BSS63LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO −100 Vdc Collector −Emitter Voltage RBE = 10 kW VCER Collector Current − Continuous 1 BASE Vdc −110 IC −100 mAdc Symbol Max Unit 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD RqJA 3 mW 225 1.8 mW/°C 556 °C/W 1 2 300 2.4 mW/°C SOT−23 CASE 318 STYLE 6 RqJA 417 °C/W MARKING DIAGRAM TJ, Tstg −55 to +150 °C PD mW Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. BM M G G BM = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device BSS63LT1G Package Shipping† SOT−23 (Pb−free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 5 1 Publication Order Number: BSS63LT1/D BSS63LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max −100 − − −110 − − −110 − − −6.0 − − − − −100 − − −10 − − −200 30 30 − − − − − − −250 − − −900 50 95 − − − 20 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −100 mAdc) V(BR)CEO Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IE = 0, RBE = 10 kW) V(BR)CER Collector −Base Breakdown Voltage (IE = −10 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 mAdc) V(BR)EBO Collector Cutoff Current (VCB = −90 Vdc, IE = 0) ICBO Collector Cutoff Current (VCE = −110 Vdc, RBE = 10 kW) ICER Emitter Cutoff Current (VEB = −6.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc Vdc nAdc mAdc nAdc ON CHARACTERISTICS hFE DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −25 mAdc, VCE = −1.0 Vdc) Collector −Emitter Saturation Voltage (IC = −25 mAdc, IB = −2.5 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −25 mAdc, IB = −2.5 mAdc) VBE(sat) − mVdc mVdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −25 mAdc, VCE = −5.0 Vdc, f = 20 MHz) fT Case Capacitance (IE = IC = 0, VCB = −10 Vdc, f = 1.0 MHz) CC 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://onsemi.com 2 MHz pF BSS63LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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