NTMFS4122N Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead Features •Low RDS(on) •Low Inductance SO-8 Package •This is a Pb-Free Device http://onsemi.com Applications V(BR)DSS •Notebooks, Graphics Cards •DC-DC Converters •Synchronous Rectification 4.6 mW @ 10 V 30 V Parameter D Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS $20 V ID 14 A Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 10 t v10 s TA = 25°C 23 Steady State PD Steady State Power Dissipation (Note 2) Pulsed Drain Current 2.2 S W MARKING DIAGRAM 5.8 TA = 25°C ID TA = 85°C 9.1 0.9 W IDM 68 A TJ, Tstg -55 to 150 °C IS 7.0 A EAS 220 mJ TL 260 °C Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 21 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Symbol Value Unit Junction-to-Ambient - Steady State (Note 1) RqJA 56.3 °C/W Junction-to-Ambient - t v10 s (Note 1) RqJA 21.5 Junction-to-Ambient - Steady State (Note 2) RqJA 141.6 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0264 in sq). © Semiconductor Components Industries, LLC, 2007 SO-8 FLAT LEAD CASE 488AA STYLE 1 D 4122N AYWWG G D D 4122N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS Parameter S S S G 1 PD tp = 10 ms D A 6.5 TA = 25°C Operating Junction and Storage Temperature July, 2007 - Rev. 4 G TA = 25°C t v10 s Continuous Drain Current (Note 2) 23 A 6.3 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Continuous Drain Current (Note 1 ) ID MAX (Note 1) RDS(on) TYP 1 Device Package Shipping† NTMFS4122NT1G SO-8 FL (Pb-Free) 1500 Tape & Reel NTMFS4122NT3G SO-8 FL (Pb-Free) 5000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: NTMFS4122N/D NTMFS4122N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage T emperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 23 VGS = 0 V, VDS = 24 V TJ = 25°C 1.0 TJ = 125°C IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mV/°C mA 10 100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance Forward Transconductance RDS(on) gFS 1.0 2.5 6.6 VGS = 10 V, ID = 14 A V mV/°C 4.6 6.0 mW VGS = 4.5 V, ID = 12 A 6.3 8.5 VDS = 15 V, ID = 10 A 13.2 S 2310 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 24 V 460 263 QG(TOT) 20 Threshold Gate Charge QG(TH) 3.0 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 8.1 RG 0.7 W td(ON) 20 ns Gate Resistance VGS = 4.5 V, VDS = 15 V, ID = 12 A 30 nC Total Gate Charge 6.7 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 1.0 A, RL = 15 W, RG = 3.0 W tf 20 30 31 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.75 TJ = 125°C 0.6 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 7.0 A 28 VGS = 0 V, dIS/dt = 100 A/ms, IS = 7.0 A QRR http://onsemi.com 2 V ns 14 14 23 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 1.0 nC NTMFS4122N TYPICAL PERFORMANCE CURVES 24 20 18 16 VGS = 3.4 V to 10 V 3.2 V 14 3.1 V 12 10 8 3.0 V 6 4 2.8 V 2 0 2.6 V 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) TJ = 25°C 3.3 V 0.5 1.5 1 2 16 14 12 10 8 6 TJ = 125°C 4 2 0 3 2.5 VDS = 30 V 22 20 18 TJ = 25°C TJ = -55°C VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 3 2 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 24 22 0.008 VGS = 10 V 0.007 0.006 TJ = 125°C 0.005 0.004 TJ = 25°C 0.003 0.002 TJ = -55°C 0.001 0 2 4 6 8 10 0.008 TJ = 25°C 0.007 VGS = 4.5 V 0.006 0.005 0.004 VGS = 10 V 0.003 0.002 5 10 1.8 30 VGS = 0 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 25 10000 ID = 14 A VGS = 10 V 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 20 Figure 4. On-Resistance vs. Drain Current and Gate Voltage Figure 3. On-Resistance vs. Drain Current 1.6 15 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 1.7 5 TJ = 150°C 1000 100 TJ = 100°C 10 -25 0 25 50 75 100 125 150 3 6 9 12 15 18 21 24 27 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTMFS4122N TYPICAL PERFORMANCE CURVES Ciss 2000 1500 1000 Coss 500 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 2500 VGS = 0 V TJ = 25°C 20 5 QT 4 VDS 16 QGS QGD 3 12 2 8 4 1 ID = 12 A TJ = 25°C Crss 0 0 0 5 10 15 20 25 25 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 5 Figure 7. Capacitance Variation 0 25 8 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1 A VGS = 4.5 V 100 tf td(on) td(off) tr 1 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V TJ = 25°C 6 4 2 0 0.4 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 10 10 ms 100 ms 1 ms 1 0.1 10 ms VGS = 20 V SINGLE PULSE TC = 25°C dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1.0 Figure 10. Diode Forward Voltage vs. Current 100 ID, DRAIN CURRENT (AMPS) t, TIME (ns) 10 15 20 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 1000 10 VGS VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3000 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTMFS4122N PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA-01 ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 6 2X 0.20 C 5 4X E1 q E 2 c 1 2 3 A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --4.22 6.15 BSC 5.50 5.80 6.10 3.45 --4.30 1.27 BSC 0.51 0.61 0.71 0.51 ----0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --12 _ 0.10 C SOLDERING FOOTPRINT* SIDE VIEW 8X DETAIL A b 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN e/2 L 1 4 K 1.000 0.965 1.330 2X 0.905 2X 0.495 E2 L1 6 G M 4.530 3.200 0.475 5 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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