SANYO 2SK2624FS

2SK2624FS
Ordering number : ENA1320
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK2624FS
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-reisitance.
Low Qg.
Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
Conditions
Ratings
VDSS
VGSS
ID
IDP
Unit
600
PW≤10μs, duty cycle≤1%
V
±30
V
3.5
A
12
A
2.0
W
Allowable Power Dissipation
PD
25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *2
EAS
IAV
49
mJ
3
A
Avalanche Current *3
Tc=25°C (SANYO’s ideal heat dissipation condition)*1
Note : *1 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=50V, L=10mH, IAV=3A
*3 L≤10mH, Single pulse
Marking : K2624
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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O2208QB MS IM TC-00001659 No. A1320-1/5
2SK2624FS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Conditions
Ratings
min
typ
Unit
max
V(BR)DSS
IDSS
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1.8A, VGS=15V
2.0
Input Capacitance
Ciss
VDS=20V, f=1MHz
550
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
165
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
85
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
17
ns
Rise Time
tr
See specified Test Circuit.
17
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
40
ns
Fall Time
tf
See specified Test Circuit.
22
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=3A
Diode Forward Voltage
VSD
IS=3A, VGS=0V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
600
VDS=10V, ID=1mA
3.5
VDS=10V, ID=1.8A
1.0
V
1.0
mA
±100
nA
5.5
2.0
V
S
2.6
15
Ω
nC
0.98
1.2
V
Package Dimensions
unit : mm (typ)
7528-001
4.7
10.16
3.18
15.8
3.23
15.87
6.68
3.3
2.54
12.98
2.76
1.47 MAX
0.8
1
2
3
0.5
2.54
2.54
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
Switching Time Test Circuit
Avalanche Resistance Test Circuit
VDD=200V
L
ID=1.8A
RL=111Ω
VGS=15V
PW=1μs
D.C.≤1%
P.G
≥50Ω
RG
VOUT
D
2SK2624FS
15V
0V
G
RGS
50Ω
S
50Ω
VDD
2SK2624FS
No. A1320-2/5
2SK2624FS
ID -- VDS
4.0
VDS=10V
4.5
3.5
15V
2.5
V
8V
Tc= --25°C
4.0
3.0
Drain Current, ID -- A
Drain Current, ID -- A
ID -- VGS
5.0
10
2.0
7V
1.5
1.0
3.5
25°C
3.0
2.5
75°C
2.0
1.5
1.0
VGS=6V
0.5
0
0
1
2
3
4
5
6
7
0.5
8
9
Drain-to-Source Voltage, VDS -- V
0
10
3.0
ID=3.0A
1.8A
1.0A
1.5
1.0
0
2
4
6
8
10
12
14
16
18
Gate-to-Source Voltage, VGS -- V
3
2
Tc= --25°C
25°C
1.0
7
75°C
5
3
2
0.1
0.1
2
3
5
7
2
1.0
3
5
Drain Current, ID -- A
IS -- VSD
0
0.3
0.6
0.9
1.2
Diode Forward Voltage, VSD -- V
4.0
1.5
IT01026
20
IT01021
.8A
=1
I
D
,
.8A
0V
=1
=1
I
S
D
,
VG
5V
=1
S
G
V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
--25
0
25
50
75
100
125
150
IT01023
VGS(off) -- Tc
VDS=10V
ID=1mA
5
4
3
2
1
--25
0
25
50
75
100
td(off)
3
tf
td(on)
tr
2
150
VDD=200V
VGS=15V
7
5
125
IT01025
SW Time -- ID
100
Switching Time, SW Time -- ns
5°C
25°
C
--25
°C
0.01
7
5
3
2
0.001
18
4.5
Case Temperature, Tc -- °C
VGS=0V
0.1
7
5
3
2
16
5.0
0
--50
10
IT01024
10
7
5
3
2
1.0
7
5
3
2
14
5.5
6
7
Tc=
7
Source Current, IS -- A
100
7
5
3
2
12
Case Temperature, Tc -- °C
Cutoff Voltage, VGS(off) -- V
Forward Transfer Admittance, | yfs | -- S
5
10
6.0
0
--50
20
VDS=10V
7
8
RDS(on) -- Tc
IT01022
| yfs | -- ID
10
6
6.5
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
3.5
2.0
4
7.0
Tc=25°C
2.5
2
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
4.0
0
IT01020
10
7
5
3
2
1.0
5
7
1.0
2
Drain Current, ID -- A
3
5
IT01027
No. A1320-3/5
2SK2624FS
Ciss, Coss, Crss -- VDS
1000
7
Ciss
2
Drain Current, ID -- A
Ciss, Coss, Crss -- pF
5
3
Coss
Crss
100
7
5
3
2
10
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
1.0
0.5
20
40
60
80
100
120
140
160
IT01031
EAS -- Ta
120
10
10
10
s
0μ
s
μs
m
DC
1.0
7
5
3
2
op
s
10
0m
er
s
on
Operation in
this area is
limited by RDS(on).
0.1
7
5
3
2
ati
Tc=25°C
Single pulse
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
2 3
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.5
0
1m
PD -- Tc
30
Ambient Temperature, Ta -- °C
Avalanche Energy derating factor -- %
30
PW≤10μs
ID=3.5A
IT01028
2.0
0
IDP=12A
10
7
5
3
2
0.01
0.1
PD -- Ta
2.5
ASO
3
2
f=1MHz
5 71000
IT14035
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT01030
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1320-4/5
2SK2624FS
Note on usage : Since the 2SK2624FS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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mentioned above.
This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1320-5/5