FW377 Ordering number : ENA0977 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW377 General-Purpose Switching Device Applications Features • • • For motor drivers, inverters. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions VDSS VGSS N-channel P-channel Unit 35 --35 V ±20 ±20 V ID ID 6 --5 A Drain Current (PW≤10s) duty cycle≤1% 7 --6 A Drain Current (PW≤100ms) ID duty cycle≤1% 10 --10 A IDP duty cycle≤1% 24 --20 A Drain Current (PW≤10µs) Allowable Power Dissipation PD Total Dissipation PT Mounted on a ceramic board (1500mm2✕0.8mm)1unit, PW≤10s Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s 1.8 W 2.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Marking : W377 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2107PA TI IM TC-00001038 No. A0977-1/6 FW377 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current ID=1mA, VGS=0V VDS=35V, VGS=0V VGS(off) ⏐yfs⏐ VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A RDS(on)1 RDS(on)2 ID=6A, VGS=10V ID=3A, VGS=4V Input Capacitance Ciss Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance 35 V 1.2 4.6 1 µA ±10 µA 2.6 7.8 V S 25 33 mΩ 43 61 mΩ 1050 pF 150 pF Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 13 ns See specified Test Circuit. 43 ns td(off) tf See specified Test Circuit. 76 ns Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. 48 ns VDS=20V, VGS=10V, ID=6A VDS=20V, VGS=10V, ID=6A 20 nC 3.3 nC VDS=20V, VGS=10V, ID=6A IS=6A, VGS=0V 4.5 0.84 nC 1.2 V --1 µA ±10 µA --2.6 V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current ID=--1mA, VGS=0V VDS=--35V, VGS=0V VGS(off) ⏐yfs⏐ VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--5A RDS(on)1 RDS(on)2 ID=--5A, VGS=--10V ID=--3A, VGS=--4V Input Capacitance Ciss Output Capacitance Coss VDS=--20V, f=1MHz VDS=--20V, f=1MHz Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs --35 V --1.2 4.5 7.5 S 37 49 mΩ 62 87 mΩ 1200 pF 190 pF VDS=--20V, f=1MHz See specified Test Circuit. 140 pF 13 ns See specified Test Circuit. 47 ns See specified Test Circuit. 101 ns See specified Test Circuit. 69 ns 24 nC 3.7 nC Gate-to-Drain “Miller” Charge Qgd VDS=--20V, VGS=--10V, ID=--5A VDS=--20V, VGS=--10V, ID=--5A VDS=--20V, VGS=--10V, ID=--5A Diode Forward Voltage VSD IS=--5A, VGS=0V Package Dimensions 5.4 --0.85 nC --1.5 V Electrical Connection unit : mm (typ) 7005-003 8 7 6 5 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 4 1.27 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view 0.1 5.0 1.5 1.8 MAX 0.43 0.595 6.0 4.4 0.3 8 SANYO : SOP8 No. A0977-2/6 FW377 Switching Time Test Circuit [N-channel] [P-channel] VDD=20V VIN 10V 0V VDD= --20V VIN 0V --10V ID=6A RL=3.3Ω VIN D ID= --5A RL=4Ω VIN D VOUT PW=10µs D.C.≤1% VOUT PW=10µs D.C.≤1% G G FW377 P.G 50Ω ID -- VDS 9 2.0 1.5 7 6 5 4 3 2 1.0 VGS=2.5V 1 0 0 0.5 0.6 0.7 0.8 0.9 70 ID=3A 6A 50 40 30 20 10 0 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V C 5° 2 1.0 7 5 3 [Nch] 40 6A , I D= =10V VGS 30 20 10 --40 --20 0 20 40 60 80 100 120 IS -- VSD 140 160 IT13054 [Nch] VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 0.1 0.01 4.0 IT13052 3A I = 4V, D = VGS 50 10 7 5 C 5° --2 °C 75 3.5 RDS(on) -- Ta [Nch] Source Current, IS -- A = Ta 3.0 Ambient Temperature, Ta -- °C 5 2 2.5 60 0 --60 16 VDS=10V 3 2.0 70 IT13053 ⏐yfs⏐ -- ID 10 1.5 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ [Nch] 80 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 60 0.5 IT13051 RDS(on) -- VGS 90 0 1.0 --25°C 0.4 25°C 0.3 °C 0.2 Ta=7 5 0.1 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, ⏐yfs⏐ -- S --25 0.5 25°C 2.5 8 °C 3V 3.0 0 [Nch] Ta= 75°C 3.5 7 ID -- VGS 10 Drain Current, ID -- A 4.0 S VDS=10V 11 10 V 4.5 50Ω 12 6V 5.0 [Nch] 3.5 V 5.5 