SANYO 2SC4919-S

2SC4919-S
Ordering number : ENA1086
SANYO Semiconductors
DATA SHEET
2SC4919-S
NPN Epitaxial Planar Silicon Transistor
Muting Circuit Applications
Features
•
•
•
•
Ultrasmall-sized package permitting applied sets to be made small and slim.
Small output capacitance.
Low collector-to-emitter saturation voltage.
Low ON resistance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
25
V
Collector-to-Emitter Voltage
VCBO
VCEO
15
V
Emitter-to-Base Voltage
VEBO
15
V
IC
100
mA
Collector Current (Pulse)
ICP
200
mA
Base Current
IB
PC
20
mA
150
mW
150
°C
--55 to +150
°C
Collector Current
Collector Dissipation
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=15V, IE=0A
0.1
μA
Emitter Cutoff Current
IEBO
hFE
VEB=4V, IC=0A
0.1
μA
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
fT
VCE=2V, IC=5mA
VCE=5V, IC=10mA
Cob
VCB=10V, f=1MHz
800
3200
240
MHz
1.4
pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70208LA TI IM TC-00001496 No. A1086-1/4
2SC4919-S
Continued from preceding page.
Parameter
Symbol
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
min
typ
IC=10mA, IB=1mA
IC=10mA, IB=1mA
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=10μA, IE=0A
IC=1mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Ron
IE=10μA, IC=0A
IB=3mA, f=1MHz
On Resistance
Ratings
Conditions
Unit
max
14
30
0.74
1.1
mV
V
25
V
15
V
15
V
0.9
Ω
Package Dimensions
unit : mm (typ)
7029-002
Top View
0.3
1.4
0.25
1.4
0.8
3
2
1
0.1
0.3
0.2
3
1 : Base
2 : Emitter
3 : Collector
0.07
2
1
0.07
0.6
0.45
SANYO : SSFP
Bottom View
IC -- VCE
μA 0μA
160 14
A
0μ
18
Collector Current, IC -- mA
80
IC -- VCE
10
A
120μ
A
μ
100
80μA
200μA
Collector Current, IC -- mA
100
60μA
60
40μA
40
20μA
20
8
5.0μA
4.5μA
6
4.0μA
3.5μA
3.0μA
2.5μA
2.0μA
1.5μA
4
1.0μA
2
0.5μA
0
IB=0μA
0
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE -- V ITR07753
0
IB=0μA
0
1
2
3
4
5
Collector-to-Emitter Voltage, VCE -- V ITR07754
No. A1086-2/4
2SC4919-S
IC -- VBE
120
Ta=75°C
DC Current Gain, hFE
2
80
40
25°C
--25°C
60
Ta=75°
C
Collector Current, IC -- mA
VCE=2V
3
100
0
0
0.6
0.4
0.2
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
7
5
3
100
1.2
7
2
1.0
3
5
7
5
3
2
10
7
Collector Current, IC -- mA
ITR07755
f T -- IC
1000
f=1MHz
Output Capacitance, Cob -- pF
7
5
3
2
100
7
5
5
3
2
1.0
7
5
7 1.0
2
3
5
7
2
10
3
5
Collector Current, IC -- mA
3
7 100
2
ITR07757
7
2
1.0
3
7
5
2
10
5
ITR07758
VBE(sat) -- IC
3
IC / IB=10
IC / IB=10
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
2
100
7
5
°C
25
3
2
75
=
Ta
°C
10
C
5°
--2
7
5
3
7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Ta= --25°C
7
75°C
5
3
2
0.1
5
5 7 100 2
ITR07759
10
IB
7
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100 2
ITR07760
PC -- Ta
150
140
OUT
10kΩ
Collector Dissipation, PC -- mW
IN
2
160
1kΩ
f=1MHz
7 0.1
Collector Current, IC -- mA
Ron -- IB
2
5
3
2
1.0
7
120
100
80
60
40
20
5
3
25°C
1.0
7
Collector Current, IC -- mA
ON Resisitance, Ron -- Ω
2
100
ITR07756
Cob -- VCB
10
VCE=5V
7
3
25°C
--25°C
1000
2
20
Gain-Brandwidth Product, f T -- MHz
hFE -- IC
5
VCE=2V
7
0.1
2
3
5
7
1.0
Base Current, IB -- mA
2
3
5
7
ITR07761
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR07762
No. A1086-3/4
2SC4919-S
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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This catalog provides information as of July, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1086-4/4