENx pin slowly decays
towards ground. Once the voltage decays to approximately 1.2 V, then the output is enabled and the startup
sequence begins. If it is desired to enable the outputs of the device immediately upon the application of power to
PVDD2, then omit these two components and tie the ENx pin to GND directly.
If an R-C circuit is used to delay the turn-on of the output, the resistor value must be much less than 1.2 V / 6µA
or 200 kΩ. A suggested value is 51 kΩ. This resistor value allows the ENx voltage to decay below the 1.2-V
threshold while the 6-µA bias current flows.
The capacitor value required to delay the startup time (after the application of PVDD2) is shown in Equation 1.
C=
tDELAY
farads
æ VIN - 2 ´ IENx ´ R ö
R ´ ln ç
÷
è VTH - IENx ´ R ø
(1)
where:
•
•
•
R and C are the timing components
VTH is the 1.2-V enable threshold voltage
IENx is the 6 µA enable pin biasing current
Other enable pin functionality is dictated by the state of the SEQ pin. (See the Output Voltage Sequencing
section.)
PVDD2
6 mA
C
ENx
PVDDx
+
PVDDx
R
1.2-V
Threshold
1.2 V
TPS5438x
ENx
VOUTx
0
tDELAY
tDELAY + tSS
T - Time
Figure 16. Startup Delay Schematic
Figure 17. Startup Delay with R-C on Enable
DESIGN HINT
If delayed output voltage startup is not necessary, simply connect EN1 and EN2 to
GND. This configuration allows the outputs to start immediately on valid application of
PVDD2.
If ENx is allowed to go high after the Outputx has been in regulation, the upper MOSFET shuts off, and the
output decays at a rate determined by the output capacitor and the load. The internal pulldown MOSFET remains
in the OFF state. (See the Bootstrap for N-Channel MOSFET section.)
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Output Voltage Sequencing
The TPS5438x allows single-pin programming of output voltage startup sequencing. During power-on, the state
of the SEQ pin is detected. Based on whether the pin is tied to BP, to GND, or left floating, the outputs behave
as described in Table 1.
Table 1. Sequence States
SEQ PIN STATE
MODE
EN1
EN2
Ignored by the device.when VEN2 <
enable threshold voltage
BP
Sequential, Output 2 then Output 1
Tie EN1 to < enable threshold voltage
for BP to be active when VEN2 >
enable threshold voltage
Active
Tie EN1 to > enable threshold voltage
for low quiescent current (BP inactive)
when VEN2 > enable threshold voltage
Ignored by the device.when VEN1 <
enable threshold voltage
GND
Sequential, Output 1 then Output 2
Tie EN2 to < enable threshold voltage
for BP to be active when VEN1 >
enable threshold voltage
Active
Tie EN2 to > enable threshold voltage
for low quiescent current (BP inactive)
when VEN1 > enable threshold voltage
(floating)
Independent or Ratiometric, Output 1
and Output 2
Active. EN1 and EN2 must be tied
together for Ratio-metric startup.
Active. EN1 and EN2 must be tied
together for Ratio-metric startup.
If the SEQ pin is connected to BP, then when Output 2 is enabled, Output 1 is allowed to start approximately 400
µs after Output 2 has reached regulation; that is, sequential startup where Output 1 is slave to Output 2. If EN2 is
allowed to go high after the outputs have been operating, then both outputs are disabled immediately, and the
output voltages decay according to the load that is present.
If the SEQ pin is connected to GND, then when Output 1 is enabled, Output 2 is allowed to start approximately
400 µs after Output 1 has reached regulation; that is, sequential startup where Output 2 is slave to Output 1. If
EN1 is allowed to go high after the outputs have been operating, then both outputs are disabled immediately,
and the output voltages decay according to the load that is present.
SEQ = BP
Sequential
CH2 then CH1
SEQ = GND
Sequential
CH1 then CH2
5-V VOUT1
(2 V/div)
5-V VOUT1
(2 V/div)
3.3-V VOUT2
(2 V/div)
3.3-V VOUT2
(2 V/div)
T - Time - 1 ms/div
T - Time - 1 ms/div
Figure 18. SEQ Pin TIed to BP
14
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Figure 19. SEQ Pin Tied to GND
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NOTE:
An R-C network connected to the ENx pin may be used in addition to the SEQ pin in
sequential mode to delay the startup of the first output voltage. This approach may be
necessary in systems with a large number of output voltages and elaborate voltage
sequencing requirements. See Enable and Timed Turn On of the Outputs.
If the SEQ pin is left floating, Output 1 and Output 2 each start ratiometrically when both outputs are enabled at
the same time. Output 1 and Output 2 soft start at a rate that is determined by the respective final output
voltages and enter regulation at the same time. If the EN1 and EN2 pins are allowed to operate independently,
then the two outputs also operate independently.
5-V VOUT1
(2 V/div)
3.3-V VOUT2
(2 V/div)
T - Time - 1 ms/div
Figure 20. SEQ Pin Floating
Soft Start
Each output has a dedicated soft start circuit. The soft start voltage is an internal digital reference ramp to one of
two noninverting inputs of the error amplifier. The other input is the (internal) precision 0.8-V reference. The total
ramp time for the FB voltage to charge from 0 V to 0.8 V is about 2.1 ms. During a soft start interval, the
TPS5438x output slowly increases the voltage to the noninverting input of the error amplifier. In this way, the
output voltage ramps up slowly until the voltage on the noninverting input to the error amplifier reaches the
internal 0.8 V reference voltage. At that time, the voltage at the noninverting input to the error amplifier remains
at the reference voltage.
NOTE:
To avoid a disturbance in the output voltage during the stepping of the digital soft
start, a minimum output capacitance of 50µF is recommended. See Feedback Loop
and Inductor-Capacitor (L-C) Filter Selection Once the filter and compensation
components have been established, laboratory measurements of the physical design
should be performed to confirm converter stability.
During the soft start interval, pulse-by-pulse current limiting is in effect. If an overcurrent pulse is detected, six
PWM pulses are skipped to allow the inductor current to decay before another PWM pulse is applied. (See the
Output Overload Protection section.) There is no pulse skipping if a current limit pulse is not detected.
DESIGN HINT
If the rate of rise of the input voltage (PVDDx) is such that the input voltage is too low
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to support the desired regulation voltage by the time Soft Start has completed, then
the output UV circuit may trip and cause a hiccup in the output voltage. In this case,
use a timed delay startup from the ENx pin to delay the startup of the output until the
PVDDx voltage has the capability of supporting the desired regulation voltage. See
Operating Near Maximum Duty Cycle and Maximum Output Capacitance for related
information.
Output Voltage Regulation
Each output has a dedicated feedback loop comprised of a voltage setting divider, an error amplifier, a pulse
width modulator, and a switching MOSFET. The regulation output voltage is determined by a resistor divider
connecting the output node, the FBx pin, and GND (see Figure 21). Assuming the value of the upper voltage
setting divider is known, the value of the lower divider resistor for a desired output voltage is calculated by
Equation 2.
