PCP1201 Ordering number : ENA1164 SANYO Semiconductors DATA SHEET PCP1201 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol Conditions Ratings Unit VCBO VCES 150 V 150 V VCEO VEBO 120 V 7 V IC 2.5 A ICP Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 4 A 500 mA When mounted on ceramic substrate (450mm2✕0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Marking : QH Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73008EA TI IM TC-00001468 No. A1164-1/4 PCP1201 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current ICBO IEBO VCB=100V, IE=0A VEB=5V, IC=0A DC Current Gain hFE Gain-Bandwidth Product fT Cob VCE=5V, IC=100mA VCE=10V, IC=100mA Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton Storage Time Fall Time min typ Unit max 200 1 μA 1 μA 560 130 VCB=10V, f=1MHz IC=1A, IB=100mA VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions MHz 13 IC=1A, IB=100mA IC=10μA, IE=0A IC=100μA, RBE=0Ω IC=1mA, RBE=∞ IE=10μA, IC=0A pF 100 150 0.85 1.2 mV V 150 V 150 V 120 V 7 V See specified Test Circuit. 50 ns tstg See specified Test Circuit. 1250 ns tf See specified Test Circuit. 60 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7008A-003 IB1 PW=20μs D.C.≤1% Top View 4.5 INPUT 1.6 1.5 OUTPUT IB2 VR RB RL + 470μF + 100μF 4.0 1.0 2.5 50Ω VBE= --5V 1 2 VCC=60V 3 0.4 IC=10IB1= --10IB2=0.5A 0.4 0.5 1.5 3.0 0.75 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Bottom View IC -- VCE 120mA 100mA 80mA 60mA mA 1.5 120mA Collector Current, IC -- A 200 mA 250 2.0 mA 160 40mA 20mA 1.0 10mA 5mA 0.5 0 0.1 0.2 0.3 0.4 Collector-to-Emitter Voltage, VCE -- V 100mA 80mA 60mA 2.0 40mA mA 160 1.5 20mA mA 200 10mA 5mA 1.0 2mA 0.5 IB=0mA 0 IC -- VCE 2.5 500 Collector Current, IC -- A mA 2.5 1mA IB=0mA 0 0.5 IT13533 0 1 2 3 4 Collector-to-Emitter Voltage, VCE -- V 5 IT13534 No. A1164-2/4 PCP1201 IC -- VBE 3.0 VCE=5V 7 3 Ta=75°C 25°C 2 --25°C 5 DC Current Gain, hFE 2.5 2.0 1.5 5°C 25°C --25°C 1.0 0.5 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 5 10 0.01 1.2 2 3 5 7 0.1 2 3 5 7 1.0 Cob -- VCB 7 f=1MHz 2 Output Capacitance, Cob -- pF Gain-Bandwidth Product, fT -- MHz 5 5 100 7 5 3 2 0.01 2 3 5 7 2 0.1 3 5 Collector Current, IC -- A 3 2 10 7 5 3 0.1 7 1.0 IT13537 2 3 5 7 1.0 2 3 5 7 10 2 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 0.1 7 5 °C 25 °C Ta=75 2 --25°C 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A IC=2.5A 1.0 7 5 3 2 0.1 7 5 3 2 Tc=25°C Single pulse 0.01 0.01 2 3 5 7 0.1 1.0 Ta= --25°C 7 75°C 5 25°C 3 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A IT13539 ASO 2 3 5 IT13540 PC -- Ta 1.6 <10μs ICP=4A 2 2 0.01 5 When mounted on ceramic substrate (450mm2✕0.8mm) 1.4 Collector Dissipation, PC -- W 2 3 s 500μ μs 100 m) .8m s C) 2 ✕0 1m 5° 2 mm ms = c 10 s 450 T C) e ( 0m n( 5° trat 10 tio =2 ubs era Ta ic s op n ( ram tio n ce DC era d o op ounte DC en m Wh 7 5 3.5 3 2 5 7 100 IT13538 VBE(sat) -- IC 3 IC / IB=10 3 3 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 IT13536 VCE=10V Collector Current, IC -- A 2 Collector Current, IC -- A IT13535 fT -- IC 3 7 2 0 0 100 3 Ta= 7 Collector Current, IC -- A hFE -- IC 1000 VCE=5V 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, 2 3 5 7100 2 3 VCE -- V IT13541 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13519 No. A1164-3/4 PCP1201 PC -- Tc 4.0 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT13520 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No. A1164-4/4