ONSEMI NTS4409N

NTS4409N
Small Signal MOSFET
25 V, 0.75 A, Single, N−Channel,
ESD Protection, SC−70/SOT−323
Features
• Advance Planar Technology for Fast Switching, Low RDS(on)
• Higher Efficiency Extending Battery Life
• This is a Pb−Free Device
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V(BR)DSS
RDS(on) Typ
ID Max
249 mW @ 4.5 V
25 V
Applications
0.75 A
299 mW @ 2.7 V
• Boost and Buck Converter
• Load Switch
• Battery Protection
SC−70 (3−Leads)
Gate
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
25
V
Gate−to−Source Voltage
VGS
"8.0
V
Drain Current
Continuous Drain Current
(Note 1)
t<5s
TA = 25°C
ID
0.75
A
Steady
State
TA = 25°C
ID
0.7
A
TA = 75°C
Source
PD
0.28
W
Power Dissipation (Note 1)
tv5s
PD
0.33
W
tp = 10 ms
IDM
3.0
A
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode) (Note 1)
IS
0.3
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
250
V
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
450
°C/W
Junction−to−Ambient − t v 5 s (Note 1)
RqJA
375
ESD Rating − Machine Model
Drain
2
Top View
Steady State
Operating Junction and Storage Temperature
3
0.6
Power Dissipation (Note 1)
Pulsed Drain Current
1
MARKING DIAGRAM &
PIN ASSIGNMENT
3
3
Drain
1
2
T4 WG
G
SC−70/SOT−323
CASE 419
STYLE 8
1
Gate
2
Source
THERMAL RESISTANCE RATINGS
Rating
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
T4
= Device Code
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping †
NTS4409NT1G
SOT−323
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
Publication Order Number:
NTS4409N/D
NTS4409N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
25
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
V
30
IDSS
VGS = 0 V,
VDS = 20 V
TJ = 25°C
0.5
TJ = 70°C
2.0
TJ = 125°C
Gate−to−Source Leakage Current
mV/°C
IGSS
VDS = 0 V, VGS = 8.0 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
5.0
100
nA
1.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
0.65
−2.0
mV/°C
VGS = 4.5 V, ID = 0.6 A
249
350
VGS = 2.7 V, ID = 0.2 A
299
400
VGS = 4.5 V, ID = 1.2 A
260
VDS = 5.0 V, ID = 0.5 A
0.5
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
49
60
22.4
30
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
8.0
12
Total Gate Charge
QG(TOT)
1.2
1.5
Threshold Gate Charge
QG(TH)
VGS = 4.5 V, VDS = 15 V,
ID = 0.8 A
pF
nC
0.2
Gate−to−Source Charge
QGS
0.28
0.50
Gate−to−Drain Charge
QGD
0.3
0.40
td(ON)
5.0
12
8.2
8.0
23
35
41
60
0.82
1.20
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 0.7 A, RG = 51 W
tf
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 0.6 A
TJ = 25°C
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
V
NTS4409N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
3.2
ID, DRAIN CURRENT (AMPS)
3V
2.5 V
VGS = 2 V
1.6
0.8
VGS = 1.5 V
0.8
VDS ≥ 10 V
2.4
1.6
0.8
25°C
TJ = 125°C
0
0.5
1.5
1
2.5
2
3
0
0.8
1.6
3.2
2.4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.8
VGS = 4.5 V
0.6
TJ = 125°C
0.4
TJ = 25°C
0.2
0
3.2
0.8
1.6
2.4
ID, DRAIN CURRENT (AMPS)
0.6
TJ = 125°C
0.4
TJ = 25°C
TJ = −55°C
0
0
0.8
1.6
2.4
ID, DRAIN CURRENT (AMPS)
100
2
TJ = 25°C
VGS = 0 V
ID = 0.75 A
1.8
VGS = 2.5 V
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
3.2
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.6
1.4
VGS = 4.5 V
1.2
1
80
60
Ciss
40
Coss
20
0.8
0.6
−50
4
VGS = 2.5 V
0.2
TJ = −55°C
0
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
4.5 V
2.4
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
3.2
TJ = 25°C
8V
Crss
0
−25
0
25
50
75
100
125
150
0
5
10
15
20
TJ, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
25
NTS4409N
3.2
5
QG(TOT)
IS, SOURCE CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4
VGS
3
QGS
2
QGD
1
ID = 0.8 A
TJ = 25°C
0
0
0.2
0.4
0.6
0.8
1.0
Qg, TOTAL GATE CHARGE (nC)
2.4
1.6
0.8
TJ = 125°C
TJ = 25°C
0
1.4
1.2
VGS = 0 V
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
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4
1.2
NTS4409N
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
2
b
e
A
0.05 (0.002)
c
A2
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
L
A1
MIN
0.80
0.00
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
NTS4409N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTS4409N/D