VREF
R2 = R1´
VOUT - VREF
(2)
where
•
VREF is the internal 0.8-V reference voltage
TPS5438x
1
PVDD1
PVDD2 14
2
BOOT1
BOOT2 13
3
SW1
SW2 12
4
GND
BP 11
5
EN1
SEQ 10
6
EN2
ILIM2
9
7
FB1
FB2
8
OUTPUT1
R1
R2
UDG-07011
Figure 21. Feedback Network for Channel 1
DESIGN HINT
There is a leakage current of up to 12 µA out of the SW pin when a single output of
the TPS5438x is disabled. Keeping the series impedance of R1 + R2 less than 50 kΩ
prevents the output from floating above the referece voltage while the controller output
is in the OFF state.
16
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Feedback Loop and Inductor-Capacitor (L-C) Filter Selection
In the feedback signal path, the output voltage setting divider is followed by an internal gM-type error amplifier
with a typical transconductance of 30 µS. An internal series connected R-C circuit from the gM amplifier output to
ground serves as the compensation network for the converter. The signal from the error amplifier output is then
buffered and combined with a slope compensation signal before it is mirrored to be referenced to the SW node.
Here, it is compared with the current feedback signal to create a pulse-width-modulated (PWM) signal-fed to
drive the upper MOSFET switch. A simplified equivalent circuit of the signal control path is depicted in Figure 22.
NOTE:
Noise coupling from the SWx node to internal circuitry of BOOTx may impact narrow
pulse width operation, especially at load currents less than 1 A. See SW Node
Ringing for further information on reducing noise on the SWx node.
BOOT
TPS5438x
ICOMP - ISLOPE
Error Amplifier
0.8 VREF
+
+
FB
PWM to
Switch
x2
ISLOPE
ICOMP
Offset
f(IDRAIN)
RCOMP
SW
CCOMP
11.5 kW
RCOMP
(kW)
CCOMP
(pF)
TPS54383
700
40
TPS54386
700
20
UDG-07012
Figure 22. Feedback Loop Equivalent Circuit
A more conventional small signal equivalent block diagram is shown in Figure 23. Here, the full closed loop
signal path is shown. Because the TPS5438x contains internal slope compensation and loop compensation
components, the external L-C filter must be selected appropriately so that the resulting control loop meets criteria
for stability. This approach differs from an externally-compensated controller, where the L-C filter is generally
selected first, and the compensation network is found afterwards. To find the appropriate L and C filter
combination, the Output-to-Vc signal path plots (see the next section) of gain and phase are used along with
other design criterial to aid in finding the combinations that best results in a stable feedback loop.
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VIN
VC
+
VOUT
+
Modulator
VREF
_
_
Filter
Current
Feedback
Network
Compensation
Network
Figure 23. Small Signal Equivalent Block Diagram
Inductor-Capacitor (L-C) Selection
The following figures plot the TPS5438x Output-to-Vc gain and phase versus frequency for various duty cycles
(10%, 30%, 50%, 70%, 90%) at three (200 mA, 400 mA, 600 mA) peak-to-peak ripple current levels. The loop
response curve selected to compensate the loop is based on the duty cycle of the application and the ripple
current in the inductor. Once the curve has been selected and the inductor value has been calculated, the output
capacitor is found by calculating the L-C resonant frequency required to compensate the feedback loop. A brief
example follows the curves.
Note that the internal error amplifier compensation is optimized for output capacitors with an ESR zero frequency
between 20 kHz and 60 kHz. See the following sections for further details.
GAIN AND PHASE
vs
FREQUENCY
Duty Cycle %
Gain Phase
10
30
50
70
90
80
60
225
80
180
60
Gain - dB
90
Phase - °
135
40
270
100
Duty Cycle %
Gain Phase
10
30
50
70
90
225
180
135
90
40
45
20
45
20
0
0
0
0
-45
-20
100
1k
10 k
100 k
f - Frequency -Hz
-90
1M
Figure 24. TPS54383 at 200-mApp Ripple Current
18
Phase - °
270
100
Gain - dB
GAIN AND PHASE
vs
FREQUENCY
-45
-20
100
1k
10 k
100 k
-90
1M
Figure 25. TPS54383 at 400-mApp Ripple Current
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GAIN AND PHASE
vs
FREQUENCY
270
85
225
180
70
180
135
55
135
40
90
90
40
Gain - dB
225
45
25
20
0
10
0
-45
-20
100
1k
10 k
100 k
f - Frequency -Hz
-5
-90
1M
-20
100
Figure 26. TPS54383 at 600-mApp Ripple Current
Phase - °
Duty Cycle %
Gain Phase
10
30
50
70
90
Phase - °
Gain - dB
60
100
270
100
80
GAIN AND PHASE
vs
FREQUENCY
45
Duty Cycle %
Gain Phase
10
30
50
70
90
1k
0
-45
10 k
100 k
f - Frequency - Hz
-90
1M
Figure 27. TPS54386 at 200-mApp Ripple Current
GAIN AND PHASE
vs
FREQUENCY
GAIN AND PHASE
vs
FREQUENCY
100
270
85
225
180
70
180
135
55
135
40
90
270
100
225
45
20
0
-20
100
Duty Cycle %
Gain Phase
10
30
50
70
90
1k
0
-45
10 k
100 k
f - Frequency -Hz
-90
1M
Figure 28. TPS54386 at 400-mApp Ripple Current
Gain - dB
90
40
Phase - °
Gain - dB
60
45
25
10
-5
-20
100
Duty Cycle %
Gain Phase
10
30
50
70
90
1k
Phase - °
80
0
-45
10 k
100 k
f - Frequency - Hz
-90
1M
Figure 29. TPS54386 at 600-mApp Ripple Current
Maximum Output Capacitance
With internal pulse-by-pulse current limiting and a fixed soft start time, there is a maximum output capacitance
which may be used before startup problems begin to occur. If the output capacitance is large enough so that the
device enters a current limit protection mode during startup, then there is a possibility that the output will never
reach regulation. Instead, the TPS5438x simply shuts down and attempts a restart as if the output were
short-circuited to ground. The maximum output capacitance (including bypass capacitance distributed at the
load) is given by Equation 3:
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R1
VREF (1 + R2 ) ´ TS
tSS
R1
1
+
)
COUTmax =
ICLx - VREF (1 + R2 ) (1 RLOAD
VREF
2 ´ VIN ´ L
(3)
Minimum Output Capacitance
Ensure the value of capacitance selected for closed loop stability is compatible with the requirements of Soft
Start.
Modifying The Feedback Loop
Within the limits of the internal compensation, there is flexibility in the selection of the inductor and output
capacitor values. A smaller inductor increases ripple current, and raises the resonant frequency, thereby
incerasing the required amount of output capacitance. A smaller capacitor could also be used, increasing the
resonant frequency, and increasing the overall loop bandwidth—perhaps at the expense of adequate phase
margin.
The internal compensation of the TPS54x8x is designed for capacitors with an ESR zero frequency between
20kHz and 60kHz. It is possible, with additional feedback compensation components, to use capacitors with
higher or lower ESR zero frequencies. For either case, the components C1 and R3 (ref.Figure 30 ) are added to
re-compensate the feedback loop for stability. In this configuration a low frequency pole is followed by a higher
frequency zero. The placement of this pole-zero pair is dependent on the type of output capacitor used, and the
desired closed loop frequency response.