4V 16V 6.0 Drain Current, ID -- A FW377 P.G S 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT13055 0.01 0.2 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 1.2 IT13056 No. A0977-3/6 FW377 SW Time -- ID 5 [Nch] 2 2 Ciss 100 td(off) 7 5 tr 3 2 tf td(on) 1000 5 3 2 Coss Crss 7 5 3 5 7 2 1.0 3 5 VGS -- Qg 10 7 0 10 IT13057 10 7 5 Drain Current, ID -- A 7 6 5 4 3 --3.5 ID -- VDS [Pch] s tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (1500mm2✕0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V --3V 5 7 IT13060 ID -- VGS --10 .5 V 10 op era 0.1 7 5 [Pch] VDS= --10V --9 --8 Drain Current, ID -- A --4.0 [Nch] PW≤10µs 10 0 1m µs s 10 m s 10 0m s DC 0.01 0.01 25 IT13059 --3 --4.5 20 Total Gate Charge, Qg -- nC --4V --10V --6V --16V --5.0 15 35 ASO ID=6A 3 2 3 2 30 IT13058 1.0 7 5 1 10 25 3 2 2 0 20 IDP=24A 3 2 5 15 5 8 0 10 Drain-to-Source Voltage, VDS -- V [Nch] VDS=20V ID=6A 9 5 --3.0 --2.5 --2.0 V V GS= --2.5 --1.5 --7 --6 --5 --4 --3 --1.0 --2 --0.5 --1 0 Ta=7 5°C -25°C 25 ° C 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 100 10 7 5 0.1 Drain Current, ID -- A [Nch] f=1MHz Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 3 Ciss, Coss, Crss -- VDS 3 VDD=20V VGS=10V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 140 --0.9 0 --1.0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V IT13061 [Pch] RDS(on) -- Ta 120 --4.0 IT13062 [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 120 100 ID= --3A --5A 80 60 40 20 0 0 --2 --4 --6 --8 --10 --12 Gate-to-Source Voltage, VGS -- V --14 --16 IT13063 100 3A 80 = -, ID --4V 60 = VGS 40 = --10 VGS = --5A V, I D 20 0 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13064 No. A0977-4/6 FW377 [Pch] 5 C 5° 2 1.0 7 5 3 3 2 --0.1 7 5 3 2 2 3 5 7 2 --0.1 3 5 7 2 --1.0 3 --10 IT13065 SW Time -- ID 5 --0.01 --0.2 5 7 Drain Current, ID -- A --0.6 --0.8 --1.0 --1.2 IT13066 Ciss, Coss, Crss -- VDS [Pch] 3 [Pch] f=1MHz 2 Ciss 2 7 tf 5 3 tr 2 1000 Ciss, Coss, Crss -- pF td(off) 100 7 5 3 Coss 2 td(on) Crss 10 100 7 7 5 --0.1 5 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A VGS -- Qg --10 0 7 --10 IT13067 Drain Current, ID -- A --6 --5 --4 --3 --2 0 15 20 Total Gate Charge, Qg -- nC PD -- Ta --10 7 5 2.4 [Nch, Pch] 2.2 2.0 1.8 To t 1.6 al 1.4 1.2 di ss 1u ati on nit 1.0 ip 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13071 --30 --35 IT13068 PW≤10µs 10 10 0µ s 1m s m 10 3 2 s 0m s --1.0 7 5 DC 10s op er ati o 3 2 n Operation in this area is limited by RDS(on). --0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (1500mm2✕0.8mm) 1unit 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5 7 IT13070 Drain-to-Source Voltage, VDS -- V PD(FET1) -- PD(FET2) [Nch, Pch] IT13069 Mounted on a ceramic board (1500mm2✕0.8mm) PW≤10s --25 [Pch] ID= --5A --0.01 --0.01 2 3 Allowable Power Dissipation, PD (FET1) -- W 2.6 25 --20 IDP= --20A 3 2 --1 10 --15 ASO 5 3 2 --7 5 --10 [Pch] --8 0 --5 Drain-to-Source Voltage, VDS -- V VDS= --20V ID= --5A --9 Allowable Power Dissipation, PD -- W --0.4 Diode Forward Voltage, VSD -- V VDD= --20V VGS= --10V 3 Switching Time, SW Time -- ns --1.0 7 5 2 0.1 --0.01 Gate-to-Source Voltage, VGS -- V 3 2 25°C --25°C C 5° --2 = Ta °C 75 2 [Pch] VGS=0V °C 3 IS -- VSD --10 7 5 Ta=7 5 7 ⏐yfs⏐ -- ID VDS= --10V Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 10 2.0 Mounted on a ceramic board (1500mm2✕0.8mm) PW≤10s 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Allowable Power Dissipation, PD (FET2) -- W 1.8 2.0 IT13072 No. A0977-5/6 FW377 Note on usage : Since the FW377 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2007. Specifications and information herein are subject to change without notice. PS No. A0977-6/6