2SA1011P / 2SC2344P Ordering number : EN8522 SANYO Semiconductors DATA SHEET 2SA1011P / 2SC2344P PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Specifications ( ) : 2SA1011P Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)180 V Collector-to-Emitter Voltage VCEO (--)160 V Emitter-to-Base Voltage VEBO (--)6 V (--)1.5 A Collector Current IC Collector Current (Pulse) Collector Dissipation ICP PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C (--)3 A 30 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO Gain-Bandwidth Product hFE fT Output Capacitance Cob Base-to-Emitter Voltage VBE Conditions Ratings min typ max VCB=(--)120V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)300mA VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz 60* Collector-to-Emitter Saturation Voltage VCE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, IE=0A IC=(--)1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)1mA, IC=0A (--)10 µA (--)10 µA 200* 100 MHz (30)23 VCE=(--)5A, IC=(--)10mA IC=(--)500mA, IB=(--)50mA Unit pF (--)1.5 (--0.5)0.3 V V (--)180 V (--)160 V (--)6 V Continued on next page. * : The 2SA1011P/2SC2344P are classified by 300mA hFE as follows : Rank D E hFE 60 to 120 100 to 200 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62707DA TI IM TC-00000697 No.8522-1/4 2SA1011P / 2SC2344P Continued from preceding page. Parameter Symbol Turn-On Time ton tstg tf Storage Time Fall Time Ratings Conditions min typ See specified Test Circuit. (0.29)0.15 µs See specified Test Circuit. (0.48)0.81 µs See specified Test Circuit. (0.19)0.48 µs Package Dimensions Switching Time Test Circuit unit : mm (typ) 7507-001 IB1 PW=20µs 4.5 10.2 3.6 40Ω 200VR 51Ω VCC=20V 15.1 2.7 OUTPUT IB2 1Ω INPUT 1.3 6.3 5.1 18.0 1µF 1µF (5.6) VBE=--2V IC=10IB1=--10IB2=0.5A For PNP, minus sign is omitted. 14.0 1.2 0.8 0.4 1 2 3 1 : Base 2 : Collector 3 : Emitter 2.7 2.55 2.55 SANYO : TO-220 IC -- VCE --1.0 IC -- VCE 1.0 A --8m --7mA --6mA --0.8 --0.6 2SC2344P Collector Current, IC -- A Collector Current, IC -- A 2SA1011P --5mA --4mA --0.4 --3mA --2mA A 8m 7mA 6mA 0.8 5mA 0.6 4mA 0.4 3mA 2mA 0.2 --0.2 1mA --1mA IB=0mA 0 0 --10 --20 --30 0 --50 10 20 30 40 50 Collector to Emitter Voltage, VCE -- V IT02132 IC -- VBE --2.4 IB=0mA 0 --40 Collector to Emitter Voltage, VCE -- V IT02133 IC -- VBE 2.4 2SA1011P VCE= --5V 2SC2344P VCE=5V --2.0 --0.4 75 °C 1.2 0.8 0.4 0 25 ° C Ta= --25 °C 5° C --0.8 25° C Ta= --25 °C 75 °C --1.2 1.6 5° C --1.6 12 Collector Current, IC -- A 2.0 12 Collector Current, IC -- A Unit max 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base to Emitter Voltage, VBE -- V --1.2 --1.4 IT02134 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE -- V 1.2 1.4 IT02135 No.8522-2/4 2SA1011P / 2SC2344P hFE -- IC 1000 7 5 125°C 100 7 5 25°C Ta= --25°C 3 2 10 7 5 3 100 25°C 7 5 Ta= --25°C 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 5 7 0.01 Output Capacitance, Cob -- pF 1P 2SA101 3 2 10 7 5 3 5 7 0.01 2 3 5 7 0.1 2 3 Collector Current, IC -- A 2 10 7 5 7 2 10 3 5 ASO ICP=3A IC=1.5A ms 100 1.0 7 5 3 2 ms 10 Collector Current, IC -- A 7 100 IT02139 s 23 2SC 7 5 5 ion 44P 3 1m 1P 2 rat 3 (For PNP minus sign is omitted) ope 7 5 2SA1 011P 2SC2 344P 3 DC 1.0 0.1 5 5 3 2 101 3 IT02137 7 2 2SA 2 100 5 3 2 7 1.0 Collector to Base Voltage, VCB -- V IC / IB=10 7 5 5 Cob -- VCB 2 1.0 5 7 1.0 IT02138 VCE(sat) -- IC 10 3 2 3 (For PNP minus sign is omitted) 2 2 f=1MHz 344P 3 0.001 7 0.1 3 2SC2 5 5 5 2 7 3 Collector Current, IC -- A VCE=10V 100 2 IT02136 f T -- IC 3 Gain-Bandwidth Product, f T -- MHz 125°C 2 2 7 --0.01 Collector to Emitter Saturation Voltage, VCE(sat) -- V 2SC2344P VCE=5V 75°C 3 75°C 2 DC Current Gain, hFE DC Current Gain, hFE 3 hFE -- IC 1000 7 5 2SA1011P VCE= --5V 0.1 7 5 3 2 3 2 0.01 (For PNP minus sign is omitted) 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT02140 0.01 1.0 (For PNP minus sign is omitted) 2 3 5 7 10 2 3 5 7 100 2 IT02141 Collector to Emitter Voltage, VCE -- V No.8522-3/4 2SA1011P / 2SC2344P SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No.8522-4/4