TPS5438x
1
PVDD1
PVDD2 14
2
BOOT1
BOOT2 13
3
SW1
SW2 12
4
GND
BP 11
5
EN1
SEQ 10
6
EN2
ILIM2
9
7
FB1
FB2
8
OUTPUT1
C2
R1
C1
R2
R3
UDG-07013
Figure 30. Optional Loop Compensation Components
NOTE:
Once the filter and compensation components have been established, laboratory
measurements of the physical design should be performed to confirm converter
stability.
Using High-ESR Output Capacitors
If a high ESR capacitor is used in the output filter, a zero appears in the loop response that could lead to
instability. To compensate, a small R-C series connected network is placed in parallel with the lower voltage
setting divider resistor (Ref Figure 30). The values of the components are determined such that a pole is placed
at the same frequency as the ESR zero and a new zero is placed at a frequency location conducive to good loop
stability.
20
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The value of the resistor is calculated using a ratio of impedances to match the ratio of ESR zero frequency to
the desired zero frequency.
R3 =
R2
æ æ fZERO(desired)
çç
ç ç fESR(zero)
èè
ö ö
÷ - 1÷
÷ ÷
ø ø
(4)
where:
•
•
fESR(zero) is the ESR zero frequency of the output capacitor.
fZERO(desired) is the desired frequency of the zero added to the feedback. This frequency should be placed
between 20 kHz and 60 kHz to ensure good loop stability.
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The value of the capacitor is calculated in Equation 5.
C1 =
1
2p ´ REQ ´ fESR(zero)
(5)
where:
•
REQ is an equivalent impedance created by the parallel combination of the voltage setting divider resistors (R1
and R2) in series with R3.
REQ = R3 +
1
ææ 1 ö æ 1 öö
çç ÷ + ç
÷÷
è è R1 ø è R2 ø ø
(6)
Using All Ceramic Output Capacitors
With low ESR ceramic capacitors, there may not be enough phase margin at the crossover frequency. In this
case, (Ref Figure 30) resistor R3 is set equal to 1/2 R2. This lowers the gain by 6 dB, reduce the crossover
frequency, and improve phase margin.
The value of C1 is found by determining the frequency to place the low frequency pole. The minimum frequency
to place the pole is 1 kHz. Any lower, and the time constant will be too slow and interfere with the internal soft
start. (Ref. Soft Start) The upper bound for the pole frequency is determined by the operating frequency of the
converter. It is 3 kHz for the TPS54x83, and 6 kHz for the TPS54x86. C1 is then found from Equation 7. Keep
component tolerances in mind when selecting the desired pole frequency.
C1 =
1
2p ´ REQ ´ fPOLE(desired)
(7)
where:
•
•
fPOLE(desired)is the desired pole frequency between 1 kHz and 3 kHz (TPS54x83) or 1 kHz and 6 kHz
(TPS54x86).
REQ is an equivalent impedance created by the parallel combination of the voltage setting divider resistors (R1
and R2) in series with R3.
REQ = R3 +
1
ææ 1 ö æ 1 öö
çç ÷ + ç
÷÷
è è R1 ø è R2 ø ø
(8)
If it is necessary to increase phase margin, place a capacitor in parallel with the upper voltage setting divider
resistor (Ref. C2 in Equation 9).
C2 =
1
R1
´ 1+
2p ´ fC ´ R1
æ (R2 ´ R3 ) ö
çç
÷÷
è (R2 + R3 ) ø
(9)
where
•
22
fC is the unity gain crossover frequency, (approximately 50 kHz for most designs following these guidelines)
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Example: TPS54386 Buck Converter Operating at 12-V Input, 3.3-V Output and 400-mA(P-P) Ripple Current
First, the steady state duty cycle is calculated. Assuming the rectifier diode has a voltage drop of 0.5 V, the duty
cycle is approximated using Equation 10.
VOUT + VDIODE
3.3 + 0.5
= 30%
d=
=
VIN + VDIODE
12 + 0.5
(10)
The filter inductor is then calculated; see Equation 11.
V - VOUT
12 - 3.3
1
´ d ´ TS =
´ 0.3 ´
= 10.9 mH
L = IN
DIL
0.4
600000
(11)
A custom-designed inductor may be used for the application, or a standard value close to the calculated value
may be used. For this example, a standard 10-µH inductor is used. Using Figure 28, find the 30% duty cycle
curve. The 30% duty cycle curve has a down slope from low frequency and rises at approximately 6 kHz. This
curve is the resonant frequency that must be compensated. Any frequency wthin an octave of the peak may be
used in calculating the capacitor value. In this example, 6 kHz is used.
1
C=
1
2
L ´ (2 ´ p ´ fRES )
=
10 ´ 10
-6
2
= 70 mF
´ (2 ´ 3.14 ´ 6000 )
(12)
A 68-µF capacitor should be used as a bulk capacitor, with up to 10 µF of ceramic bypass capacitance. To
ensure the ESR zero does not significantly impact the loop response, the ESR of the bulk capacitor should be
placed a decade above the resonant frequency.
RESR <
1
1
=
» 40 mW
2 ´ p ´ 10 ´ fRES ´ C 2 ´ 3.14 ´ 10 ´ 6000 ´ 68 ´ (10 )-6
(13)
The resulting loop gain and phase are shown in Figure 31. Based on measurement, loop crossover is 45 kHz
with a phase margin of 60 degrees.
GAIN AND PHASE
vs
FREQUENCY
180
80
70
Phase
135
60
90
45
40
0
30
20
Phase - °
Gain - dB
50
-45
10
-90
0
Gain
-135
-10
-20
100
1k
10 k
100 k
f - Frequency - Hz
-180
1M
Figure 31. Example Loop Result
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Bootstrap for the N-Channel MOSFET
A bootstrap circuit provides a voltage source higher than the input voltage and of sufficient energy to fully
enhance the switching MOSFET each switching cycle. The PWM duty cycle is limited to a maximum of 90%,
allowing an external bootstrap capacitor to charge through an internal synchronous switch (between BP and
BOOTx) during every cycle. When the PWM switch is commanded to turn ON, the energy used to drive the
MOSFET gate is derived from the voltage on this capacitor.
To allow the bootstrap capacitor to charge each switching cycle, an internal pulldown MOSFET (from SW to
GND) is turned ON for approximately 140 ns at the beginning of each switching cycle. In this way, if, during light
load operation, there is insufficient energy for the SW node to drive to ground naturally, this MOSFET forces the
SW node toward ground and allow the bootstrap capacitor to charge.
Because this is a charge transfer circuit, care must be taken in selecting the value of the bootstrap capacitor. It
must be sized such that the energy stored in the capacitor on a per cycle basis is greater than the gate charge
requirement of the MOSFET being used.
DESIGN HINT
For the bootstrap capacitor, use a ceramic capacitor with a value between 22 nF and
82 nF.
NOTE:
For 5-V input applications, connect PVDDx to BP directly. This connection bypasses
the internal control circuit regulator and provides maximum voltage to the gate drive
circuitry. In this configuration, shutdown mode IDDSDN will be the same as quiescent
IDDQ.
