ECH8309 Ordering number : ENA1418 SANYO Semiconductors DATA SHEET ECH8309 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit --12 V ±10 V Allowable Power Dissipation ID IDP PD 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) --9.5 A --40 A Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Conditions V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V Forward Transfer Admittance VGS(off) | yfs | VDS=--6V, ID=--1mA VDS=--6V, ID=--4.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--4.5A, VGS=--4.5V ID=--2A, VGS=--2.5V ID=--1A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Ratings min typ max --12 V VDS=--12V, VGS=0V VGS=±8V, VDS=0V Marking : JL --0.4 9.6 Unit --10 μA ±10 μA --1.3 16 V S 12 16 mΩ 18 26 mΩ 30 53 mΩ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 22509PE MS IM TC-00001633 No. A1418-1/4 ECH8309 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz Turn-ON Delay Time td(on) See specified Test Circuit. 22 ns Rise Time tr td(off) See specified Test Circuit. 110 ns ns Turn-OFF Delay Time 1780 pF 540 pF 390 pF See specified Test Circuit. 157 See specified Test Circuit. 123 ns Total Gate Charge tf Qg VDS=--6V, VGS=--4.5V, ID=--9.5A 18 nC nC Fall Time Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--9.5A 2.8 Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--9.5A 4.9 Diode Forward Voltage VSD IS=--9.5A, VGS=0V Package Dimensions --0.8 8 7 6 5 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top View 0.25 2.9 0.15 5 2.3 2.8 0 t o 0.02 1 2 3 4 Top view 4 1 0.65 0.3 0.9 0.25 V Electrical Connection unit : mm (typ) 7011A-002 8 nC --1.2 0.07 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bot t om View Switching Time Test Circuit 0V --4.5V VDD= --6V VIN ID= --4.5A RL=1.3Ω VIN D PW=10μs D.C.≤1% VOUT G P.G ECH8309 50Ω S No. A1418-2/4 ECH8309 ID -- VGS --10 --1.8 V VDS= --6V --9 --8 --3 --1.5V --2 --6 --5 --4 --3 --1 VGS= --1.2V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 0 --1.0 0 --0.5 --1.0 --1.5 --2.5 --2.0 Gate-to-Source Voltage, VGS -- V IT13985 RDS(on) -- VGS 50 --0.9 25 °C --2 --1 --25° C --4 --7 Ta=7 5°C Drain Current, ID -- A --5 --4.5 --2.5 V V Drain Current, ID -- A --6 ID -- VDS --8.0V --6.0V --7 IT13986 RDS(on) -- Ta 45 45 ID= --1.0A --2.0A 35 --4.5A 25 20 15 10 5 0 0 --1 --2 --3 --4 --5 --6 --7 5 3 | yfs | -- ID C °C -25 =a T C 75° 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 SW Time -- ID 2 3 10 5 --40 --20 0 20 40 60 80 100 120 140 160 IT14419 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.01 5 7 --10 IT13989 3 td(off) tf 100 7 5 tr 3 --0.4 --0.6 --0.8 --1.0 --1.2 IT13990 f=1MHz 3 Ciss, Coss, Crss -- pF 5 --0.2 Ciss, Coss, Crss -- VDS 5 7 2 0 Diode Forward Voltage, VSD -- V VDD= --6V VGS= --4.5V 1000 Switching Time, SW Time -- ns 15 3 2 Drain Current, ID -- A 2 Ciss 1000 7 Coss Crss 5 3 2 2 10 --0.01 20 --10 7 5 1.0 7 5 0.1 7 --0.01 --2.0A , I D= V 5 . 2 = -VGS .5A I = --4 --4.5V, D = V GS 2 25° 2 25 --1.0A Ambient Temperature, Ta -- °C 2 3 30 IT14418 VDS= --6V 10 7 5 = 8V, I D = --1. VGS 0 --60 --8 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 35 5°C 25°C --25° C 30 40 Ta= 7 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C td(on) 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 2 IT13991 100 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT13992 No. A1418-3/4 ECH8309 VGS -- Qg --100 7 5 3 2 VDS= --6V ID= --9.5A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 2 4 8 6 12 10 14 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.8 16 18 IT14420 --10 7 5 3 2 ASO IDP= --40A ID= --9.5A DC 10 0m s op era tio --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10μs 1m s 10 ms Operation in this area is limited by RDS(on). n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT14421 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14422 Note on usage : Since the ECH8309 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2009. Specifications and information herein are subject to change without notice. PS No. A1418-4/4