EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium. Features • • • • Reduces Board Space High hFE, 210−460 (Typical) Low VCE(sat), < 0.5 V These are Pb−Free Devices http://onsemi.com DUAL NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT (6) (5) (4) MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc Symbol Max Unit 357 (Note 1) 2.9 (Note 1) mW mW/°C RqJA 350 (Note 1) °C/W Symbol Max Unit 500 (Note 1) 4.0 (Note 1) mW mW/°C Collector Current − Continuous Tr2 Tr1 (1) (2) (3) THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) 6 PD Total Device Dissipation TA = 25°C Derate above 25°C 1 SOT−563 CASE 463A STYLE 1 PD Thermal Resistance − Junction-to-Ambient RqJA 250 (Note 1) °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad MARKING DIAGRAM 3X M G G 1 3X = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 1 1 Publication Order Number: EMX1DXV6T1/D EMX1DXV6T1, EMX1DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Characteristic V(BR)CBO 60 − − Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0) V(BR)EBO 7.0 − − Vdc Collector-Base Cutoff Current (VCB = 60 Vdc, IE = 0) ICBO − − 0.5 mA Emitter-Base Cutoff Current (VEB = 7.0 Vdc, IB = 0) IEBO − − 0.5 mA − − 0.4 120 − 560 fT − 180 − MHz COB − 2.0 − pF Collector-Emitter Saturation Voltage (Note 2) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) DC Current Gain (Note 3) (VCE = 6.0 Vdc, IC = 1.0 mAdc) Vdc hFE Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) − 2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. ORDERING INFORMATION Package Shipping † EMX1DXV6T1 SOT−563* 4000 Units / Tape & Reel EMX1DXV6T1G SOT−563* 4000 Units / Tape & Reel EMX1DXV6T5 SOT−563* 8000 Units / Tape & Reel EMX1DXV6T5G SOT−563* 8000 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 2 EMX1DXV6T1, EMX1DXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS 1000 160 mA TA = 25°C 50 120 mA 40 100 mA 30 80 mA 60 mA 20 TA = − 25°C 100 40 mA 10 0 IB = 20 mA 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 10 0.1 8 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain 2 900 TA = 25°C 800 COLLECTOR VOLTAGE (mV) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. IC − VCE 1.5 1 0.5 700 600 500 400 TA = 25°C VCE = 5 V 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 0.2 100 1 5 10 20 40 60 80 100 150 200 Figure 4. On Voltage 20 7 6 C ob, CAPACITANCE (pF) 18 16 14 12 10 0.5 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Cib, INPUT CAPACITANCE (pF) VCE = 10 V TA = 25°C TA = 75°C 140 mA DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 60 5 4 3 2 0 1 2 3 1 4 0 10 20 VEB (V) VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 30 40 EMX1DXV6T1, EMX1DXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 5 1 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 4 3 E −Y− HE b 65 PL 0.08 (0.003) DIM A b C D E e L HE C M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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