SBS817 Ordering number : ENA0734 SANYO Semiconductors DATA SHEET SBS817 Low VF Schottky Barrier Diode 15V, 2.0A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • Small switching noise. Low forward voltage- (IF=2.0A, VF max=0.46V) Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm). Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage VRRM 15 V Nonrepetitive Peak Reverse Surge Voltage VRSM IO 15 V 2.0 A Average Output Current Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1 cycle 20 A --55 to +125 °C --55 to +125 °C Marking : SB *: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3 andTerminal 5 (or 6). Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62508SB TI IM TC-00001462 No. A0734-1/4 SBS817 Electrical Characteristics at Ta=25°C (Value per element) Parameter Symbol Reverse Voltage Forward Voltage VR VF1 IR=1mA IF=1.0A VF2 IF=2.0A VR=7.5V VR=10V, f=1MHz Reverse Current IR Interterminal Capacitance C Reverse Recovery Time trr Thermal Resistance Ratings Conditions min 0.46 V 300 μA pF ns °C / W Electrical Connection 8 7 6 5 1 2 3 4 1 : Anode1 2 : NC 3 : Anode2 4 : Anode2(NC) 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 0.2 0.125 2.1 1.7 0.5 0.39 65 Top view 0.2 4 V 10 5 1 0.39 35 unit : mm (typ) 7045-004 0.2 V 0.33 IF=IR=100mA, See specified Test Circuit. When mounted on ceramic substrate (900mm2✕0.8mm) Rth(j-a) Unit max 15 Package Dimensions 8 typ 2.0 *: Terminal 4 is used for the purposes such as test. Although it is connected to Anode 2, please handle it as NC Terminal 0.05 0.75 1 : Anode1 2 : NC 3 : Anode2 4 : Anode2(NC) 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 SANYO : EMH8 trr Test Circuit 50Ω 100Ω 10Ω 10μs 10mA 100mA 100mA Duty≤10% --5V trr IF -- VF IR -- VR 1.0E+05 Ta=125°C 1.0 7 5 100°C 10 0.01 7 5 25° C 0°C --25 °C 3 2 75° C 50° C 25° C 0.1 7 5 75°C 1.0E+03 0° C 3 2 Reverse Current, IR -- μA 1.0E+04 Ta= 1 Forward Current, IF -- A 3 2 3 2 50°C 1.0E+02 25°C 1.0E+01 0°C 1.0E+00 --25°C 1.0E-01 0.001 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 Forward Voltage, VF -- V 0.40 0.45 0.50 IT12192 0 2 4 6 8 10 12 Reverse Voltage, VR -- V 14 16 IT12193 No. A0734-2/4 Rectangular wave (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.0012 1.0 θ 360° 0.0010 0.8 Sine wave 0.6 180° 360° (2) R Sine wave 0.0006 0.4 (1) 360° θ Rectangular wave V 0.0008 (3) 360° 180° VR (4) 0.0004 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.2 0 0 1.0 0.5 1.5 0.0002 2.0 Average Output Current, IO -- A 2.5 100 Rectangular wave θ 25 (2) (4) (1) 360° 2 4 6 8 10 12 14 Average Reverse Voltage, VR -- V 16 IT12195 C -- VR f=1MHz (5) (3) 75 50 0 5 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC 125 0 IT12194 Ta -- IO 150 Ambient Temperature, Ta -- °C PR(AV) -- VR 0.0014 (3) (2) (4) (1) Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO 1.2 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W SBS817 Sine wave 3 2 100 7 5 3 2 180° 360° 0 0 1.0 0.5 1.5 Average Output Current, IO -- A IT13212 10 0.1 2 3 5 7 1.0 2 3 5 Reverse Voltage, VR -- V 7 10 2 3 IT13213 IFSM -- t 24 Surge Forward Current, IFSM(Peak) -- A 2.5 2.0 Current waveform 50Hz sine wave 20 IS 20ms t 16 12 8 4 0 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 IT13214 No. A0734-3/4 SBS817 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice. PS No. A0734-4/4