Light Load Operation
There is no special circuitry for pulse skipping at light loads. The normal characteristic of a nonsynchronous
converter is to operate in the discontinuous conduction mode (DCM) at an average load current less than
one-half of the inductor peak-to-peak ripple current. Note that the amplitude of the ripple current is a function of
input voltage, output voltage, inductor value, and operating frequency, as shown in Equation 14.
1 VIN - VOUT
IDCM = ´
´ d ´ TS
L
2
(14)
Further, during discontinuous mode operation the commanded pulse width may become narrower than the
capability of the converter to resolve. To maintain the output voltage within regulation, skipping switching pulses
at light load conditions is a natural by-product of that mode. This condition may occur if the output capacitor is
charged to a value greater than the output regulation voltage, and there is insufficient load to discharge the
capacitor. A by-product of pulse skipping is an increase in the peak-to-peak output ripple voltage.
24
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SW Waveform
SW Waveform
VOUT
Ripple
VOUT
Ripple
Skipping
VIN = 12 V
VOUT = 5 V
Inductor
Current
Steady State
VIN = 12 V
VOUT = 5 V
Inductor
Current
Figure 32. Steady State
Figure 33. Skipping
DESIGN HINT
If additional output capacitance is required to reduce the output voltage ripple during
DCM operation, be sure to recheck Feedback Loop and Inductor-Capacitor (L-C)
Filter Selection and Maximum Output Capacitance sections.
SW Node Ringing
A portion of the control circuitry is referenced to the SW node. To ensure jitter-free operation, it is necessary to
decrease the voltage waveform ringing at the SW node to less than 5 volts peak and of a duration of less than
30-ns. In addition to following good printed circuit board (PCB) layout practices, there are a couple of design
techniques for reducing ringing and noise.
SW Node Snubber
Voltage ringing observable at the SW node is caused by fast switching edges and parasitic inductance and
capacitance. If the ringing results in excessive voltage on the SW node, or erratic operation of the converter, an
R-C snubber may be used to dampen the ringing and ensure proper operation over the full load range.
DESIGN HINT
A series-connected R-C snubber (C = between 330 pF and 1 nF, R = 10 Ω)
connected from SW to GND reduces the ringing on the SW node.
Bootstrap Resistor
A small resistor in series with the bootstrap capacitor reduces the turn-on time of the internal MOSFET, thereby
reducing the rising edge ringing of the SW node.
DESIGN HINT
A resistor with a value between 1Ω and 3Ω may be placed in series with the bootstrap
capacitor to reduce ringing on the SW node.
DESIGN HINT
Placeholders for these components should be placed on the initial prototype PCBs in
case they are needed.
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Output Overload Protection
In the event of an overcurrent during soft start on either output (such as starting into an output short),
pulse-by-pulse current limiting and PWM frequency division are in effect for that output until the internal soft start
timer ends. At the end of the soft start time, a UV condition is declared and a fault is declared. During this fault
condition, both PWM outputs are disabled and the small pulldown MOSFETs (from SWx to GND) are turned ON.
This process ensures that both outputs discharge to GND in the event that overcurrent is on one output while the
other is not loaded. The converter then enters a hiccup mode timeout before attempting to restart. "Frequency
Division" means if an overcurrent pulse is detected, six clock cycles are skipped before a next PWM pulse is
initiated, effectively dividing the operating frequency by six and preventing excessive current build up in the
inductor.
In the event of an overcurrent on either output after the output reaches regulation, pulse-by-pulse current limit is
in effect for that output. In addition, an output undervoltage (UV) comparator monitors the FBx voltage (that
follows the output voltage) to declare a fault if the output drops below 85% of regulation. During this fault
condition, both PWM outputs are disabled and the small pulldown MOSFETs (from SWx to GND) are turned ON.
This design ensures that both outputs discharge to GND, in the event that overcurrent is on one output while the
other is not loaded. The converter then enters a hiccup mode timeout before attempting to restart.
The overcurrent threshold for Output 1 is set nominally at 4.5 A. The overcurrent level of Output 2 is determined
by the state of the ILIM2 pin. The ILIM setting of Output 2 is not latched in place and may be changed during
operation of the converter.
Table 2. Current Limit Threshold Adjustment for
Output 2
ILIM2 Connection
OCP Threshold for Output 2
BP
4.5 A nominal setting
(floating)
3.0 A nominal setting
GND
1.5 A nominal setting
DESIGN HINT
The OCP threshold refers to the peak current in the internal switch. Be sure to add
one-half of the peak inductor ripple current to the dc load current in determining how
close the actual operating point is to the OCP threshold
Operating Near Maximum Duty Cycle
If the TPS5438x operates at maximum duty cycle, and if the input voltage is insufficient to support the output
voltage (at full load or during a load current transient), then there is a possibility that the output voltage will fall
from regulation and trip the output UV comparator. If this should occur, the TPS5438x protection circuitry will
declare a fault and enter a shut down-and-restart cycle.
DESIGN HINT
Ensure that under ALL conditions of line and load regulation, there is sufficient duty
cycle to maintain output voltage regulation.
To calculate the operating duty cycle, use Equation 15.
d=
VOUT + VDIODE
VIN + VDIODE
(15)
where
•
26
VDIODE is the voltage drop of the rectifier diode
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Dual Supply Operation
It is possible to operate a TPS5438x from two supply voltages. If this application is desired, then the sequencing
of the supplies must be such that PVDD2 is above the UVLO voltage before PVDD1 begins to rise. This level
requirement ensures that the internal regulator and the control circuitry are in operation before PVDD1 supplies
energy to the output. In addition, Output 1 must be held in the disabled state (EN1 high) until there is sufficient
voltage on PVDD1 to support Output 1 in regulation. (See the Operating Near Maximum Duty Cycle section.)
The preferred sequence of events is:
1. PVDD2 rises above the input UVLO voltage
2. PVDD1 rises with Output 1 disabled until PVDD1 rises above level to support Output 1 regulation.
With these two conditions satisfied, there is no restriction on PVDD2 to be greater than, or less than PVDD1.
DESIGN HINT
An R-C delay on EN1 may be used to delay the startup of Output1 for a long enough
period of time to ensure that PVDD1 can support Output 1 load.
Cascading Supply Operation
It is possible to source PVDD1 from Output 2 as depicted in Figure 34 and Figure 35. This configuration may be
preferred if the input voltage is high, relative to the voltage on Output 1.
VIN
TPS54383
1
PVDD1
PVDD2 14
2
BOOT1
BOOT2 13
3
SW1
SW2 12
4
GND
BP 11
5
EN1
SEQ 10
6
EN2
ILIM2
9
7
FB1
FB2
8
OUTPUT2
OUTPUT1
UDG-07015
Figure 34. Schematic Showing Cascading PVDD1 from Output 2
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PVDD2
Output2
PVDD1
Output1
T - Time
Figure 35. Waveforms Resulting from Cascading PVDD1 from Output 2
In this configuration, the following conditions must be maintained:
1. Output 2 must be of a voltage high enough to maintain regulation of Output 1 under all load conditions.
2. The sum of the current drawn by Output 2 load plus the current into PVDD1 must be less than the overload
protection current level of Output 2.
