SANYO RE0208M

RE0208M
Ordering number : ENA1640
SANYO Semiconductors
DATA SHEET
RE0208M
Fast Recovery Diode for Flash Circuit
800V, 200mA Rectifier
Applications
•
Voltage rectification for flash circuit etc.
Features
•
•
•
•
High voltage (VRRM=800V).
Reverse recovery time is fast.
Ultrasmall-size package permitting applied sets to be small and slim.
Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Symbol
Conditions
Ratings
VRRM
VRSM
Unit
800
DC.When mounted on ceramic substrate
V
800
V
0.2
A
Surge Forward Current
IO
IFSM
1
A
Junction Temperature
Tj
--55 to +150
°C
Storage Temperature
Tstg
--55 to +150
°C
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VR
VF1
Conditions
IR=1mA
VF2
IF=10mA
IF=100mA
IR1
VR=400V
IR2
VR=800V
Marking : 2B
Ratings
min
typ
Unit
max
800
V
1.3
1.6
3.2
4.0
V
V
3
μA
50
μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
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applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
11310SC TK IM TC-00002241 No. A1640-1/3
RE0208M
Continued from preceding page.
Parameter
Symbol
Reverse Recovery Time
trr
Rth(j-c)
Thermal Resistance
min
typ
IF=IR=100mA, See specified Test Circuit.
When mounted on ceramic substrate (40mm×50mm×0.8mm)
Package Dimensions
Unit
max
33
55
120
ns
°C / W
trr Test Circuit
unit : mm (typ)
7019A-001
0.25
100Ω
10μs
--5V
1.6
0 t o 0.02
1
0.25
10Ω
10mA
50Ω
0.15
2.0
100mA 100mA
Duty≤10%
3
2.1
Ratings
Conditions
trr
2
0.65
0.85
0.3
0.07
1 : Anode
2 : No Contact
3 : Cathode
SANYO : MCPH3
IF -- VF
7
5
f=1MHz
7
5
--2
0.1
7
5
°C
0°
0°C
3
°C 2
°C 50
5
7
12
5°
C
10
0.01
7
5
0°
C
2
C
C
5°
Ta=
15
Forward Current, IF -- A
2
Interterminal Capacitance, C -- pF
3
3
2
0.001
C -- VR
10
0
1
2
3
4
5
Forward Voltage, VF -- V
6
7
IT14171
5
3
2
1.0
7
5
3
0.1
2
3
5 7 1.0
2
3
5 7 10
Reverse Voltage, VR -- V
2
3
5 7 100
IT14172
No. A1640-2/3
RE0208M
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of January, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1640-3/3