NSI45060DDT4G Adjustable Constant Current Regulator & LED Driver 45 V, 60 − 100 mA + 15%, 2.7 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs. The CCR is based on patent- pending Self- Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 20% of regulation with only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher currents by attaching a resistor between Radj (Pin 3) and the Cathode (Pin 4). The Radj pin can also be left open (No Connect) if no adjustment is required. It requires no external components allowing it to be designed as a high or low−side regulator. The high anodecathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. This device is available in a thermally robust package, which is lead-free RoHS compliant and uses halogen- free molding compound. For the AEC−Q101 part please see the NSI45060JD datasheet. http://onsemi.com Ireg(SS) = 60 − 100 mA @ Vak = 7.5 V Anode 1 3 Radj 4 Cathode 4 1 2 Features • • • • • • • • • Robust Power Package: 2.7 Watts Adjustable up to 100 mA Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing − Protecting LEDs SBT (Self−Biased Transistor) Technology Negative Temperature Coefficient Eliminates Additional Regulation These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Automobile: Chevron Side Mirror Markers, Cluster, Display & Instrument Backlighting, CHMSL, Map Light • AC Lighting Panels, Display Signage, Decorative Lighting, Channel • • • Lettering Switch Contact Wetting Application Note AND8391/D − Power Dissipation Considerations Application Note AND8349/D − Automotive CHMSL © Semiconductor Components Industries, LLC, 2010 February, 2010 − Rev. 0 1 3 DPAK CASE 369C MARKING DIAGRAM A 1 Radj Y WW NSI60D G YWW NSI 60DG C = Year = Work Week = Specific Device Code = Pb−Free Package ORDERING INFORMATION Device Package NSI45060DDT4G DPAK (Pb−Free) Shipping† 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSI45060DD/D NSI45060DDT4G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Anode−Cathode Voltage Reverse Voltage Operating and Storage Junction Temperature Range ESD Rating: Human Body Model Machine Model Symbol Value Vak Max 45 V VR 500 mV TJ, Tstg −55 to +150 ESD Unit °C Class 2 Class B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Steady State Current @ Vak = 7.5 V (Note 1) Voltage Overhead (Note 2) Symbol Min Typ Max Unit Ireg(SS) 51 60 69 mA 76.95 mA Voverhead 1.8 Ireg(P) Capacitance @ Vak = 7.5 V (Note 4) C 17 pF Capacitance @ Vak = 0 V (Note 4) C 70 pF 1. 2. 3. 4. 54.7 66 V Pulse Current @ Vak = 7.5 V (Note 3) Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 80 sec, using FR−4 @ 300 mm2 2 oz. Copper traces, in still air. Voverhead = Vin − VLEDs. Voverhead is typical value for 65% Ireg(SS). Ireg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec. f = 1 MHz, 0.02 V RMS. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 1771 14.16 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 70.6 °C/W Thermal Reference, Junction−to−Lead 4 (Note 5) RψJL4 PD 6.8 °C/W 2083 16.67 mW mW/°C Total Device Dissipation (Note 5) TA = 25°C Derate above 25°C Total Device Dissipation (Note 6) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 60 °C/W Thermal Reference, Junction−to−Lead 4 (Note 6) RψJL4 PD 6.3 °C/W 2080 16.64 mW mW/°C RθJA 60.1 °C/W RψJL4 PD 6.5 °C/W 2441 19.53 mW mW/°C RθJA 51.2 °C/W RψJL4 PD 5.9 °C/W 2309 18.47 mW mW/°C 54.1 °C/W Total Device Dissipation (Note 7) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 7) Thermal Reference, Junction−to−Lead 4 (Note 7) Total Device Dissipation (Note 8) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 8) Thermal Reference, Junction−to−Lead 4 (Note 8) Total Device Dissipation (Note 9) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 9) RθJA Thermal Reference, Junction−to−Lead 4 (Note 9) RψJL4 PD Total Device Dissipation (Note 10) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 10) Thermal Reference, Junction−to−Lead 4 (Note 10) Junction and Storage Temperature Range 6.2 °C/W 2713 21.71 mW mW/°C RθJA 46.1 °C/W RψJL4 TJ, Tstg 5.7 °C/W −55 to +150 °C NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical measurements and method of attachment. 5. FR−4 @ 300 mm2, 1 oz. copper traces, still air. 6. FR−4 @ 300 mm2, 2 oz. copper traces, still air. 7. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 8. FR−4 @ 500 mm2, 2 oz. copper traces, still air. 9. FR−4 @ 700 mm2, 1 oz. copper traces, still air. 10. FR−4 @ 700 mm2, 2 oz. copper traces, still air. http://onsemi.com 2 NSI45060DDT4G TYPICAL PERFORMANCE CURVES Minimum FR−4 @ 300 mm2, 2 oz Copper Trace, Still Air 60 50 40 30 20 10 0 −10 TA = 25°C, Radj = Open Ireg(P), PULSE CURRENT (mA) −20 −10 0 10 20 30 40 60 50 80 Ireg(SS), STEADY STATE CURRENT (mA) 70 70 70 TA = −40°C 60 TA = 25°C 30 [ −0.113 mA/°C typ @ Vak = 7.5 V 20 10 0 DC Test Steady State, Still Air, Radj = Open 0 1 2 3 4 5 6 7 8 9 10 Vak, ANODE−CATHODE VOLTAGE (V) Figure 1. General Performance Curve for CCR Figure 2. Steady State Current (Ireg(SS)) vs. Anode−Cathode Voltage (Vak) TA = 25°C Non−Repetitive Pulse Test 4.0 5.0 6.0 7.0 8.0 9.0 70 10 Vak @ 7.5 V TA = 25°C 68 66 64 62 60 58 56 54 52 50 54 Vak, ANODE−CATHODE VOLTAGE (V) 56 58 60 62 64 66 68 70 72 74 76 78 Ireg(P), PULSE CURRENT (mA) Figure 3. Pulse Current (Ireg(P)) vs. Anode−Cathode Voltage (Vak) Figure 4. Steady State Current vs. Pulse Current Testing 66 100 Ireg(SS), STEADY STATE CURRENT (mA) Ireg, CURRENT REGULATION (mA) [ −0.106 mA/°C typ @ Vak = 7.5 V TA = 125°C 40 Vak, ANODE−CATHODE VOLTAGE (V) 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 3.0 Vak @ 7.5 V TA = 25°C Radj = Open 65 64 63 62 61 60 59 [ −0.179 mA/°C typ @ Vak = 7.5 V TA = 85°C 50 Ireg(SS), STEADY STATE CURRENT (mA) Ireg, CURRENT REGULATION (mA) 80 0 10 20 30 40 50 60 70 80 90 Vak @ 7.5 V TA = 25°C 90 80 70 60 50 1 TIME (s) 10 100 Radj (W) Figure 6. Ireg(SS) vs. Radj Figure 5. Current Regulation vs. Time http://onsemi.com 3 1000 POWER DISSIPATION (mW) NSI45060DDT4G 4200 700 mm2/2 oz 3900 3600 500 mm2/2 oz 3300 3000 2700 300 mm2/2 oz 2400 2100 1800 700 mm2/1 oz 1500 1200 500 mm2/1 oz 900 600 300 mm2/1 oz 300 40 100 −40 −20 0 20 60 80 120 TA, AMBIENT TEMPERATURE (°C) Figure 7. Power Dissipation vs. Ambient Temperature @ TJ = 1505C APPLICATIONS D1 Anode D1 Q1 Cathode + − Q2 Radj LED Vin HF3−R5570 Qx Radj LED HF3−R5570 Anode Q1 Cathode Radj LED + − HF3−R5570 Vin Q2 Radj Qx Radj LED HF3−R5570 LED HF3−R5570 LED HF3−R5570 LED HF3−R5570 LED HF3−R5570 LED LED HF3−R5570 HF3−R5570 LED LED HF3−R5570 HF3−R5570 Figure 8. Typical Application Circuit (30 mA each LED String) Figure 9. Typical Application Circuit (90 mA each LED String) Number of LED’s that can be connected is determined by: D1 is a reverse battery protection diode LED’s = ((Vin − QX VF − D1 VF)/LED VF) Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.2 Vdc @ 30 mA (12 Vdc − 4.2 Vdc)/2.2 Vdc = 3 LEDs in series. Number of LED’s that can be connected is determined by: D1 is a reverse battery protection diode Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.6 Vdc @ 90 mA (12 Vdc − (3.5 + 0.7 Vdc))/2.6 Vdc = 3 LEDs in series. Number of Drivers = LED current/30 mA 90 mA/30 mA = 3 Drivers (Q1, Q2, Q3) http://onsemi.com 4 Radj NSI45060DDT4G Comparison of LED Circuit using CCR vs. Resistor Biasing ON Semiconductor CCR Design Resistor Biased Design Constant brightness over full Supply Voltage (more efficient), see Figure 10 Large variations in brightness over full Automotive Supply Voltage Little variation of power in LEDs, see Figure 11 Large variations of current (power) in LEDs Constant current extends LED strings lifetime, see Figure 10 High Supply Voltage/ Higher Current in LED strings limits lifetime Current decreases as voltage increases, see Figure 10 Current increases as voltage increases Current supplied to LED string decreases as temperature increases (self-limiting), see Figure 2 LED current decreases as temperature increases Single resistor is used for current select Requires costly inventory (need for several resistor values to match LED intensity) Fewer components, less board space required More components, more board space required Surface mount component Through-hole components 80 600 TA = 25°C 70 Circuit Current with CCR Device 60 Pd LEDs (mW) 500 I (mA) 50 Circuit Current with 125 W 40 30 Representative Test Data for Figure 8 Circuit, Current of LEDs, FR−4 @ 300 mm2, 2 oz Copper Area 20 10 0 9 10 11 TA = 25°C 12 13 14 15 LED Power with CCR Device 400 300 LED Power with 125 W 200 Representative Test Data for Figure 8 Circuit, Pd of LEDs, FR−4 @ 300 mm2, 2 oz Copper Area 100 0 16 9 10 11 12 13 14 Vin (V) Vin (V) Figure 10. Series Circuit Current Figure 11. LED Power Current Regulation: Pulse Mode (Ireg(P)) vs DC Steady-State (Ireg(SS)) 15 16 Ireg(SS) for stated board material, size, copper area and copper thickness. Ireg(P) will always be greater than Ireg(SS) due to the die temperature rising during Ireg(SS). This heating effect can be minimized during circuit design with the correct selection of board material, metal trace size and weight, for the operating current, voltage, board operating temperature (TA) and package. (Refer to Thermal Characteristics table). There are two methods to measure current regulation: Pulse mode (Ireg(P)) testing is applicable for factory and incoming inspection of a CCR where test times are a minimum. (t < 300 ms). DC Steady-State (Ireg(SS)) testing is applicable for application verification where the CCR will be operational for seconds, minutes, or even hours. ON Semiconductor has correlated the difference in Ireg(P) to http://onsemi.com 5 NSI45060DDT4G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE C −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D 2 PL G 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− T RECOMMENDED FOOTPRINT 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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