3. The method of output sequencing must be such that the voltage on Output 2 is sufficient to support Output 1
before Output 1 is enabled. This requrement may be accomplished by:
a. a delay of the enable function
b. selecting sequential sequencing of Output 1 starting after Output 2 is in regulation
Multiphase Operation
The TPS5438x is not designed to operate as a two-channel multiphase converter. See http://www.power.ti.com
for appropriate device selection.
Bypass and FIltering
As with any integrated circuit, supply bypassing is important for jitter-free operation. To improve the noise
immunity of the converter, ceramic bypass capacitors must be placed as close to the package as possible.
1. PVDD1 to GND: Use a 10-µF ceramic capacitor
2. PVDD2 to GND: Use a 10-µF ceramic capacitor
3. BP to GND: Use a 4.7-µF to 10-µF ceramic capacitor
Over-Temperature Protection and Junction Temperature Rise
The over-temperature thermal protection limits the maximum power to be dissipated at a given operating ambient
temperature. In other words, at a given device power dissipation, the maximum ambient operating temperature is
limited by the maximum allowable junction operating temperature. The device junction temperature is a function
of power dissipation, and the thermal impedance from the junction to the ambient. If the internal die temperature
should reach the thermal shutdown level, the TPS5438x shuts off both PWMs and remains in this state until the
die temperature drops below the hysteresis value, at which time the device restarts.
The first step to determine the device junction temperature is to calculate the power dissipation. The power
dissipation is dominated by the two switching MOSFETs and the BP internal regulator. The power dissipated by
each MOSFET is composed of conduction losses and output (switching) losses incurred while driving the
external rectifier diode. To find the conduction loss, first find the RMS current through the upper switch MOSFET.
28
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2
æ
æ (D I
2
OUTPUTx )
IRMS(outputx) = D ´ ç (IOUTPUTx ) + ç
çç
ç
12
è
è
öö
÷÷
÷ ÷÷
øø
(16)
where
•
•
•
D is the duty cycle
IOUTPUTx is the dc output current
ΔIOUTPUTx is the peak ripple current in the inductor for Outputx
Notice the impact of the operating duty cycle on the result.
Multiplying the result by the RDS(on) of the MOSFET gives the conduction loss.
PD(cond) = IRMS(outputx)2 ´ RDS(on)
(17)
The switching loss is approximated by:
2
(VIN) ´ CJ ´ fS
PD(SW) =
2
(18)
where
•
•
where CJ is the prallel capacitance of the rectifier diode and snubber (if any)
fS is the switching frequency
The total power dissipation is found by summing the power loss for both MOSFETs plus the loss in the internal
regulator.
PD = PD(cond)output1 + PD(SW )output1 + PD(cond)output2 + PD(SW )output2 + VIN ´ Iq
(19)
The temperature rise of the device junction depends on the thermal impedance from junction to the mounting pad
(See the Package Dissipation Ratings table), plus the thermal impedance from the thermal pad to ambient. The
thermal impedance from the thermal pad to ambient depends on the PCB layout (PowerPAD interface to the
PCB, the exposed pad area) and airflow (if any). See the PCB Layout Guidelines, Additional References section.
The operating junction temperature is shown in Equation 20.
TJ = TA + PD ´ qTH(pkg) + qTH(pad-amb)
(
)
(20)
Power Derating
The TPS5438x delivers full current at ambient temperatures up to +85°C if the thermal impedance from the
thermal pad maintains the junction temperature below the thermal shutdown level. At higher ambient
temperatures, the device power dissipation must be reduced to maintain the junction temperature at or below the
thermal shutdown level. Figure 36 illustrates the power derating for elevated ambient temperature under various
airflow conditions. Note that these curves assume that the PowerPAD is properly soldered to the recommended
thermal pad. (See the References section for further information.)
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POWER DISSIPATION
vs
AMBIENT TEMPERATURE
1.8
LFM = 250
1.6
LFM = 500
PD - Power Dissipation - W
1.4
LFM = 0
1.2
LFM = 150
1.0
0.8
0.6
LFM
0
150
250
500
0.4
0.2
0
0
20
40
60
80
100
120
TA - Ambient Temperature - °C
140
Figure 36. Power Derating Curves
PowerPAD Package
The PowerPAD package provides low thermal impedance for heat removal from the device. The PowerPAD
derives its name and low thermal impedance from the large bonding pad on the bottom of the device. The circuit
board must have an area of solder-tinned-copper underneath the package. The dimensions of this area depend
on the size of the PowerPAD package. Thermal vias connect this area to internal or external copper planes and
should have a drill diameter sufficiently small so that the via hole is effectively plugged when the barrel of the via
is plated with copper. This plug is needed to prevent wicking the solder away from the interface between the
package body and the solder-tinned area under the device during solder reflow. Drill diameters of 0.33 mm (13
mils) work well when 1-oz. copper is plated at the surface of the board while simultaneously plating the barrel of
the via. If the thermal vias are not plugged when the copper plating is performed, then a solder mask material
should be used to cap the vias with a diameter equal to the via diameter of 0.1 mm minimum. This capping
prevents the solder from being wicked through the thermal vias and potentially creating a solder void under the
package. (See the Additional References section.)
PCB Layout Guidelines
The layout guidelines presented here are illustrated in the PCB layout examples given in Figure 37 and
Figure 38.
• The PowerPAD must be connected to a low current (signal) ground plane having a large copper surface area
to dissipate heat. Extend the copper surface well beyond the IC package area to maximize thermal transfer of
heat away from the IC.
• Connect the GND pin to the PowerPAD through a 10-mil (.010 in, or 0.0254 mm) wide trace.
• Place the ceramic input capacitors close to PVDD1 and PVDD2; connect using short, wide traces.
• Maintain a tight loop of wide traces from SW1 or SW2 through the switch node, inductor, output capacitor and
rectifier diode. Avoid using vias in this loop.
• Use a wide ground connection from the input capacitor to the rectifier diode, placed as close to the power
path as possible. Placement directly under the diode and the switch node is recommended.
• Locate the bootstrap capacitor close to the BOOT pin to minimize the gate drive loop.
• Locate voltage setting resistors and any feedback components over the ground plane and away from the
switch node and the rectifier diode to input capacitor ground connection.
30
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•
•
•
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Locate snubber components (if used) close to the rectifier diode with minimal loop area.
Locate the BP bypass capacitor very close to the IC; a minimal loop area is recommended.
Locate the output ceramic capacitor close to the inductor output terminal between the inductor and any
electrolytic capacitors, if used.
L2
C18
R8
C14
C17
R6
C13
D2
C19
VOUT2
GND
C15
R7
R4
R9
C16
C8
C12
C11
C6
U1
1
VIN
R2
C10
R5
C1
D1
GND
C7
C3
C4
C9
GND
C5
R3
VOUT1
L1
Figure 37. Top Layer Copper Layout and Component Placement
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Figure 38. Bottom Layer Copper Layout
32
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DESIGN EXAMPLES
Example 1: Detailed Design of a 12-V to 5-V and 3.3-V Converter
The following example illustrates a design process and component selection for a 12-V to 5-V and 3.3-V dual
non-synchronous buck regulator using the TPS54383 converter. Design Example List of Materials and Table 4,
Definition of Symbols is found at the end of this section.
