ONSEMI NTD5407N

NTD5407N
Power MOSFET
40 V, 38 A, Single N−Channel, DPAK
Features
•
•
•
•
Low RDS(on)
High Current Capability
Low Gate Charge
These are Pb−Free Devices
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Applications
• Electronic Brake Systems
• Electronic Power Steering
• Bridge Circuits
V(BR)DSS
RDS(ON) TYP
ID MAX
(Note 1)
40 V
21 mΩ @ 10 V
38 A
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
38
A
Continuous Drain
Current − RJC (Note 1)
Steady
State
TC = 100°C
Power Dissipation −
RJC (Note 1)
Steady
State
TC = 25°C
Pulsed Drain Current
TC = 25°C
PD
75
W
MARKING
DIAGRAM
4
tp = 10 s
Source Current (Body Diode)
Single Pulse Drain−to Source Avalanche
Energy − (VDD = 50 V, VGS = 10 V, IPK = 17 A,
L = 1 mH, RG = 25 )
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
75
A
TJ,
TSTG
−55 to
175
°C
IS
36
A
EAS
150
mJ
TL
260
°C
1
1 2
YWW
54
07NG
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS (Note 1)
Junction−to−Case (Drain)
S
27
Operating Junction and Storage Temperature
Parameter
G
DPAK
CASE 369C
STYLE 2
Y
WW
5407N
G
ORDERING INFORMATION
Device
Symbol
Max
Units
RθJC
2.0
°C/W
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
= Year
= Work Week
= Specific Device Code
= Pb−Free Device
Package
Shipping†
NTD5407NG
DPAK
(Pb−Free)
75 Units / Rail
NTD5407NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 0
1
Publication Order Number:
NTD5407N/D
NTD5407N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 A
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
39
IDSS
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 100°C
10
IGSS
VDS = 0 V, VGS = ±30 V
VGS(TH)
VGS = VDS, ID = 250 A
±100
A
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
1.5
3.5
−6.0
RDS(on)
gFS
V
mV/°C
VGS = 10 V, ID = 20 A
21
26
VGS = 5.0 V, ID = 10 A
32
40
VGS = 10 V, ID = 18 A
15
m
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
615
VGS = 0 V, f = 1.0 MHz,
VDS = 32 V
QGS
Gate−to−Drain Charge
QGD
pF
173
80
QG(TOT)
Gate−to−Source Charge
1000
nC
20
VGS = 10 V, VDS = 32 V,
ID = 38 A
2.25
10.5
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
6.8
tr
VGS = 10 V, VDD = 32 V,
ID = 38 A, RG = 2.5 td(OFF)
tf
ns
17
66
51
SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
10
tr
VGS = 5 V, VDD = 20 V,
ID = 20 A, RG = 2.5 td(OFF)
tf
ns
175
13
23
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.9
TJ = 125°C
0.75
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 5.0 A
38
VGS = 0 V, dIS/dt = 100 A/s,
IS = 15 A
QRR
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2
V
ns
20.5
17
40
2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.1
nC
NTD5407N
TYPICAL PERFORMANCE CURVES
VGS = 7 V to 10 V
60
TJ = 25°C
VDS ≥ 10 V
6V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
60
50
5.5 V
40
5V
30
4.5 V
20
4V
10
50
40
30
20
TJ = 100°C
10
TJ = 25°C
3.5 V
0
TJ = −55°C
0
0
2
1
3
5
4
6
7
9
8
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.08
ID = 38 A
TJ = 25°C
0.07
0.06
0.05
0.04
0.03
0.02
0.01
3
5
4
6
7
8
9
10
11
12
0.105
TJ = 25°C
0.095
0.085
0.075
0.065
VGS = 5 V
0.055
0.045
0.035
VGS = 10 V
0.025
0.015
0.005
10
15
25
35
30
40
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
10000
2
ID = 20 A
VGS = 10 V
VGS = 0 V
TJ = 175°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
20
ID, DRAIN CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1.8
8
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 1. On−Region Characteristics
3
5
6
7
1
2
4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1.6
1.4
1.2
1
1000
100
10
TJ = 100°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
1
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTD5407N
TYPICAL PERFORMANCE CURVES
VGS = 0 V
TJ = 25°C
Ciss
1200
Crss
Ciss
600
Coss
0
10
Crss
5
VGS
0
VDS
5
10
15
20
25
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
VDS = 0 V
15
35
12
28
QT
9
VDS
QGS
6
7
5
10
15
QG, TOTAL GATE CHARGE (nC)
0
t, TIME (ns)
IS, SOURCE CURRENT (AMPS)
1000
tr
td(on)
10
1
1
10
RG, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
0
20
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
21
14
ID = 36 A
TJ = 25°C
0
30
td(off)
tf
QGD
3
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VDS = 32 V
ID = 38 A
VGS = 10 V
VGS
15
14 VGS = 0 V
13 TJ = 25°C
12
11
10
9
8
7
6
5
4
3
2
1
0
0.3
0.9
0.6
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.2
Figure 10. Diode Forward Voltage vs. Current
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4
V DS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1800
NTD5407N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD5407N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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6
For additional information, please contact your
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NTD5407N/D