SANYO EC4H09C

EC4H09C
Ordering number : ENA1267
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
EC4H09C
UHF to X Band Low-Noise Amplifier
and OSC Applications
Features
•
•
•
•
High cut-off frequency : fT=26GHz typ (VCE=3V).
Low operating voltage.
High gain : ⏐S21e⏐2=16.5dB typ (f=2GHz).
Halogen free compliance (UL94 HB).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to- Base Voltage
VCBO
10
Collector-to-Emitter Voltage
VCEO
3.5
V
Emitter-to-Base Voltage
VEBO
2.5
V
40
mA
120
mW
Junction Temperature
IC
PC
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Collector Current
Collector Dissipation
V
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
Conditions
Ratings
min
typ
VCB=5V, IE=0A
VEB=1V, IC=0A
Gain-Bandwidth Product
hFE
fT
VCE=1V, IC=5mA
VCE=3V, IC=20mA
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
70
20
Unit
max
1
μA
1
μA
150
26
0.12
GHz
pF
Marking : M
Continued on next page.
Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
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80608AB TI IM TC-00001513 No. A1267-1/3
EC4H09C
Continued from preceding page.
Parameter
Symbol
2
⏐S21e⏐ 1
2
⏐S21e⏐ 2
NF
Forward Transfer Gain
Noise Figure
Ratings
Conditions
min
typ
VCE=1V, IC=10mA, f=2GHz
15
VCE=3V, IC=20mA, f=2GHz
13
dB
16.5
VCE=1V, IC=5mA, f=2GHz
Package Dimensions
Unit
max
dB
1.3
1.8
dB
Electrical Connection (Top view)
unit : mm (typ)
7036-002
Polarity mark (Top)
Top View
Emitter
Base
0.8
3
1
2
Emitter
1.0
4
Collector
*Electrodes : Bottom
Polarity mark (Top)
Polarity Discriminating Mark
0.6
Emitter
Collector
Base
Emitter
0.5
0.3
0.2
3
SANYO : ECSP1008-4
Bottom View
IC -- VCE
120μA
12
90μA
9
60μA
6
30μA
3
IB=0μA
0
0
1
2
12
9
6
3
0
3
Collector-to-Emitter Voltage, VCE -- V
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
IT13887
hFE -- IC
3
IC -- VBE
15
150μA
Collector Current, IC -- mA
Collector Current, IC -- mA
15
3V
4
1 : Base
2 : Emitter
3 : Collector
4 : Emitter
VCE=1V
2
0.6
1
1.2
IT13888
Cre -- VCB
3
Reverse Transfer Capacitance, Cre -- pF
f=1MHz
DC Current Gain, hFE
2
VCE=3V
100
1V
7
5
3
1.0
2
3
5
7
10
2
Collector Current, IC -- mA
3
5
7
IT13889
2
0.1
7
5
3
0.1
2
3
5
7
1.0
2
3
5
Collector-to-Base Voltage, VCB -- V
7 10
IT13899
No. A1267-2/3
EC4H09C
⏐S21e⏐2 -- IC
20
f T -- IC
7
f=2GHz
Gain-Bandwidth Product, f T -- GHz
18
V
=3
V CE
16
1V
14
12
10
8
6
1.0
2
3
5
7
2
10
Collector Current, IC -- mA
5
3
=3V
VCE
2
1V
10
7
2
3
5
2.0
1.5
1.0
0.5
10
2
3
5
7
IT13892
PC -- Ta
140
2.5
7
Collector Current, IC -- mA
IT13891
VCE=1V
f=2GHz
ZS=Zsopt
0
1.0
5
5
1.0
7
NF -- IC
3.0
Noise Figure, NF -- dB
3
Collector Dissipation, PC -- mW
2
Forward Transfer Gain, ⏐S21e⏐ -- dB
f=2GHz
120
100
80
60
40
20
0
2
3
5
7
10
Collector Current, IC -- mA
2
3
IT13900
0
25
50
75
100
125
150
Ambient Temperature, Ta -- °C
175
IT13894
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PS No. A1267-3/3