PARAMETER
NOTES AND CONDITIONS
MIN
NOM
MAX
UNIT
6.9
V
INPUT CHARACTERISTICS
VIN
Input voltage
12.0
13.2
IIN
Input current
VIN = nom, IOUT = max
1.6
2.0
A
No load input current
VIN = nom, IOUT = 0 A
12
20
mA
OUTPUT CHARACTERISTICS
VOUT1
Output voltage 1
VIN = nom, IOUT = nom
4.8
5.0
5.2
VOUT2
Output voltage 2
VIN = nom, IOUT = nom
3.2
3.3
3.4
Line regulation
VIN = min to max
1%
Load regulation
IOUT = min to max
1%
Output voltage ripple
VIN = nom, IOUT = max
50
IOUT1
Output current 1
VIN = min to max
0
2.0
IOUT2
Output current 2
VIN = min to max
0
2.0
IOCP1
Output overcurrent channel
1
VIN = nom, VOUT = VOUT1 = 5%
2.4
3
3.5
IOCP2
Output overcurrent channel
2
VIN = nom, VOUT = VOUT2 = 5%
2.4
3
3.5
Transient response ΔVOUT
from load transient
ΔIOUT = 1 A @ 3 A/µs
VOUT(ripple
)
Transient response settling
time
V
mVPP
A
200
mV
1
ms
SYSTEM CHARACTERISTICS
fSW
Switching frequency
η
Full load efficiency
TJ
Operating temperature
range
250
310
370
kHz
60
°C
85%
0
25
+
+
+
Figure 39. Design Example Schematic
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Design Procedure
Duty Cycle Estimation
The first step is to estimate the duty cycle of each switching FET.
VOUT + VFD
VIN(min) + VFD
Dmax »
Dmin »
(21)
VOUT + VFD
VIN(max) + VFD
(22)
Using an assumed forward drop of 0.5 V for a schottky rectifier diode, the Channel 1 duty cycle is approximately
40.1% (minimum) to 48.7% (maximum) while the Channel 2 duty cycle is approximately 27.7% (minimum) to
32.2% (maximum).
Inductor Selection
The peak-to-peak ripple is limited to 30% of the maximum output current. This places the peak current far
enough from the minimum overcurrent trip level to ensure reliable operation.
For both Channel 1 and Channel 2, the maximum inductor ripple current is 600 mA. The inductor size is
estimated in Equation 23.
L min »
VIN(max) - VOUT
1
´ D min ´
ILRIP(max)
fSW
(23)
The inductor values are
• L1 = 18.3 µH
• L2 = 15.3 µH
The next higher standard inductor value of 22 µH is used for both inductors.
The resulting ripple currents are :
IRIPPLE »
VIN(max) - VOUT
1
´ Dmin ´
L
fSW
(24)
Peak-to-peak ripple currents of 0.498 A and 0.416 A are estimated for Channel 1 and Channel 2 respectively.
The RMS current through an inductor is approximated by Equation 25.
IL(rms ) =
(IL(avg) ) + 121 (IRIPPLE )2
2
(25)
and is approximately 2.0 A for both channels.
The peak inductor current is found using:
IL(peak ) » IOUT(max) +
1
IRIPPLE
2
(26)
An inductor with a minimum RMS current rating of 2.0 A and minimum saturation current rating of 2.25 A is
required. A Coilcraft MSS1278-223ML 22-µH, 6.8-A inductor is selected.
Rectifier Diode Selection
A schottky diode is selected as a rectifier diode for its low forward voltage drop. Allowing 20% over VIN for
ringing on the switch node, the required minimum reverse break-down voltage of the rectifier diode is:
34
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V(BR )R(min ) ³ 1.2 ´ VIN
(27)
The diode must have reverse breakdown voltage greater than 15.8 V, therefore a 20-V device is used.
The average current in the rectifier diode is estimated by Equation 28.
ID(avg) » IOUT(max ) ´ (1 - D )
(28)
For this design, 1.2-A (average) and 2.25 A (peak) is estimated for Channel 1 and 1.5-A (average) and 2.21-A
(peak) for Channel 2.
An MBRS320, 20-V, 3-A diode in an SMC package is selected for both channels. This diode has a forward
voltage drop of 0.4 V at 2 A.
The power dissipation in the diode is estimated by Equation 29.
PD (m ax ) » VFM ´ ID (avg )
(29)
For this design, the full load power dissipation is estimated to be 480 mW in D1, and 580 mW in D2.
Output Capacitor Selection
The TPS54383's internal compensation limits the selection of the output capacitors. From Figure 25, the internal
compensation has a double zero resonance at about 3 kHz. The output capacitor is selected by Equation 30.
1
COUT =
2
2
4 ´ p ´ (fRES ) ´ L
(30)
Solving for COUT using
• fRES = 3 kHz
• L = 22 µH
The resulting is COUT = 128 µF. The output ripple voltage of the converter is composed of the ripple voltage
across the output capacitance and the ripple voltage across the ESR of the output capacitor. To find the
maximum ESR allowable to meet the output ripple requirements the total ripple is partitioned, and the equation
manipulated to find the ESR.
ESR(max) =
VRIPPLE(tot) - VRIPPLE(cap)
IRIPPLE
VRIPPLE(tot)
=
IRIPPLE
-
D
fS ´ C OUT
(31)
Based on 128 µF of capacitance, 300-kHz switching frequency and 50-mV ripple voltage plus rounding up the
ripple current to 0.5 A, and the duty cycle to 50%, the capacitive portion of the ripple voltage is 6.5 mV, leaving a
maximum allowable ESR of 87 mΩ.
To meet the ripple voltage requirements, a low-cost 100-µF electrolytic capacitor with 400 mΩ ESR (C5, C17)
and two 10-µF ceramic capacitors (C3 and C4; and C18 and C19) with 2.5-mΩ ESR are selected. From the
datasheets for the ceramic capacitors, the parallel combination provides an impedance of 28 mΩ @ 300 kHz for
14 mV of ripple.
Voltage Setting
The primary feedback divider resistors (R2, R9) from VOUT to FB should be between 10 kΩ and 50 kΩ to
maintain a balance between power dissipation and noise sensitivity. For this design, 20 kΩ is selected.
The lower resistors, R4 and R7 are found using the following equations.
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R4 =
R7 =
•
•
•
•
VFB ´ R2
VOUT1 - VFB
www.ti.com
(32)
VFB ´ R9
VOUT2 - VFB
(33)
R2 = R9 = 20 kΩ
VFB = 0.80 V
R4= 3.80 kΩ (3.83 kΩ standard value is used)
R7= 6.40 kΩ (6.34 kΩ standard value is used)
Compensation Capacitors
Checking the ESR zero of the output capacitors:
fESR(zero) =
•
•
•
1
2 ´ p ´ C ´ ESR
(34)
C = 100 µF
ESR = 400 mΩ
ESR(zero) = 3980 Hz
Since the ESR zero of the main output capacitor is less than 20 kHz, an R-C filter is added in parallel with R4
and R7 to compensate for the electrolytic capacitors' ESR and add a zero approximately 40 kHz.
