SANYO LA0225CS

Ordering number : ENA1001A
PN type Photo Diode
LA0225CS
For Optical Disk
Blue-purple Laser Diode monitors
Overview
LA0225CS is a photo diode for optical disk blue-purple laser diode monitors.
Functions
• The blue-purple sensitive PN type photo diode
• Photo diode opening size: 1.0mm
• High sensitivity and light stability by the AR coating cover glass adoption.
• Small size and thin type CSP Package: ODCSP4, size: 1.22mm×1.38mm×0.6mm
• Pb free, capable of reflow mounting
Specifications
Maximum Ratings at Ta = 25°C
Parameter
Reverse voltage
Symbol
VR
Conditions
Ratings
Unit
10
V
Operating temperature
Topr
-30 to +85
°C
Storage temperature
Tstg
-40 to +85
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
52108 20080417-S00014 / 30508 MS PC No.A1001-1/4
LA0225CS
Electrical and Optical Characteristics at Ta = 25°C, VCC = 5V
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Dark current
ID
VR = 10V
Receiving sensitivity *
GB
λ = 405nm
0.22
0.28
0.01
A/W
GD
λ = 650nm
0.34
0.44
A/W
GC
λ = 780nm
0.33
0.43
A/W
Forward voltage
VF
IF = 0.1mA
410
510
Inter-terminal capacitance *
C
VR = 2.5V
65
2
610
nA
mV
pF
* Design reference value (indication of deviation), the characteristic is not guaranteed.
Package Dimensions
Block Diagram
unit: mm (typ)
3345
TOP VIEW
SIDE VIEW
BOTTOM VIEW
4
3
1
2
1.38
3
4
2
1
0.58
3
0.3
1.22
4
2
Top view
0.58
0.67 MAX
1
0.1
(0.5)
SIDE VIEW
Pin No.
Pin name
Function
1,2
cathode
cathode pin
3,4
anode
anode pin
SANYO : ODCSP4(1.22X1.38)
Receiving Layout
Package center and photo diode opening center is same.
PD opening
1.0mm
1.22mm
1.38mm
Top view
No.A1001-2/4
LA0225CS
VG – f
4
2
2
0
0
fc = 14.7MHz
–2
Voltage gain, VG – dB
Voltage gain, VG – dB
VG – f
4
–4
–6
–8
– 10
Pi = 60µW
50Ω
λ = 405nm
VR = 2.5V
– 12
– 14
– 16
100k
2 3
–4
–6
–8
– 10
– 12
– 14
– 16
5
7 1M
2 3
5 7 10M
2 3
5
7 100M
fc = 19.4MHz
–2
Pi = 60µW
50Ω
λ = 405nm
VR = 5V
100k
2
3
5 7 1M
Frequency, f –Hz
ID – Ta
10000
2
3
5 7 10M
2
3
5 7 100M
Frequency, f –Hz
ID – VR
5
VR = 2.5V
Ta = 27°C
4.5
4
Dark current, ID – pA
Dark current, ID – pA
1000
100
10
3.5
3
2.5
2
1.5
1
1
0.5
0.1
– 40
– 20
0
20
40
60
80
100
0
2
Ambient temperature, Ta – °C
C – VR
8
10
0.45
120
100
80
60
40
20
0.40
0.35
0.30
0.25
0.20
0.15
0
0
2
4
6
8
10
12
G – λ
0.32
0.10
300
400
500
600
700
800
900
1000
1100
Wavelength, λ – nm
Reverse voltage, VR – V
Receiving sensitivity, G – A/W
6
G – λ
0.50
Receiving sensitivity, G – A/W
Interterminal capacitance, C – pF
140
4
Reverse voltage, VR – V
0.30
0.28
0.26
0.24
0.22
0.20
380
390
400
410
420
430
440
450
Wavelength, λ – nm
No.A1001-3/4
LA0225CS
VF – IF
1.4
4.0
Forward current, IF – µA
1.2
Forward current, IF – mA
VF – IF
4.5
1.0
0.8
0.6
0.4
0.2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
– 0.2
0
0.1
0.2
0.3
0.4
0.5
Forward voltage, VF – V
0.6
0.7
– 0.5
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
Forward voltage, VF – V
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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above.
This catalog provides information as of May, 2008. Specifications and information herein are subject
to change without notice.
PS No.A1001-4/4