ECH8101 Ordering number : ENA1422 SANYO Semiconductors DATA SHEET ECH8101 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers. Features • • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. High allowable power dissipation. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCES -50 V -50 V VCEO VEBO -50 V -6 V -10 A Collector Current (Pulse) IC ICP -20 A Base Current IB Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current When mounted on ceramic substrate (900mm2×0.8mm) -1 A 1.6 W 150 °C -55 to +150 °C Marking : GA Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network N0409EA TK IM TC-00002126 No. A1422-1/4 ECH8101 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE1 Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ Unit max VCB= -40V, IE=0A VEB= -4V, IC=0A 200 -0.1 μA -0.1 μA hFE2 VCE= -2V, IC= -500mA VCE= -2V, IC= -4A 560 hFE3 VCE= -2V, IC= -10A fT Cob VCE= -10V, IC= -500mA 140 115 VCE(sat)1 VCB= -10V, f=1MHz IC= -6A, IB= -300mA VCE(sat)2 VBE(sat) V(BR)CBO IC= -10μA, IE=0A -50 V V(BR)CES IC= -100μA, RBE=0Ω -50 V V(BR)CEO IC= -1mA, RBE=∞ IE= -10μA, IC=0A -50 V 140 90 MHz pF -100 -170 mV IC= -2A, IB= -40mA -70 -120 mV IC= -2A, IB= -40mA -0.85 -1.2 V V(BR)EBO ton See specified Test Circuit. 80 tstg tf See specified Test Circuit. 137 ns See specified Test Circuit. 23 ns Package Dimensions -6 V ns Electrical Connection unit : mm (typ) 7011A-005 8 7 6 5 1 2 3 4 Top View 0.25 2.9 0.15 8 5 Top view 2.3 4 1 0.65 0.3 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector 0.07 0.9 0.25 2.8 0 t o 0.02 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : ECH8 Bot t om View Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT VOUT IB2 VR 50Ω RB RL + + 100μF 470μF VBE=5V VCC= --25V IC= --50IB1=25IB2= --5A No. A1422-2/4 ECH8101 --6 --5 Collector Current, IC -- A --7 --30mA --25mA --20mA --15mA --4 A m --50 A --60m --3 --10mA A --70m --2 --5mA --8 --6 --4 --25°C --8 0 0m A --9 0m A --8 VCE= --2V Ta=75° C mA A --45m --10 Collector Current, IC -- A --9 IC -- VBE --10 --40mA --35mA 25°C IC -- VCE --10 --2 --1 0 IB=0mA 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Collector-to-Emitter Voltage, VCE -- V hFE -- IC 1000 7 5 25°C 2 --25°C 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Collector Current, IC -- A 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Collector Current, IC -- A IT14445 f T -- IC 5 10 --0.01 2 Cob -- VCB 5 f=1MHz 3 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 2 IT14446 VCE= --10V 2 100 7 5 3 2 3 2 100 7 5 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 7 --10 IT14447 °C 25 °C 75 = Ta 2 C 5° --2 --10 3 25°C Ta= -75°C 25°C 2 --1.0 --0.01 5 7 2 --10 3 VCE(sat) -- IC 5 7 IT14448 IC / IB=20 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --100 3 3 Collector-to-Base Voltage, VCB -- V IC / IB=10 7 5 2 3 2 7 5 3 --1.0 5 VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV IT14444 100 2 3 --1.2 --1.0 VCE= --2V 3 3 2 --0.8 Ta=75°C 5 100 --0.6 hFE -- IC 7 2 10 --0.01 --0.4 Base-to-Emitter Voltage, VBE -- V DC Current Gain, hFE 3 --0.2 1000 Ta=75°C 25°C --25°C 5 0 IT14455 VCE= --0.5V 7 DC Current Gain, hFE 0 --1.8 --2.0 --100 7 °C 25 5 °C 75 C 5° --2 3 = Ta 2 --10 7 5 25°C Ta= -75°C 25°C 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 5 7 --10 2 IT14449 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 5 7 --10 2 IT14450 No. A1422-3/4 ECH8101 VCE(sat) -- IC 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 25 °C --100 7 5 C 5° 7 = Ta 3 C 5° --2 Ta= --25°C 75°C 7 --0.01 2 25°C 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A Forward Bias A S O 5 1m DC 3 2 op er --1.0 7 5 1 10 0m 0m s s ati on s (T a= 25 °C ) 3 2 --0.1 7 5 3 2 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 Ta= --25°C 7 75°C 5 25°C 3 2 3 5 7 --0.1 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V 2 3 5 7 --1.0 2 3 5 7 --10 Collector Current, IC -- A ≤10μs 0μs s 0μ 50 --10 7 5 ICP= --20A IC= --10A --1.0 2 IT14452 PC -- Ta 1.8 10 Collector Current, IC -- A 3 2 2 2 --0.01 5 7 --10 2 IT14451 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 --10 IC / IB=50 IC / IB=50 5 2 VBE(sat) -- IC 3 1.4 1.2 1.0 0.8 0.6 0.4 0.2 5 7 IT14453 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT14454 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2009. Specifications and information herein are subject to change without notice. PS No. A1422-4/4