R5 =
•
•
•
•
•
•
R4
æ æ fZERO(desired)
çç
ç ç fESR(zero)
èè
C8 =
•
•
(35)
fESR(zero) = 4 kHz
fESR(desired) = 40 kHz
R4 = 3.83 kΩ
R5 = 424Ω (422Ω selected)
R7 = 6.34 kΩ
R8 = 702Ω (698Ω selected)
REQ = R5 +
•
•
•
ö ö
÷ - 1÷
÷ ÷
ø ø
1
ææ 1 ö æ 1 öö
çç
÷+ç
÷÷
è è R2 ø è R4 ø ø
(36)
R2 = R9 = 20 kΩ
REQ1 = 3.63 kΩ
REQ2 = 5.51 kΩ
1
2 ´ p ´ REQ ´ fESR(zero)
(37)
C8 = 10.9 nF (10 nF selected)
C15 = 7.22 nF (6800 pF selected)
Input Capacitor Selection
The TPS54383 datasheet recommends a minimum 10-µF ceramic input capacitor on each PVDD pin. These
capacitor must be capable of handling the RMS ripple current of the converter. The RMS current in the input
capacitors is estimated by Equation 38.
36
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2
æ
æ (D I
2
OUTPUTx )
IRMS(outputx) = D ´ ç (IOUTPUTx ) + ç
çç
ç
12
è
è
•
öö
÷÷
÷ ÷÷
øø
(38)
IRMS(CIN) = 0.43 A
One 1210 10-µF, 25 V, X5R ceramic capacitor with 2-mΩ ESR and a 2-A RMS current rating are selected for
each PVDD input. Higher voltage capacitors are selected to minimize capacitance loss at the DC bias voltage to
ensure the capacitors maintain sufficient capacitance at the working voltage.
Boot Strap Capacitor
To ensure proper charging of the high-side FET gate and limit the ripple voltage on the boost capacitor, a 33-nF
boot strap capacitor is used.
ILIM
Current limit must be set above the peak inductor current IL(peak). Comparing IL(peak) to the available minimum
current limits, ILIM is connected to BP for the highest current limit level.
SEQ
The SEQ pin is left floating, leaving the enable pins to function independently. If the enable pins are tied
together, the two supplies start-up ratiometrically. Alternatively, SEQ could be connected to BP or GND to
provide sequential start-up.
Power Dissipation
The power dissipation in the TPS54383 is composed of FET conduction losses, switching losses and internal
regulator losses. The RMS FET current is found using Equation 39.
2
æ
æ (D I
2
OUTPUTx )
IRMS(outputx) = D ´ ç (IOUTPUTx ) + ç
çç
ç
12
è
è
öö
÷÷
÷ ÷÷
øø
(39)
This results in 1.05-A RMS for Channel 1 and 0.87-A RMS for Channel 2.
Conduction losses are estimated by:
2
PCON = RDS(on ) ´ IQSW (rms )
(
)
(40)
Conduction losses of 198 mW and 136 mW are estimated for Channel 1 and Channel 2 respectively.
The switching losses are estimated in Equation 41.
2
PSW
(V
»
IN(max )
) ´ (C
DJ
+ COSS )´ fSW
2
(41)
From the data sheet of the MBRS320, the junction capacitance is 658 pF. Since this is large compared to the
output capacitance of the TPS54x8x the FET capacitance is neglected, leaving switching losses of 17 mW for
each channel.
The regulator losses are estimated in Equation 42.
PREG » IDD ´ VIN(max ) + IBP ´ VIN(max ) - VBP
(
)
(42)
With no external load on BP (IBP=0) the regulator power dissipation is 66 mW.
Total power dissipation in the device is the sum of conduction and switching for both channels plus regulator
losses.
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The total power dissipation is PDISS=0.198+0.136+0.017+0.017+.066 = 434 mW.
Design Example Test Results
The following results are from the TPS54383-001 EVM.
VIN = 12 V
SW 3.3 V
SW 5 V
t − Time − 40 ns/div
Figure 40. Switching Node Waveforms
100
100
VIN = 9.6 V
VIN = 9.6 V
90
90
80
VIN = 13.2 V
70
h - Efficiency - %
70
h - Efficiency - %
80
VIN = 12.0 V
60
50
40
30
VOUT = 5.0 V
20
10
VIN = 12.0 V
50
40
30
VOUT = 3.3 V
VIN (V)
20
VIN (V)
9.6
12.0
13.2
10
9.6
12.0
13.2
0
0
0
38
VIN = 13.2 V
60
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
ILOAD - Load Current - A
ILOAD - Load Current - A
Figure 41. 5.0-V Output Efficiency vs. Load Current
Figure 42. 3.3-V Output Efficiency vs. Load Current
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1.005
1.005
1.004
1.004
VOUT - Output Voltage (Normalized) - V
1.003
VIN = 9.6 V
1.002
VIN = 12.0 V
1.001
1.000
0.999
VOUT = 5.0 V
0.998
VIN = 13.2 V
0.997
VIN (V)
9.6
12.0
13.2
0.996
0.995
VIN = 9.6 V
1.003
1.002
VIN = 13.2 V
1.001
1.000
0.999
0.998
VOUT = 3.3 V
VIN = 12.0 V
0.997
VIN (V)
0.996
9.6
12.0
13.2
0.995
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
IOUT - Load Current - A
Figure 43. 5.0-V Output Voltage vs. Load Current
Figure 44. 3.3-V Output Voltage vs. Load Current
Gain - dB
IOUT - Load Current - A
80
180
60
135
40
90
20
45
0
0
-20
-45
-40
-90
Gain
-60
-80
1k
Phase - °
VOUT - Output Voltage (Normalized) - V
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Phase
5.0 V
3.3 V
-135
10 k
f - Frequency -Hz
100 k
-180
300 k
Figure 45. Example 1 Loop Response
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Table 3. Design Example List of Materials
QTY
VALUE
DESCRIPTION
SIZE
PART NUMBER
MANUFACTURER
1
C1
100 µF
Capacitor, Aluminum, 25V, 20%
E-can
EEEFC1E101P
Panasonic
2
C10, C11
10 µF
Capacitor, Ceramic, 25V, X5R 20%
1210
C3216X5R1E106M
TDK
1
C12
4.7 µF
Capacitor, Ceramic, 10V, X5R 20%
0805
Std
Std
2
C14, C16
470 pF
Capacitor, Ceramic, 25V, X7R, 20%
0603
Std
Std
1
C15
6.8 nF
Capacitor, Ceramic, 25V, X7R, 20%
0603
Std
Std
100 µF
Capacitor, Aluminum, 10V, 20%, FC
Series
F-can
EEEFC1A101P
Panasonic
1
C17, C5
4
C3, C4, C18, C19 10 µF
Capacitor, Ceramic, 6.3V, X5R 20%
0805
C2012X5R0J106M
TDK
1
C8
10 nF
Capacitor, Ceramic, 25V, X7R, 20%
0603
Std
Std
2
C9, C13
0.033 µF
Capacitor, Ceramic, 25V, X7R, 20%
0603
Std
Std
2
D1, D2
MBRS320
Diode, Schottky, 3-A, 30-V
SMC
MBRS330T3
On Semi
MSS1278-153ML
Coilcraft
2
L1, L2
22 µH
Inductor, Power, 6.8A, 0.038 Ω
0.484 x
0.484
2
R2, R9
20 kΩ
Resistor, Chip, 1/16W, 1%
0603
Std
Std
1
R5
422 Ω
Resistor, Chip, 1/16W, 1%
0603
Std
Std
2
R6, R10
10 Ω
Resistor, Chip, 1/16W, 5%
0603
Std
Std
1
R8
698 Ω
Resistor, Chip, 1/16W, 1%
0603
Std
Std
1
R4
3.83 kΩ
Resistor, Chip, 1/16W, 1%
0603
Std
Std
1
R7
6.34 kΩ
Resistor, Chip, 1/16W, 1%
0603
Std
Std
TPS54383 DC-DC Switching Converter
w/ FET
HTSSOP
TPS54383PWP
-14
1
40
REFERENCE
DESIGNATOR
U1
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Table 4. Definition of Symbols
CDJ
Average junction capacitance of the rectifier diode from 0V to VIN(max)
COSS
Average output capacitance of the switching MOSFET from 0V to VIN(max)
COUT
Output Capacitor
D(max)
Maximum steady state operating duty cycle
D(min)
Minimum steady state operating duty cycle
ESR(max)
Maximum allowable output capacitor ESR
fSW
Switching frequency
IBP
Output Current of BP regulator due to external loads
IDD
Switching quiescent current with no load on BP
ID(avg)
Average diode conduction current
ID(peak)
Peak diode conduction current
IIN(avg)
Average input current
IIN(rms)
Root mean squared (RMS) input current
IL(avg)
Average inductor current
IL(rms)
Root mean squared (RMS) inductor current
IL(peak)
Peak current in inductor
ILRIP(max)
Maximum allowable inductor ripple current
L(min)
Minimum inductor value to maintain desired ripple current
IOUT(max)
Maximum designed output current
IRMS(cin)
Root mean squared (RMS) current through the input capacitor
IRIPPLE
Inductor peak to peak ripple current
IQSW(rms)
Root mean squared current through the switching MOSFET
PCON
Power loss due to conduction through switching MOSFET
PD(max)
Maximum power dissipation in diode
RDS(on)
Drain to source resistance of the switching MOSFET when “ON”
PSW
Power loss due to switching
PREG
Power loss due to the internal regulator
VBP
Output Voltage of BP regulator
V(BR)R(min)
Minimum reverse breakdown voltage rating for rectifier diode
VFB
Regulated feedback voltage
VFD
Forward voltage drop across rectifier diode
VIN
Power stage input voltage
VOUT
Regulated output voltage
VRIPPLE(cap)
Peak to Peak ripple voltage due to ideal capacitor (ESR = 0 )
VRIPPLE(tot)
Maximum allowable peak to peak output ripple voltage
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Example 2: 24-V to 12-V and 24-V to 5-V
For a higher input voltage, both a snubber and bootstrap resistors are added to reduce ringing on the switch
node and a 30 V schottky diode is selected. A higher resistance feedback network is chosen for the 12 V output
to reduce the feedback current.
+
+
Figure 46. 24-V to 12-V and 24-V to 5-V Using the TPS54383
VIN = 24 V
IOUT = 2 A
VIN = 24 V
IOUT = 2 A
VOUT
(5 V/div)
VOUT
(5 V/div)
T − Time − 10 ns / div
T − Time − 10 ns / div
Figure 47. Switch Node Ringing Without Snubber and
Boost Resistor
42
Figure 48. Switch Node Ringeing With Snubber and
Boost Resistor
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90
80
VOUT = 5 V
h - Efficiency - %
70
60
VOUT = 12 V
50
40
30
VIN = 24 V
20
VOUT (V)
5
12
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
IOUT - Load Current - A
Figure 49. Efficiency vs. Load Current
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Example 3: 5-V to 3.3V and 5-V to 1.2 V
For a low input voltage application, the TPS54386 is selected for reduced size and all ceramic output capacitors
are used. 22-µF input capacitors are selected to reduce input ripple and lead capacitors are placed in the
feedback to boost phase margin.
Figure 50. 5-V to 3.3V and 5-V to 1.2 V
80
100
80
70
Gain - dB
VOUT = 3.3 V
60
VOUT = 1.2 V
50
40
60
135
40
90
20
45
0
0
-20
-45
-90
30
VIN = 5 V
-40
20
VOUT (V)
-60
Phase
WIth Lead
Without Lead
Gain
1.2
3.3
10
-80
1k
10 k
f - Frequency -Hz
0
0
0.5
1.0
1.5
2.0
2.5
Phase - °
90
h - Efficiency - %
180
VOUT = 1.2 V
100 k
-135
-180
300 k
3.0
IOUT - Load Current - A
Figure 51. Efficiency vs. Load Current
44
Figure 52. Example 3 Loop Response
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ADDITIONAL REFERENCES
Related Devices
The following parts have characteristics similar to the TPS54383/6 and may be of interest.
Table 5. Devices Related to the TPS54383 and TPS54386
TI LITERATURE
NUMBER
DEVICE
SLUS642
TPS40222
5-V Input, 1.6-A Non-Synchronous Buck Converter
SLUS749
TPS54283 /
TPS54286
2-A Dual Non-Synchronous Converter with Integrated High-Side MOSFET
DESCRIPTION
References
These references, design tools and links to additional references, including design software, may be found at
http:www.power.ti.com
Table 6. References
TI LITERATURE
NUMBER
DESCRIPTION
SLMA002
PowerPAD Thermally Enhanced Package Application Report
SLMA004
PowerPAD™ Made Easy
SLUP206
Under The Hood Of Low Voltage DC/DC Converters. SEM1500 Topic 5, 2002 Seminar Series
SLVA057
Understanding Buck Power Stages in Switchmode Power Supplies
SLUP173
Designing Stable Control Loops. SEM 1400, 2001 Seminar Series
Package Outline and Recommended PCB Footprint
The following pages outline the mechanical dimensions of the 14-Pin PWP package and provide
recommendations for PCB layout.
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PACKAGE OPTION ADDENDUM
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7-Nov-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPS54383PWP
ACTIVE
HTSSOP
PWP
14
90
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS54383PWPG4
ACTIVE
HTSSOP
PWP
14
90
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS54383PWPR
ACTIVE
HTSSOP
PWP
14
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS54383PWPRG4
ACTIVE
HTSSOP
PWP
14
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS54386PWPG4
ACTIVE
HTSSOP
PWP
14
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS54386PWPRG4
ACTIVE
HTSSOP
PWP
14
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
7-Nov-2007
TAPE AND REEL BOX INFORMATION
Device
TPS54383PWPR
Package Pins
PWP
14
Site
Reel
Diameter
(mm)
Reel
Width
(mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
SITE 60
330
12
7.0
5.6
1.6
8
Pack Materials-Page 1
W
Pin1
(mm) Quadrant
12
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
7-Nov-2007
Device
Package
Pins
Site
Length (mm)
Width (mm)
Height (mm)
TPS54383PWPR
PWP
14
SITE 60
346.0
346.0
29.0
Pack Materials-Page 2
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